• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.483-488
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• 2016

Ultrasound imaging by using piezoelectric materials, such as lead zirconium titanate (PZT) has been one of the most preferred modes of imaging in the medical field due to its simple, low cost and non-ionizing radiation in comparison to other imaging techniques. Recently, the market demand for portable ultrasound is becoming larger with applications in developing countries, disaster area, military, and emergency purposes. However, most of ultrasound probes used is bulky and high power consumable, so unsuitable for such applications. In this study, the 3 layered ceramic specimen consisted of 128 pitches of $420{\mu}m$ in width and $450{\mu}m$ in thickness were prepared by using the Ti-rich PZT compositions co-fired at $1,050^{\circ}C$. Their electrical and ultrasound pulse-echo properties were investigated and compared to the single layer specimen. The 3 layered ultrasound probe showed 1.584 V of Vp-p, which is 3.2 times higher than single layered one, implying that it would allow effectively such a portable ultrasound probe system. The result were discussed in terms of higher capacitance, lower impedance and higher dielectric coefficient of the 3 layered ultrasound probe.

• Applied Microscopy
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• v.32 no.2
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• pp.157-162
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• 2002

Microstructural investigations of $(Na_{1/2}Pr_{1/2})TiO_3$ (NPT) complex perovskite compounds were carried out using X-ray diffractometry and transmission electron microscopy. NPT had not 1:1 chemical ordering of Asite cations but had the antiphase and inphase tilting of oxygen octahedron and the antiparallel shift of cations. Both the antiphase boundaries and the ferroelastic domains were not present in the microstructure. Unidentified second phase was found in the microstructure. The measured dielectric properties were ${\varepsilon}_r=99.6,\;Q\;{\Large f}_o=1124\;GHz,\;{\tau}_{f}=-233.64ppm/^{\circ}C$.

• Polymer(Korea)
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• v.35 no.5
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• pp.375-377
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• 2011

$PbTiO_3$/P(VDF/TrFE) 0~3 composites thin films with 0.10 and 0.13 of ceramic volume fraction factor have been fabricated by two-step spin coating technique and analyzed. 0~3 connectivity of $PbTiO_3$/P(VDF/TrFE) composites film was observed successfully by SEM micrography. The SEM picture confirmed 0~3 connectivity. And, in all the properties, 0~3 $PbTiO_3$/P(VDF/TrFE) composites film was superior to P(VDF/TrFE) copolymer. Therefore, with a good low-dielectric constant and a high pyroelectric coefficient, the composite thin films can be used for a new pyroelectric infrared sensor of higher performance.

• Polymer(Korea)
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• v.35 no.2
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• pp.176-182
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• 2011

Liquid crystalline aromatic polyesters (LCPs) are representative examples of thermotropic liquid crystalline polymers, whose structure-property relationships have been the subject of many researches. In this study, we synthesized organo-soluble liquid crystalline aromatic polyesters, and their composites with acetylene-terminated thermoset resins were prepared and characterized. Soluble LCPs were synthesized by employing 6-hydroxy-2-naphthoic acid, terephthalic acid, isophthalic acid, and 4-aminophenol as monomers via condensation polymerization based on transesterfication and transamidation. Acetylene-terminated thermoset resins were synthesized by the reaction of 4-ethynylaniline with terephthaloyl dichloride, isophthaloyl dichloride or 4,4'-biphenyldicarbonyl dichloride. We prepared the soluble LCP/thermoset composites by solution blending followed by thermal treatment. The thermal stability, thermal expansion coefficient, and dielectric properties of the composite were studied.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.499-499
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• 2011

Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

• Korean Journal of Optics and Photonics
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• v.16 no.6
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• pp.553-559
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• 2005

Pulsed terahertz (THz) radiation was generated by optical rectification and detected by a fee space electro-optic sampling (FS-EOS) method. We used ZnTe (110) crystals for both generation and detection. By coating dielectric anti-reflection film on the ZnTe crystal surface, we can reduce the reflectance of a pump laser beam from $30\%$ to $2\%$, and the terahertz pulse amplitude increased $27\%$ compared with an uncoated crystal. A wider bandwidth of THz radiation was obtained by using a thinner crystal but the signal intensity was decreased in this case. And variations of THz radiation by changing orientation of the ZnTe crystal with respect to the pump (or probe) laser polarization, and by changing the power of the pump laser have also been investigated and discussed.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.19-19
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• 2003

