• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.33-33
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• 2007

In PDP industry, the dielectrics and barrier ribs have been required with low dielectric constant, low melting point and Pb-free composition due to the low power consumption, low signal delay time and the environment restriction. We were studied with $B_2O_3-Al_2O_3$-SrO glass systems about optical, thermal and dielectric properties. The glass forming region of the $B_2O_3-Al_2O_3$-SrO glass systems was narrow due to the amount of the glass former $(B_2O_3)$. The glass transition temperature (Tg) of the glasses was at $550{\sim}590^{\circ}C$. The glasses have 6~8 for the dielectric constant. Furthermore, the transmittance of the glasses was over 80% on the range of the visible ray. From the results, the glasses of the $B_2O_3-Al_2O_3$-SrO glass systems should enable to be a good candidate of the PDP devices for information display with low dielectric constant. The aim of this study is to give a fundamental result of new glass system for low dielectric constant in the information display.

• 한국재료학회지
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• 제34권1호
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• pp.34-43
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• 2024

New piezoelectric and triboelectric materials for energy harvesting are being widely researched to reduce their processing cost and complexity and to improve their energy conversion efficiency. In this study, BaTiO₃ films of various thickness were deposited on Ni foams by R.F. magnetron sputtering to study the piezoelectric and triboelectric properties of the porous spongy structure materials. Then piezoelectric nanogenerators (PENGs) were prepared with spongy structured BaTiO₃ and PDMS composite. The output performance exhibited a positive dependence on the thickness of the BaTiO₃ film, pushing load, and poling. The PENG output voltage and current were 4.4 V and 0.453 ㎂ at an applied stress of 120 N when poled with a 300 kV/cm electric field. The electrical properties of the fabricated PENG were stable even after 5,000 cycles of durability testing. The triboelectric nanogenerators (TENGs) were fabricated using spongy structured BaTiO₃ and various polymer films as dielectrics and operated in a vertical contact separation mode. The maximum peak to peak voltage and current of the composite film-based triboelectric nanogenerator were 63.2 V and 6 ㎂, respectively. This study offers new insights into the design and fabrication of high output nanogenerators using spongy structured materials.

• 한국재료학회지
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• 제34권6호
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• 한국세라믹학회지
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• 제40권1호
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• pp.81-86
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• 2003

고상합성한 $CaTiO_3$와 $YAlO_3$의 혼합분말을 소결하여 조성에 따른 미세조직과 고주파 유전특성의 변화를 조사하였다. $CaTiO_3-YAlO_3$ 고용체의 고주파 유전특성은 조성에 민감하게 의존하였다. 최적의 유전특성은 $0.75CaTiO_3-0.25YAlO_3$를 $1500^{\circ}C$에서 3시간 소결하였을 때 유전율 47, 품질계수 35000. 공진주파수의 온도계수 +11 ppm/$^{\circ}C$이었다. 동일 조성을 저온에서 치밀화 시키기 위하여 $CaB_2O_4$를 첨가하였을때 $1200^{\circ}C$ 이상에서 완전 치밀화 되었으며. $1300^{\circ}C$에서 3시간 소결하였을 경우, 유전율 47, 품질계수 37000, 공진주파수의 온도계수 +17ppm/$^{\circ}C$로 유전특성의 저하 없이 저온에서 치밀한 소결체를 얻을 수 있었다. $CaB_2O_4$를 소결조제로 한 $CaTiO_3-YAlO_3$계 소결체는 5~7GHz에서 중간유전율과 높은 품질계수를 갖는 고주파용 유전재료로 활용이 기대된다.

• 전자공학회논문지SC
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• 제42권1호
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• pp.39-45
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• 2005

본 논문은 밀리미터파를 이용한 무혈혈당측정기 개발의 기초연구로서, 높은 유전손실을 지닌 유전체의 반사 유전특성 측정법을 제시하고, 이에 의해 10～90 GHz의 밀리미터파 대역에서 글루코오스 농도에 따른 글루코오스 수용액 및 글루코오스 -0.9% NaCl 용액의 유전특성 변화를 조사하였다. 제시된 측정법은 측정 유전제의 앞단에 평행평면판을 배치하여 측정 주파수대역 내에서 전력반사계수가 최소가 되는 최소반사조건이 형성되도록 하고, 이 조건에서 측정된 최소 전력반사계수와 주파수로부터 측정 유전체의 유전특성을 결정할 수 있는 방법이다. 순수의 유전특성에 대한 측정 결과들은 제시된 측정법의 타당성을 입증하였다. 또한 10～90 GHz 대역에서 글루코오스 농도 변화에 따른 글루코오스 용액 및 글루코오스 -0.9% NaCl 용액들의 유전특성 변화에 대한 실험을 통해, 타 대역에 비해 30～45 GHz 범위에서 글루코오스 농도 변화에 의한 각 용액들의 유전특성의 변화가 최대임을 알 수 있었다. 이를 통해 본 측정법에서 전력반사계수와 주파수의 측정 정밀도가 각각 ±0.1 dB와 ±0.01 GHz일 경우, 대략 3 mole/L 정도의 분해능으로 용액 내 글루코오스 농도 변화를 측정할 수 있음을 보였다.

