• KIEE International Transactions on Electrophysics and Applications
• /
• v.2C no.5
• /
• pp.258-261
• /
• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• Progress in Superconductivity
• /
• v.3 no.2
• /
• pp.146-150
• /
• 2002

We performed the point contact spectroscopy on newly discovered superconductor $MgB_2$ thin films with Au tip. In the point contact spectroscopy of the metallic Sharvin limit, the differential conductance below the gap is twice as that above the gap by virtue of Andreev Reflection. After some surface cleaning processes of sample preparation such as ion-milling and wet etching, the obtained dI/dV versus voltage curves are relatively well fitted to the Blonder-Tinkham-Klapwijk (BTK) formalism. Gaps determined by this technique were distributed in the range of 3meV~ 8meV with the BCS value of 5.9meV in the weak coupling limit. We attribute these discrepancies to the symmetry of the gap parameter and the degradation of the surface of the sample. We also present the temperature dependence of the conductance vs voltage curve and thereby the temperature dependence of the gap.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.91-92
• /
• 2006

The electrical properties of viologen derivatives were studied in terms of the tunneling current characteristics on the length of the viologen derivatives using self-assembling techniques and ultra high vacuum scanning tunneling microscopy (UHV-STM). We fabricated the Au substrate were deposited by thermal evaporation system ($420^{\circ}C$. Self-assembled monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto freshly cleaved, heated mica. The Au substrate was exposed to a 1 mM solution of viologen derivatives in ethanol for 24 hours to form a monolayer. We measurement of the morphology on the single viologen molecules ($VC_{8}SH$, $VC_{10}SH$, $HSC_{8}VC_{8}SH$, and $HSC_{10}VC_{10}SH$). The current-voltage (I-V) and differential conductance (dl/dV-V) properties were measured while the electrical properties of the formed monolayer were scanned by using a STS. The effective barrier height of viologen derivatives ($VC_{8}SH$, $VC_{10}SH$, $HSC_{8}VC_{8}SH$, and $HSC_{10}VC_{10}SH$) were calculated to be 1.076 eV, 1.56 ${\pm}$ 0.3 eV, 1.85 eV, 2.28 eV, respectively.