• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.33-33
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• 2007

In PDP industry, the dielectrics and barrier ribs have been required with low dielectric constant, low melting point and Pb-free composition due to the low power consumption, low signal delay time and the environment restriction. We were studied with $B_2O_3-Al_2O_3$-SrO glass systems about optical, thermal and dielectric properties. The glass forming region of the $B_2O_3-Al_2O_3$-SrO glass systems was narrow due to the amount of the glass former $(B_2O_3)$. The glass transition temperature (Tg) of the glasses was at $550{\sim}590^{\circ}C$. The glasses have 6~8 for the dielectric constant. Furthermore, the transmittance of the glasses was over 80% on the range of the visible ray. From the results, the glasses of the $B_2O_3-Al_2O_3$-SrO glass systems should enable to be a good candidate of the PDP devices for information display with low dielectric constant. The aim of this study is to give a fundamental result of new glass system for low dielectric constant in the information display.

• Korean Journal of Materials Research
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• v.34 no.1
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• pp.34-43
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• 2024

New piezoelectric and triboelectric materials for energy harvesting are being widely researched to reduce their processing cost and complexity and to improve their energy conversion efficiency. In this study, BaTiO₃ films of various thickness were deposited on Ni foams by R.F. magnetron sputtering to study the piezoelectric and triboelectric properties of the porous spongy structure materials. Then piezoelectric nanogenerators (PENGs) were prepared with spongy structured BaTiO₃ and PDMS composite. The output performance exhibited a positive dependence on the thickness of the BaTiO₃ film, pushing load, and poling. The PENG output voltage and current were 4.4 V and 0.453 ㎂ at an applied stress of 120 N when poled with a 300 kV/cm electric field. The electrical properties of the fabricated PENG were stable even after 5,000 cycles of durability testing. The triboelectric nanogenerators (TENGs) were fabricated using spongy structured BaTiO₃ and various polymer films as dielectrics and operated in a vertical contact separation mode. The maximum peak to peak voltage and current of the composite film-based triboelectric nanogenerator were 63.2 V and 6 ㎂, respectively. This study offers new insights into the design and fabrication of high output nanogenerators using spongy structured materials.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.81-86
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• 2003

Microwave dielectric properties have been investigated in the$(1-x)CaTiO_3-xYAlO_3$ (x=0.1~1.0) solid solution system. The mixtures of $CaTiO_3$ and $YalO_3$using solid state method were sintered at various temperatures. Their dielectric constants and related temperature coefficients were strongly depend on the composition of the solid solution. The optimum properties were recorded as for ${\varepsilon}_r=47,$ $Q{\times}f_0$=35000 and ${\tau}_f=+11ppm/^{\circ}C$ without sintering agent. Even at $1200^{\circ}C$ full densification has been achieved with addition of $CaB_2O_4$ in the $0.75CaTiO_3-0.25YalO_3$ composition. The sample of $0.3 wt%-CaB_2O_4$ added $ 0.75CaTiO_3-0.25YalO_3$ sintered at $1300^{\circ}C$ for 3 h showed optimum microwave dielectric properties of ${\varepsilon}_r=47$, $Q{\time}f_0=37000$ and ${\tau}_f=+17ppm/^{\circ}C$, which demonstrates the promising candidates for microwave dielectric materials covering 5~7 GHz range.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.42 no.1
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• pp.39-45
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• 2005

As a basic research for the development of a non-invasive blood glucose sensor using millimeter waves, we have presented a method for measuring the dielectric properties of high loss dielectrics, based on the reflection method, and investigated the variation of the dielectric properties of glucose-water and glucose -0.9% NaCl solutions in the 10～90 GHz range. In the proposed method, a minimal reflection condition is formed by placing a specially-chosen low-loss plane-parallel plate in front of a high-loss medium under test at a given frequency range. Using the minimal power reflection coefficient and the corresponding frequency at this condition, tile dielectric properties of the medium can be determined. The measured results on pure water have shown the adequacy of the proposed method. The measured results on glucose-water and glucose -0.9% NaCl solutions in the 10～90 GHz range showed that the variations of the dielectric properties of glucose solutions according to the change of their glucose concentration were maximum in the 30～45 GHz range. From these facts we concluded that the variation of about 3 mole/L in the glucose solutions must be distinguished With the measurement accuracies of ±0.1 dB and ±0.01 GHz.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.51-56
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• 2003

