• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.4
• /
• pp.311-316
• /
• 2003

Effects of pores on the microwave properties in microwave dielectric ceramics were studied by a computer simulation. Scattering matrix S$\_$21/ obtained from the network analyzer was compared to the S$\_$21/ obtained from the simulation. From electric field distribution, the dominant resonant TE$\_$01$\delta$/ mode could be easily determined. The effects of the porosity and pore size inside the dielectrics on the microwave properties were investigated by the HFSS simulation. When the total pore volume remains constantly, the quality factor decreased as the pore size Increases. As the total pore volume of the dielectrics increased. quality factor decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.279-282
• /
• 2003

For the millimeter-wave dielectrics, Forsterite-based ceramics were produced. Pure forsterite ceramics($Mg_2SiO_4$) shows porous micro-structure and very low Q*f values, which is not suitable for the dielectrics for the millimeter-wave band. Several sintering aids including $Al_2O_3$, $Li_2CO_3$, $Li_2SiO_4$, were added to the forsterite ceramics in order to produce dense low-loss dielectrics. Among these additives, $Li_2CO_3$ is the most effective sintering aids. Several sub-components including NiO, ZnO, $SnO_2$, $TiO_2$, were added to enhance the microwave dielectric properties. $TiO_2$ is the most effective additive to enhance the dielectric properties at microwave bands. The simultaneous addition of $TiO_2$ and $Li_2CO_3$ increases Q*f value over 170,000, which can be used as dielectrics in millimeter-wave bands.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.352.2-352.2
• /
• 2014

In this present work, we report a Cu-Mn alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between Mn-based interlayer interlayer, thermal stability was measured with various low-k dielectrics. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the Mn based self-formed barriers after annealing were determined by the C concentration in the dielectric layers.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1415-1418
• /
• 2007

Electronic and structural properties of the interfaces formed by pentacene deposited on a polymer-based dielectrics are investigated by electron spectroscopy, atomic force microscopy, and water contact angle measurement. There is strong influence of surface treatment of the polymer dielectrics on the energy level alignment and the surface topography upon the pentacene deposition.

• Journal of Electrical Engineering and Technology
• /
• v.12 no.2
• /
• pp.820-829
• /
• 2017

Vegetable oil dielectrics have been used in transformers as green alternatives to mineral insulating oils for about twenty years, because of their advantages of non-toxic, biodegradability, and renewability. However, the viscosity of vegetable oils is more than 3 times of mineral oils, which means a poor heat dissipation capacity. To get low-viscosity dielectrics, transesterification and purification were performed to prepare vegetable oil methyl esters in this study. Electrical and physical properties were determined to investigate their potential as dielectrics. The results showed that the methyl ester products had good dielectric strengths, high water saturation and enough fire resistance. The viscosities (at $40^{\circ}C$) were 0.2 times less than FR3 fluid, and 0.7 times less than mineral oil, which indicated superior cooling capacity as we expected. With the assistance of 0.5 wt% pour point depressants, canola oil methyl ester exhibited the lowest pour point ($-26^{\circ}C$) among the products which was lower than FR3 fluid ($-21^{\circ}C$) and 25# mineral oil ($-23^{\circ}C$). Thus, canola oil methyl ester was the best candidate as a low-viscosity vegetable oil-based dielectric. The low-viscosity fluid could extend the service life of transformers by its better cooling capacity compared with nature ester dielectrics.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.12 no.1
• /
• pp.152-162
• /
• 1988

In recent years, attention has been paid to the ceramic material next to metals and plastics due to its inherent characteristics, i.e., good hardness, resistance to heat and corrosion. Recently, various kinds of ceramic dielectrics have been developed for application in industry. It is of prime importance to know the thermophysical properties for wider use of these new materials. However, no extensive effort has been made for systematic measurement of the properties. In this paper, the dielectric constant of five different kinds of ceramic dielectrics ware measured. We call these samples as MgO.SiO$_{2}$, MgTiO$_{3}$, TiO$_{2}$, CaTiO$_{3}$, and BaTiO$_{3}$. Which are currently in commercial sue. The values of thermal dirrusivities, specific heats, and thermal conductivities of these ceramic dielectrics sere measured as a function of temperature ranging from room temperature to about 1300k.

• Korean Journal of Materials Research
• /
• v.13 no.4
• /
• pp.259-265
• /
• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.78-81
• /
• 1997

The photocharge voltage technique is based on the measurement of a small electrical potential difference which appears on any solid body when subject to illumunation by a modulated laser light beam. This voltage is proportional to the induced change in the surface electrical charge and is nondestructively measured on various materials such as conductors, semicinductors and dielectrics. In this paper, photocharge voltage on conductors, semiconductors and dielectrics are measured nondestructively using a capacitative coupling. The test structures and the validity of this system to characterize the surface properties for soled materials are shown.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.278.1-278.1
• /
• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.301.2-301.2
• /
• 2016

Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).