• Title/Summary/Keyword: dielectricity

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Synthesis of Three Ring Type Compounds with Fluorine and NCS Groups as Candidates for VA mode Liquid Crystal Display

  • Heo, E.Y.;Kim, Y.B.;Kim, S.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.571-574
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    • 2003
  • Three ring type liquid crystalline compounds having 4-alklycyclohexyl group, 1,2-difluorobenzene and phenylisothiocyanate moieties as main skeleton were designed to have negative dielectricity. However, the compounds with 2,3,2'-trifluoro-3'-isothiocyanated biphenylcyclohexane core did not exhibit the nematic liquid crystalline phase because of two conformers by interaction of isothiocyanate and adjacent fluorine atoms. Also, 4-alkyl-2,2',3'-trifluoro-3-isothiocyanated biphenylcyclohexane core was designed expecting to have uniform conformers of isothiocyanate group. In the course of developing polyimides for VA mode LCD, we synthesized alkyl-3,5-diaminobenzene efficiently with various length of alkyl chains from commercially available di-t-butyl malonate and 3,5-dinitrobenzoyl chloride as starting material.

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The properties on the dispersion of Pentylcyanobiphenyl Liquid Crystal. (Pentylcyanobiphenyl 액정 물질의 유전분산특성)

  • An, Jun-Ho;Jeong, Dong-Hoe;Kim, Kyung-Hwan;Kim, Gui-Yeol;Kim, Myong-Ho;Choi, Myung-Kyue;Lee, Won-Jae;Kim, Tae-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.04a
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    • pp.13-17
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    • 2004
  • 펜틸시아노비페놀(PCB) 액정셀은 저주파 영역에서 유전율이 대단히 크게 나타나는 현상이 보인다. 그 원인은 액정셀 내의 불순물 이온의 거동이라고 생각된다. 액정셀 내에 존재하는 불순물 이온의 거동을 관찰하기 위하여 PCB 액정셀의 유전 분산특성을 측정하여 온도의존성, 막 두께 의존성, 직류전압 의존성등을 측정하였다.

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Synthesis and Photosensitive Properties of Poly[N-(formyloxyphenyl)maleimide] Containing Photosensitive Groups (Poly[N-(formyloxyphenyl)maleimide] 고분자의 합성과 자외선에 대한 반응특성)

  • Kim, Sang-Min
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.10 no.1
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    • pp.55-62
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    • 2004
  • Synthesis of poly[N-(formyloxyphenyl)maleimide](PFOMI) as photopolymer were investigated with various kinds of photosensitive groups. Generally, photopolyimide have some deficiencies in solubility, sensitivity, reserve stability of the photosensitive solution, and the precision of image pattern. The study has been required on those polymers which have high glass transition temperature and photo efficiency, and low dielectricity. The existing condensation resins require high curing temperature and perfect elimination of subreacted materials that are produced during the process after irradiation and various membrane damages such as the deformation and contraction in image pattern cure. In this study poly[N-(hydroxyphenyl)maleimide](PHPMI) was synthesized. The PHPMI were analyzed by H-NMR and FT-IR. The measured number average molecular weight of PHPMI was produced was $1.06{\times}10^4$. Poly[N-(formyloxyphenyl)maleimide](PFOMI) as a type of photo-Fries rearrangement was synthesized by NHPMI and formic acid followed by radical polymerization. PFOMI was analyzed by FT-IR, and photocharacteristics was investgated by UV spectra and FT-IR before and after UV irradiation. Based on the image characteristics of PFOMI measured from optical micrographs, it was formed that the resolution of positive type PFOMI was $0.5{\mu}m$.

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The Blanket Deposition and the Sputter Seeding Effects on Substrates of the Chemically Vapor Deposited Cu Films (Sputter Seeding을 이용한 CVD Cu 박막의 비선택적 증착 및 기판의 영향)

  • Park, Jong-Man;Kim, Seok;Choi, Doo-Jin;Ko, Dae-Hong
    • Journal of the Korean Ceramic Society
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    • v.35 no.8
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    • pp.827-835
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    • 1998
  • Blanket Copper films were chemically vapor deposited on six kinds for substrates for scrutinizing the change of characteristics induced by the difference of substrates and seeding layers. Both TiN/Si and {{{{ { SiO}_{2 } }}/Si wafers were used as-recevied and with the Cu-seeding layers of 40${\AA}$ and 160${\AA}$ which were produced by sputtering The CVD processes were exectued at the deposition temperatures between 130$^{\circ}C$ and 260$^{\circ}C$ us-ing (hfc)Cu(VTMS) as a precursor. The deposition rate of 40$^{\circ}C$ Cu-seeded substrates was higher than that of other substrates and especially in seeded {{{{ { SiO}_{2 } }}/Si substrate because of the incubation period reducing in-duced by seeding layer at the same deposition time and temperature. The resistivity of 160${\AA}$ Cu seeded substrate was lower then that of 40 ${\AA}$ because the nucleation and growth behavior in Cu-island is different from the behavior in {{{{ { SiO}_{2 } }} substrate due to the dielectricity of {{{{ { SiO}_{2 } }}.

