• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.605-608
• /
• 2002

In order to improve the microwave dielectric properties of ZnO+$TiO_2$ ceramic systems, we studied the relations among microstructures, phases, and microwave dielectric properties at various mole ratio and sintering temperatures. The optimum composition was found to be 0.2ZnO+0.8$TiO_2$ when sintered at $1100^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 22,500 GHz, ${\varepsilon}_r$ = 73, and $\tau_f=+210ppm/^{\circ}C$.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2008년도 제39회 하계학술대회
• /
• pp.1248-1249
• /
• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were 38.11, with a dielectric loss of 0.134, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were about -3.15%/K.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 하계학술대회 논문집 C
• /
• pp.1463-1466
• /
• 2002

In this paper, the thermal analysis and dielectric/insulation properties were investigated with considering the temperature depenence Using the sheet of semi-conductor/XLPE came from 22 kV power cables, the dielectric/insulation properties and temperature dependence were measured under 1kHz. According to the results we can verify that only semi-conductor sheet changed linearly, and with the unstable results. the dielectric/insulation properties of the semi-conductor/XLPE sheet show the highest value in the range of 40 $^{\circ}C$ and 50 $^{\circ}C$ and are rely on XLPE rather than semi-conductor in terms of the temperature.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
• /
• pp.293-295
• /
• 1987

This paper deals with the dielectric properties dielectric breakdown strength and mechanical tensile properties according to heat - treatment condition of polyurethane resin. This resin is heat - treated over a range of temperature from $50^{\circ}C$ to $150^{\circ}C$. It is shown that the dielectric dissipation factor decreases with increase of heat - treatment temperature of the sample exept for the sample heat - treated at $150^{\circ}C$. The maximum dielectric breakdown strength is appeared for the sample heat - treated for 10 hours at $100^{\circ}C$, after curing for 24 hours at room temperature. The optimal heat - treatment condition in the view point of the electrical and mechanical properties is appeared for the sample heat - treated for 10 hours at $100^{\circ}C$, after curing for 24 hours at room temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.409-410
• /
• 2008

We studied dielectric properties of Organic Light-emitting Diodes(OLEDs) depending on applied voltage of AF(Amorphous Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (AF)/Al. AF is deposited 5 [nm] as deposition rate of 0.1~0.2 [$\AA$/s] in high vacuum of $5\times10^{-6}$ [Torr]. In result of these studies, we can know dielectric properties of OLEDs. The impedance decreases as the applied voltage increases and the Cole-Cole plots of devices are decreases as the applied voltage increases.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.441-444
• /
• 2000

In this paper, dielectric properties of XLPE sheets of 22kV cable with semiconducting and water were investigated. The breakdown strength of XLPE under rod/needle electrode were measured at without oil. It is found that the dielectric properties such tan$\delta$ of XLPE sheet dependence on semiconducting and water layer and are decreased much lower increase with temperature. The breakdown strength and the electrode effect are obtained as a function of thickness, and a equation for the sheet thickness dependent breakdown strength is also discussion.

• 한국전기전자재료학회논문지
• /
• 제16권7호
• /
• pp.611-615
• /
• 2003

Eu-doped lead zirconate titanate(Pb$\sub$1.1/(Zr$\sub$0.6/Ti$\sub$0.4/)O$_3$; PZT) thin films on the Pt/Ti/SiO$_2$/Si substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Eu content. Eu-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Eu content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Eu content. The 0.5 mol% of Eu-doped PZT thin film showed improved fatigue characteristic comparing to the undoped PZT thin film.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권1호
• /
• pp.61-67
• /
• 1997

We have studied dielectric properties of sol-gel derived tantalum oxide thin films as the insulators. As the sample is annealed from 300.deg. C to 700.deg. C, it is found amorphous below 600.deg. C and crystalline over it. Dielectric constant is maximum(18.6) when Ta$_{2}$O$_{5}$ film was annealed at 400.deg. C. It is found that dielectric strength in Ta$_{2}$O$_{5}$ film annealed at 400.deg. C (1.5MV/cm) increases and then decreases over annealed at 500.deg. C. This phenomenon was attributed to pinhole effect and crystallization. The de conduction properties can be interpreted by Poole-Frenkel effect.ect.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
• /
• pp.116-117
• /
• 2007

The $V_2O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_2O_5$ thin films annealed at $300^{\circ}C$ were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the $V_2O_5$ thin films annealed at $300^{\circ}C$ were about -2.65%/K.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.321-324
• /
• 2003

The effects of various sintering additives such as $Bi_2O_3+V_2O_5$, $BiVO_4$, $B_2O_3$, and $CuO+V_2O_5$ on the low-temperature sintering and microwave dielectric properties of $(ZnMg)TiO_3$ system were studied. Sintering was enhanced by the sintering additives and highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature of $910^{\circ}C$. $(Zn_{0.8}Mg_{0.2})TiO_3$ with 6.19 mol.%$B_2O_3$ was found to show the best sintering and microwave dielectric properties.