A cubic perovskite-type CaCu₃Ti₄O/sub 12/ compound has recently drawn a great attention because of an extraordinary high permittivity (～10⁴ at 1 kHz) at room temperature and its near temperature-independence over a wide temperature region, and thus numerous literature have been reported on CCTO polycrytalline ceramics and thin films. However, only a few literature have been reported on the CCTO single due to the lack of information about the CCTO primary phase field. On the basis of our recent experimental determination of the CCTO primary phase field, we could grow ACu₃Ti₄O/sub 12/(A=Ca, Sr) single crystals using both top-seeded solution growth and flux growth methods. This presentation will include three major parts. In part I, the thermal decomposition reaction of CCTO and its primary phase field in the CaO-CuO-TiO₂ ternary system will be presented. Detailed growth conditions of ACu₃Ti₄O/sub 12/(A=Ca, Sr) single crystals and characteristics of as-grown crystals will be followed in Part II. Part III will be comprised of dielectric properties of as-grown ACu₃Ti₄O/sub 12/(A=Ca, Sr) single crystals. Our experimental results will be compared with those of previous reports for discussion.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1041-1046
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• 1999

(Zr(sub)0.8Sn(sub)0.2)$TiO_4$세라믹스와 소결조제로서 ($B_2$$O_3$.Li$_2$O)의 첨가에 따른 마이크로파 유전특성 및 미세구조에 미치는 영향에 대하여 연구하였다. 1.0 mol.% $Sb_2$O(sub)5를 첨가하고 130$0^{\circ}C$에서 5시간 소결한 (Zr(sub)0.8Sn(sub)0.2)$TiO_4$세라믹스의 경우 ($B_2$$O_3$.Li$_2$O)첨가량 증가에 따라 치밀화 및 결정립 성장에 의해 유전상수와 Q.f값은 증가하여 첨가량이 0.35wt.%에서 최대값인 38과 59,000을 각각 나타내었으며, 0.50wt.% 이상 첨가한 경우에서는 제 2상의 생성으로 인하여 감소하였다. 1.0 mol% Sb$_2$O(sub)5와 0.35wt.% ($B_2$$O_3$.$Li_2$O)를 첨가한 (Zr(sub)0.8Sn(sub)0.2)TiO$_4$세라믹스를 125$0^{\circ}C$와 135$0^{\circ}C$에서 5시간 소결한 경우에는 각각 미반응 TiO$_2$의 존재와 과대입자성장에 의한 결정립내기공의 생성으로 인하여 마이크로파 유전특성은 저하되었다.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.04a
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• pp.35-43
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• 2001

Flip chip assembly on organic substrates using ACAs have received much attentions due to many advantages such as easier processing, good electrical performance, lower cost, and low temperature processing compatible with organic substrates. ACAs are generally composed of epoxy polymer resin and small amount of conductive fillers (less than 10 wt.%). As a result, ACAs have almost the same CTE values as an epoxy material itself which are higher than conventional underfill materials which contains lots of fillers. Therefore, it is necessary to lower the CTE value of ACAs to obtain more reliable flip chip assembly on organic substrates using ACAs. To modify the ACA composite materials with some amount of conductive fillers, non-conductive fillers were incorporated into ACAs. In this paper, we investigated the effect of fillers on the thermo-mechanical properties of modified ACA composite materials and the reliability of flip chip assembly on organic substrates using modified ACA composite materials. Contact resistance changes were measured during reliability tests such as thermal cycling, high humidity and temperature, and high temperature at dry condition. It was observed that reliability results were significantly affected by CTEs of ACA materials especially at the thermal cycling test. Results showed that flip chip assembly using modified ACA composites with lower CTEs and higher modulus by loading non-conducting fillers exhibited better contact resistance behavior than conventional ACAs without non-conducting fillers. Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of $SiO_2filler$ to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. Our results indicate that the electrical performance of ACF combined with electroless Wi/Au bump interconnection is comparable to that of solder joint.