• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.187-190
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• 1998

In this paper a probe for the' measurement of dielectric properties of dielectric sheet materials is designed and implemented as a coaxial air line type. Using the broadband impedance method with this measurement probe the dielectric constant and loss tangent of the glass-epoxy and teflon are determined in the frequency range of 0.1 - l.O[GHz] with the temperature variation from $25[^{\circ}C]$ up to $65[^{\circ}C]$. A measured relative dielectric constant of the glass-epoxy is 4.42 and a loss tangents is 0.019 relatively, and the relative dielectric constants of teflon is 2.17 and a loss tangents is 0.002 relatively

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.21-25
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• 1989

Theory and experimental results are presented to show the possibility of using a dielectric rod resonator method for characterizing dielectric materials at microwave frequency. The measuring structure is a resonator made up of a cylindrical dielectric rod placed between two parallel conducting plates. In this system, the TE$\_$011/ mode frequency was adapted to minimize the effect of the air-gap between the rod and the conducting plates. The dielectric properties are computed from the resonance frequencies, structure dimensions and 3-dB bandwidth.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.137-143
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• 2008

High voltage MLCCs with C0G temperature coefficient characteristics could apply DC-DC invertor were investigated for its dielectric properties. Also we manufactured MLCC through various process and studied the characteristics of dielectric break down voltage [BDV] and dielectric property as the variation of thickness in the green sheet and how to pattern the internal electrode. As the thickness of green sheet is increase, the dielectric BDV per unit thickness is decreased. But as the pattern of internal electrodes were floated we could manufacture the high voltage MLCC maintained its dielectric BDV a unit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.148-151
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• 2000

In this paper, the dielectric properties of epoxy composites used for transformers are studied. The dielectric permittivity and loss of specimen are measured at the temperature range of 20[$^{\circ}C$]~150[$^{\circ}C$] about frequency 30[Hz], 1[kHZ] and 30[kHz] respectively from a series of experiments. Consequently, observed higher values of dielectric permittivity and loss in filled epoxy are attributed to Maxwell-Wagner Polarization effect. Also, glass transition temperature was shifted to higher temperature and value of dielectric permittivity and loss were decreased due to 2nd curing.

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 하계학술발표회
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• pp.172-173
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• 2002

As feature sizes of circuits and devices approach 100 m and chip frequencies climb into the upper gigahertz to terahertz range, it becomes increasingly important to have a convenient method of characterizing properties of thin dielectric films in the GHz to THz frequency range [1]. To measure the dielectric and optical properties of materials at THz frequency, a TH2 time-domain spectroscopy has been utilized during past decade. (중략)

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.935-940
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• 2009

In this research, the composites (100-x)LCP-xBNT (x = 0, 10, 20, 30, 40 vol.%) were fabricated with thermoplastic LCP(Liquid Crystal Polymer) and BNT($BaNd_2Ti_4O_{12}$) which is a high frequency dielectric material. Their dielectric properties, mechanical strength and microstructure were investigated by Impedance analyser, Instron and SEM. In order to fabricate LCP-BNT composites, LCP resin was put into the twin screw type mixer($310^{\circ}C$), melted by keeping for 10 min. After that, BNT filler was dispersed with melted LCP resin for 15 min. in the mixer. For measuring the dielectric properties and mechanical strength, Composite specimens were made by pressing composite granule (LCP-BNT) with 7 ton in the mold at $310^{\circ}C$. With increasing the BNT content (0~40 vol.%) of the composite, Its dielectric constant increased, dielectric loss and flexural strength decreased. The dielectric constant and flexural strength of composites with 20~30 vol.% of BNT filler are 4.1~6.0 and 35~55 MPa respectively. BNT/LCP composite is the potential substrate material for the high frequency application.

• 한국세라믹학회지
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• 제36권9호
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• pp.915-922
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• 1999

Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics were inves-tigated with the various cooling rate. Dielectric constant was nearly same value while the unloaded Q value was largely affected by cooling rate. The Q.f of 42,140 at 7 GHz was obtained for the specimens with cooling rate of 1$^{\circ}C$/min. The effect of the cooling rate on the change of the ionic the electronic polarization and the intrinsic microwave loss of the specimens were investigated by the infrared reflectivity spectra from 50 to 4000cm-1 which were calculated by Kramers-Kroning analysis and the classical oscillator model. The relative tendency of microwave dielectric properties of the specimens calculated from the relfectivity data were in good agreement with the results by the post resonant method.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.852-858
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/$SiO_2$/Sisubstrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$ thin film showed the lowest value of 5.13$\times 10^{-7} A/{cm}^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}Tio_{3}$ thin films were 333, 0.0095, and 31.1%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.127-130
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• 2002

In this study, development of a new LTCC material using a non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. For LTCC application, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, CaWO$_4$ was tamed out the suitable LTCC material. CaWO$_4$ can be sintered up to 98% of full density at 1200$^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 10.15, 62880GHz, and -27.8ppm/$^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, 0.5∼1.5 wt% LiF were added to CaWO$_4$. LiF addition reduced the sintering temperature/time down to 800$^{\circ}C$/10∼30min due to the reactive liquid phase sintering. Dielectric constant lowered from 10.15 to 9.38 and Q x fo increased up to 92000GHz with increasing LiF content.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.776-779
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• 2004

The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.