• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.355-358
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• 2008

We report a method for improving characteristics of AC PDP in this study. This improvement is obtained by spreading MgO nanoparticles on transparent dielectric layer. These nanoparticles are covered with MgO protective layer by electron beam evaporation. MgO nanoparticle has difference in cathodoluminescence stronger than MgO layer by electron beam evaporation. This method worked for reducing statistical delay especially. Efficacy, discharge voltage and luminance were also improved But these improvements has limited lifetime because continuous ion bombardments changed characteristic of MgO surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1876-1878
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• 1996

This paper describes the combination surge generator for applying performance tests of surge protective devices. The $8/20{\mu}s$ waveform applies to low impedance circuits and components and is commonly used to determine the characteristics of surge protective devices. And the $1.2/50{\mu}s$ waveform applies to high impedance circuits and components and is used for testing dielectric behavior. Therefore, the combination surge generator, which generates $1.2/50{\mu}s$ voltage waveform under open-circuit conditions and $8/20{\mu}s$ current waveform under short-circuit condition, was proposed. Also this generator can produce $10/1000{\mu}s$ as well as $0.5{\mu}s/100kHz$ ring waveform.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.177-180
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• 2009

Here is presented the measurement on SrO- and SrCaO-PDP operated at lower voltage. SrO- and SrCaO-PDP attain high luminous efficacy at low voltage, where the breakdown voltage is 30 % lower than that of the ordinary MgO-PDP. A one-dimensional fluid model is applied for the simulation of PDP discharge. High VUV radiation efficiency is confirmed at high ${\gamma}_i$ and both low and high $V_s$ as in the experiment. Discharge analysis in simulation also shows that the high ${\gamma}_i$ protective layer leads to high plasma density especially near the cathode electrode, being responsible for high efficiency.

• 한국재료학회지
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• 제9권5호
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• pp.441-445
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• 1999

Alkaline earth metal oxides were added to the conventional MgO films as a protective layer for dielectric materials to have lower firing voltage(Vf) of the plasma display panel(PDP). Panels with various protective layers of MgO-alkaline earth metal oxides were prepared on glass by using e-beam evaporation and its effect on firing voltage characteristics were investigated. (Ba-Mg)O films had poor voltage characteristics because of higher activation energy of BaO. But, (Sr-Mg)O, (Ca-Mg)O and (Ca-Sr-Mg) O had better voltage characteristics than the conventional MgO. A mixture film of (Mg-Ca-Sr)O show the lowest firing voltage which is less than that of MgO by 20V. The chemical composition to have lowest firing voltage is MgO:SrO:CaO ratio of 6:2:2. The mixture of MgO-Alkaline earth metal oxides films showed good transmittance properties within the visual range.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.744-747
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• 2009

Plasma Display Panels (PDPs) have illustrated impressive results in terms of light emission efficiency of the Ne-Xe mixture compared with the He-Xe mixture. However, He-Xe has shown to achieve superior color purity. This paper presents the optimization of excitation efficiency and color purity for He-Ne-Xe ternary gas mixtures. Furthermore, we investigate the effect that a protective dielectric layer has on UV photon efficiency in a matrix known as electrode type PDP.

• 한국표면공학회지
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• 제36권1호
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• pp.74-78
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• 2003

The corrosion failure of electronic devices has been a major reliability concern lately. This failure is an ongoing concern because of miniaturization of integrated circuits (IC) and the increased use of polymers in electronic packaging. Recently, plasma-polymerized cyclohexane films were considered as a possible candidate for a interlayer dielectric for multilever metallization of ultra large scale integrated (ULSI) semiconductor devices. In this paper the protective ability of above films as a function of deposition temperature and RF power in an 3.5 wt.% NaCl solution were examined by polarization measurement. The film was characterized by FTIR spectroscopy and contact angle measurement. The protective efficiency of the film increased with increasing deposition temperature and RF power, which induced the higher degree of cross-linking and hydrophobicity of the films.

• 전기학회논문지
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• 제60권8호
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• pp.1479-1484
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• 2011

The existing leg-rest for transmission line construction was established on the ground as a structure. As a result of that, it caused some problems such as, a tremendous forest damage, excessive construction costs and the long time of construction period. In order to solve these problems, we suggest the protective net for an air installation. It is a new method of construction which has a dielectric strength with a light-weight and high-strength. And it's not influenced by a geographical feature. This excellent method doesn't affect a forest and can reduce tremendously the construction cost and period.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1019-1023
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• 2005

We have examined the electrical and optical characteristics of the plasma display panel produced by vacuum in-line sealing technology. In the MgO layer deposited at room temperature, after sealing at the panel temperature of $430^{\circ}C$, the luminous efficiency decreased compared with that of the panel before sealing. Moreover, firing and sustain voltage of the sealed panel increased compared with that of the panel before sealing. This was resulted from that the MgO protective layer was cracked by the softening of the dielectric layer during the sealing process. In order to avoid the MgO crack during the vacuum in-line sealing, thermally stable MgO layer or lower temperature sealing is required.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).