• 마이크로전자및패키징학회지
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• 제10권1호
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• pp.51-56
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• 2003

GPS 안테나 제작을 위하여 $MgTiO_3-CaTiO_3$계 세라믹 유전체의 고주파 유전 특성을 연구하였다. (1-X) $MgTiO_3-X CaTiO_3$계 세라믹에서 X=7mol%이고 소성 온도 $1400^{\circ}C$일 때 유전율 20.6, 품질계수 52,500, 공진주파수 온도계수 -1.5[ppm/$^{\circ}C$]의 유전 특성을 얻었다. X=0.7 mol% 조성에 $P_2O_5$를 0.6wt% 첨가한 결과 소성온도 $1250^{\circ}C$에서 유전율 21, 품질계수 58,000, 공진주파수 온도 계수 2.6 [ppm/$^{\circ}C$]의 고주파 유전 특성을 얻었다. 상기 조성을 이용하여 세라믹 두께 6[mm], 정사각형의 패치 길이 20.5[mm]인 GPS 안테나를 설계 제작하였다. GPS 안테나 제작 결과 중심주파수 1579(MHz), 반사손실-11(dB), 대역폭 22 [MHz]로 설계 결과와 유사함을 볼 수 있었다.

• 한국세라믹학회지
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• 제45권11호
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• pp.701-706
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• 2008

High frequency dielectric ceramics have potential for applications in mobile and satellite communications systems at frequencies higher than 10GHz. The Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics are known to have a high quality factor, a small temperature coefficient of the resonance frequency and a high dielectric constant. On the other hands, sintering at high temperature for extended time is required to obtain the ordered structure for high quality factor. In this study, the microwave dielectric properties of $ZrO_2$ and NiO-added Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid-state reaction have been investigated. Adding $ZrO_2$ and NiO could effectively promote the densification even the case of decreasing the sintering time. At the surface of samples, secondary phase of Ba-Ta compounds was formed possibly due to the evaporation of ZnO, however, the interior of the samples remained as pure Ba$(Zn_{1/3}Ta_{2/3})O_3$. The samples sintered at $1600^{\circ}C$ for 2h exhibited 1:2 ordering of Zn and Ta cations. Excellent microwave dielectric properties of $Q{\cdot}f$(>96,000 GHz) and ${\varepsilon}_r$=30 has been obtained.

• 한국진공학회지
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• 제9권3호
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• pp.227-232
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• 2000

광소자와 마이크로파 유전체 소자 및 절연 산화막으로의 응용을 위한 $MgTiO_3$ 박막을 펄스레이저 증착법을 이용하여 다양한 기판 위에서 증착하였다. 사파이어 기판에(c-plane Sapphire) 성장된 $MgTiO_3$ 박막은 에피텍셜 성장(epitaxial growth)이 되었으며, $SiO_2$/Si 및 Pt/Ti/$SiO_2$/Si(plantinzed silicon)기판 위에 성장된 $MgTiO_3$ 박막의 경우, 기판과 관계없이 c축 방향으로 배향(oriented)되었다. 사파이어 기판 위에 증착된 $MgTiO_3$ 박막은 가시영역에서 투명하였으며, 약 290 nm 파장을 갖는 영역에서 급격한 흡수단을 보였다. 사파이어 기판 위에 성장된 박막의 AM(Atomic Force Microscopy)분석결과 약 0.87 nm rms roughness 값을 갖는 매우 평탄한 표면상태를 갖고 있음을 확인하였다. MIM(Pt/$MgTiO_3$/Pt) 구조의 캐패시터를 형성시켜 $MgTiO_3$박막의 유전특성 (dielectric properties)을 관찰하였는데, 펄스레이저 증착법으로 성장된 $MgTiO_3$ 박막의 유전율(relative dielectric constant)은 약 24.5였으며, 1 MHz에서 약 1.5%의 유전손실(dielectric loss) 값을 보였다. 또한 이때 $MgTiO_3$박막은 낮은 유전분산을 보였다.