• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.5 no.4
• /
• pp.394-399
• /
• 1995

Dielectric properties and crystal structure changes with temperature were observed on $(Na_{0.5}Sr_{0.5})(Ti_{0.5}Nb_{0.5})O_{3}$ which had a superstructure due to oxygen octahedron tilting. Dielectric loss peak observed at 380 K was found to have a relation with a primitive cell change from tetragonal to cubic, however, in this case, dielectric constant variation was not observed. Therefore it was found that the dielectric loss was more senstive than the dielectric constant for detecting the structure change. After the structure change of primitive cell from tetragonal to cubic, X-ray diffraction peaks of superstructure, which completely disappear above 500 K, were still observed. And no dielectric property variations were found with the disappearence of superstucture.

• The Journal of Engineering Geology
• /
• v.15 no.3
• /
• pp.281-288
• /
• 2005

To evaluate a property of moisture distribution and volumetric water content on bentonite media the responses of complex dielectric constant were used which are measured by Frequency Domain Reflectometry with Vector Network Analyzer (FDR-V) system. The bentonite is widely used a barrier liner system in the waste disposal site, recently. In case of barrier liner system, generally, the coefficient of permeability should have to less than 10-7cm/sec. According to the results, the complex dielectric constants are increasing with increase the volumetric water content and temperature together. Also the variation of complex dielectric constant due to temperature gradient is confirmed that the moisture movements are increasing with the variations of temperature from high range to low range, which is represented the property of moisture distribution in the bentonite.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.10
• /
• pp.1087-1094
• /
• 2014

An numerical technique of impedance boundary condition to improve an efficiency in the process of moment method with CFIE(Combined Field Integral Equation), which is widely used to analyze the scattering property of dielectric scatterers, and results of its cross-validations are presented in this study. Application of the impedance boundary allows to represent the equivalent surface currents of dielectric scatterer depicted by both kinds of electric/magnetic surface currents(Js, Ms) to the single surface current by Js or Ms only. Accuracy of this technique is validated by the existing CFIE and theoretical values such as Mie-series solution and small perturbation scattering model. The computational difference of less than 1 dB was verified within an imaginary part of dielectric constant more than 12, as well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.22-22
• /
• 2010

0.1~5.0 at% CuO doped ZnO specimens were fabricated by a commercial ceramic process and sintered at 900~$1200^{\circ}C$ for 3h in air. The relative densities were over 97% for all samples and average grain size increased with CuO doping. The defect trap levels i.e. ionization energies of defects were increased linearly with CuO contents as 0.2 eV to 0.7 eV by using admittance spectroscopy and dielectric functions. The apparent activation energies of grain boundaries were varied but in the range of 0.96~1.1 eV. Dielectric constant were increased with CuO contents and sintering temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.12
• /
• pp.979-986
• /
• 2001

This paper was researched the effect of slurry stability on the mechanical and electrical property of the porcelain insulator with various raw materials such as feldspar, quartz, clay and l7wt% alumina. The slurry was fabricated after ball milling the mixed raw materials. Green compacts were made by the extrusion and were sintered at 1300$\^{C}$ for 60min in the tunnel kiln. All of the specimens were densified 96% of the theoretical density. The 3-point flexural strength($\sigma$$\_$B/) of the specimen stabilized slurry pH 7.8 was 1650 k9/㎠ and the vickers hardness(Hv) and the fracture toughness(K$\_$IC/) were 27.5 GPa and 2.2 MPa$.$m$\^$$\sfrac{1}{2}$/, respectively. The mechanical properties of the specimen stabilized slurry PH 9.3 were 1716 kg/㎠($\sigma$$\_$B/), 27.6 GPa(Hv) and 3.0 MPa$.$m$\^$$\sfrac{1}{2}$/(K$\_$IC/), respectively. The dielectric strength was increased from 8.3kV/mm to 13.2kV/mm as the increase of the slurry pH from 7.8 to 9.3. Therefore the physical properties of the specimen stabilized slurry pH 9.3 were improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.8
• /
• pp.679-687
• /
• 2001

It is known that amorphous BaTiO$_3$ thin films have good insulating properties[1][2]. In this investigation, amorphous BaTiO$_3$ thin films were deposited by rf magnetron sputtering on thick BaTiO$_3$ films of AC powder EL devices which were fabricated by screen-printing. The electrical and optical properties of the EL devices were then investigated. Adding amorphous BaTiO$_3$ thin film, it showed that leakage current density was decreased. Especially, leakage current density was decreased more with he sample of 0.5-hour deposition than the sample of 4-hours deposition. This result led to the improvement of luminous efficiency by 11%. It could be concluded that proper amorphous BaTiO$_3$ thin film deposition improved the surface property of dielectric layer.

• Journal of the Korean Ceramic Society
• /
• v.33 no.1
• /
• pp.17-24
• /
• 1996

Pb(Mg1/3Nb2/3)O3 powder with high purity chemical homogeniety and reactivity was prepared by solvent eva-poration of common solution. The common solution was fabricated using a Pb(NO3)2 Mg(NO)3 and NB solution which was prepared by dissolving NbC in H2O2 acquous solution. In precusor powder prepared by solvent evaporation method the synthetic temperature of Pb(Mg1/3 Nb2/3)O3 phase was lowered. And the formation of homogeneous Pb(Mg1/3Nb2/3)O3 phase was enhanced but the formation of pyrochlore phase was reduced. The dielectric constant of PMN ceramics from the synthesized powder was found to increase with both sintering temperature and excess MgO and subsequent analysis of the microstructures confirmed that this was due to an increase in grain size. The grain size dependence is explained as a consequence of low-permittivity grain boundaries.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1299-1300
• /
• 2007

In this study, low temperature sintering property of (1-x)$TiTe_{3}O_{8}-xMgTiO_{3}$ ceramics were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_{3}O_{8}$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_{3}O_{8}$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. The bulk densities and dielectric constants were decreased with increasing of $MgTiO_3$. However, the quality factors were increased with $MgTiO_3$ addition. Also, TCRF was shifted to negative(-) direction. Microwave dielectric properties of (1-x)$TiTe_{3}O_{8}-xMgTiO_{3}$ ceramics had similar tendency with calculated value by the mixing rule. The dielectric constant, quality factor and TCRF of $05TiTe_{3}O_{8}-0.5MgTiO_{3}$ ceramics sintered at $830^{\circ}C$ for 3h. were 26.19, 43,290GHz and $-3.9ppm/^{\circ}C$, respectively.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1115-1118
• /
• 2006

Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at $190{\bullet}\;.{\bullet}$ To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then ${\alpha},{\omega}-dihexylquaterthiophene$ was drop-cast between source and drain electrical performance of the fabricated transistor.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.12 no.5
• /
• pp.644-651
• /
• 2009

In this paper, the design results of a $22.5^{\circ}$ diode phase shifter for the RADANT lens and two $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layer shows about $2^{\circ}$ phase shift error.