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Influence of surface irregularity on dynamic response induced due to a moving load on functionally graded piezoelectric material substrate

  • Singh, Abhishek K.;Negi, Anil;Koley, Siddhartha
    • Smart Structures and Systems
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    • v.23 no.1
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    • pp.31-44
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    • 2019
  • The present study investigate the compressive stress, shear stress, tensile stress, vertical electrical displacement and horizontal electrical displacement induced due to a load moving with uniform velocity on the free rough surface of an irregular transversely isotropic functionally graded piezoelectric material (FGPM) substrate. The closed form expressions ofsaid induced stresses and electrical displacements for both electrically open condition and electrically short condition have been deduced. The influence of various affecting parameters viz. maximum depth of irregularity, irregularity factor, parameter of functionally gradedness, frictional coefficient of the rough upper surface, piezoelectricity/dielectricity on said induced stresses and electrical displacements have been examined through numerical computation and graphical illustration for both electrically open and short conditions. The comparative analysis on the influence of electrically open and short conditions as well as presence and absence of piezoelectricity on the induced stresses and induced electrical displacements due to a moving load serve as the salient features of the present study. Moreover, some important peculiarities have also been traced out by means of graphs.

Application of nonlocal elasticity theory on the wave propagation of flexoelectric functionally graded (FG) timoshenko nano-beams considering surface effects and residual surface stress

  • Arani, Ali Ghorbanpour;Pourjamshidian, Mahmoud;Arefi, Mohammad;Arani, M.R. Ghorbanpour
    • Smart Structures and Systems
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    • v.23 no.2
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    • pp.141-153
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    • 2019
  • This research deals with wave propagation of the functionally graded (FG) nano-beams based on the nonlocal elasticity theory considering surface and flexoelectric effects. The FG nano-beam is resting in Winkler-Pasternak foundation. It is assumed that the material properties of the nano-beam changes continuously along the thickness direction according to simple power-law form. In order to include coupling of strain gradients and electrical polarizations in governing equations of motion, the nonlocal non-classical nano-beam model containg flexoelectric effect is used. Also, the effects of surface elasticity, dielectricity and piezoelectricity as well as bulk flexoelectricity are all taken into consideration. The governing equations of motion are derived using Hamilton principle based on first shear deformation beam theory (FSDBT) and also considering residual surface stresses. The analytical method is used to calculate phase velocity of wave propagation in FG nano-beam as well as cut-off frequency. After verification with validated reference, comprehensive numerical results are presented to investigate the influence of important parameters such as flexoelectric coefficients of the surface, bulk and residual surface stresses, Winkler and shear coefficients of foundation, power gradient index of FG material, and geometric dimensions on the wave propagation characteristics of FG nano-beam. The numerical results indicate that considering surface effects/flexoelectric property caused phase velocity increases/decreases in low wave number range, respectively. The influences of aforementioned parameters on the occurrence cut-off frequency point are very small.

Pyroelectricity of BaTiO3-doped PMNT ferroelectric system for pyroelectric sensor

  • Yeon Jung Kim
    • Journal of Surface Science and Engineering
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    • v.56 no.6
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    • pp.380-385
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    • 2023
  • In this study, an MPB PMNT system containing 0.05 to 0.10 wt.% BaTiO3 was synthesized using a traditional chemical method and its pyroelectricity was investigated. Pyroelectricity, dielectricity, and ferroelectricity of the synthesized BaTiO3-PMNT system were analyzed by heat treatment at 1240~1280 ℃ for 4 hours to evaluate its applicability as a pyroelectric sensor. Unlike the simple ABO3 ferroelectric, the BaTiO3-doped PMNT system exhibited phase transition characteristics over a wide temperature range typical of complex perovskite structures. Although no dramatic change could be confirmed depending on the amount of BaTiO3 added, stable pyroelectricity was maintained near room temperature and over a wide temperature range. When the amount of BaTiO3 added increased from 0.05BaTiO3-PMNT to 0.10BaTiO3-PMNT, the electric field slightly increased from 5.00×103 kV/m to 6.75×103 kV/m, and the maximum value of remanent polarization slightly increased from 0.223 C/m2 to 0.234 C/m2. The pyroelectric coefficients of 0.05BaTiO3-PMNT and 0.10BaTiO3- PMNT at room temperature were measured to be ~0.0084 C/m2K and ~0.0043 C/m2K, respectively. The relaxor ferroelectric properties of the BaTiO3-PMNT system were confirmed by analyzing the plot of Kmax/K versus (T-Tmax)γ. The BaTiO3-doped MPB PMNT system showed a distinct pyroelectric performance index at room temperature, and the values were Fv ~ 0.0362 m2/C, Fd ~ 0.575×10-4 Pa-1/2.