Microwave dielectric properties of the $MgTiO_3-CaTiO_3$ ceramics were investigated for GPS antenna fabrication. (1-X) $MgTiO_3-X CaTiO_3$ ceramics with X=7 mol% sintered at $1400^{\circ}C$ exhibited can be dielectric constant of 20.6, the quality factor of 52,500 and the temperature coefficient of resonant frequency of -1.5 [ppm/$^{\circ}C$]. The results of $0.93MgTiO_3-0.070CaTiO_3$ ceramics with $P_2O_5$/ 0.6 wt% sintered at $1250^{\circ}C$ exhibited can be dielectric constant of 21, the quality factor of 58,000 and the temperature coefficient of resonant frequency of 2.6 [ppm/${\circ}C$]. The size, insertion loss, center frequency and band width of GPS antenna were $20.5{\times}20.5{\times}6[mm]$,-10(dB) and 1575.42(MHz) respectively. The insertion loss, center frequency and band width of the fabricated GPS antenna were -11 (dB), 1579(MHz) and 22(MHz) respectively. The center frequency was higher than design result, but other characteristics of GPS antenna were similar to the results of design result.

• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.701-706
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• 2008

High frequency dielectric ceramics have potential for applications in mobile and satellite communications systems at frequencies higher than 10GHz. The Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics are known to have a high quality factor, a small temperature coefficient of the resonance frequency and a high dielectric constant. On the other hands, sintering at high temperature for extended time is required to obtain the ordered structure for high quality factor. In this study, the microwave dielectric properties of $ZrO_2$ and NiO-added Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid-state reaction have been investigated. Adding $ZrO_2$ and NiO could effectively promote the densification even the case of decreasing the sintering time. At the surface of samples, secondary phase of Ba-Ta compounds was formed possibly due to the evaporation of ZnO, however, the interior of the samples remained as pure Ba$(Zn_{1/3}Ta_{2/3})O_3$. The samples sintered at $1600^{\circ}C$ for 2h exhibited 1:2 ordering of Zn and Ta cations. Excellent microwave dielectric properties of $Q{\cdot}f$(>96,000 GHz) and ${\varepsilon}_r$=30 has been obtained.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.227-232
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• 2000

$MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.

• Korean Journal of Materials Research
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• v.33 no.8
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• pp.330-336
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• 2023

The effects of Ni²⁺ substitution for Mg²⁺-sites on the microwave dielectric properties of (Mg_1-xNi_x)(Ti_0.95(Mg_1/3Ta_2/3)_0.05)O₃ (0.01 ≤ x ≤ 0.05) (MNTMT) ceramics were investigated. MNTMT ceramics were prepared by conventional solid-state reaction. When the MgO / TiO₂ ratio was changed from 1.00 to 1.02, MgTi₂O₅ was detected as a secondary phase along with the MgTiO₃ main phase in the MNTMT specimens sintered at 1,400 ℃ for 4h. For the MNTMT specimens with MgO / TiO₂ = 1.07 sintered at 1,400 ℃ for 4h, a single phase of MgTiO₃ with an ilmenite structure was obtained from the entire range of compositions. The relative density of all the specimens sintered at 1,400 ℃ for 4h was higher than 95 %. The quality factor (Qf) of the sintered specimens depended strongly on the degree of covalency of the specimens, and the sintered specimens with x = 0.01 showed the maximum Qf value of 489,400 GHz. The dielectric constant (K) decreased with increasing Ni²⁺ content because Ni²⁺ had a lower dielectric polarizability (1.23ų) than Mg²⁺ (1.32ų). As Ni²⁺ content increased, the temperature coefficient of resonant frequency (TCF) improved, from -55.56 to -21.85 ppm/℃, due to the increase in tolerance factor (t) and the lower dielectric constant (K).