• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.4
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• pp.587-594
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• 2023

In this paper, we present the design and optimization process of an on-body microstrip patch antenna with a paired T-type defect for monitoring fracture recovery of human legs. This antenna is designed to be light, thin and compact despite the improvement of return loss and bandwidth performance by adjusting the size of the T-type defect. The structure around the applied human leg is structured as a 5-layer dielectric plane, and the complex dielectric constant of each layer is calculated using the 4-pole Cole-Cole model parameters. In a normal case without bone fracture, the return loss of the on-body antenna is -66.71dB at 4.0196GHz, and the return loss difference ΔS₁₁ is 37.95dB when the gallus layer have a length of 10.0mm, width of 1.0mme, and height of 2.0mm. A 3'rd degree polynomial is presented to predict the height of the gallus layer for the change in return loss, and the polynomial has a very high prediction suitability as RSS = 1.4751, R² = 0.9988246, P-value = 0.0001841.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.962-966
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• 2001

Crystal structure of PbBi$_2$Nb$_2$$O_{9}$ and $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ were determined by Rietveld method using neutron diffraction data in the temperature range of 300 K~1273K. Phase transition temperature were measured from the dielectric permittivitytemperature curve. The PbBi$_2$Nb$_2$$O_{9}$ showed a phase transition at about 810 K. In the Sr-excess compound $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ the phase transition was suppressed down to room temperature. Several structural models were tested by the Rietiveld refinement. Based on the \`R\` values and the structural parameters, the B2cb model is judged to be the most feasible one for the high temperature phase at above 810 K of the PbBi$_2$Nb$_2$$O_{9}$. The $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ sample was refined to show the most reliable results by the Am2m model.sults by the Am2m model.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.11a
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• pp.552-554
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• 1999

Phonon scattering and impact ionization models have been presented to analyze hot carrier transport in high energy region, using full band model and Fermi's golden rule. We have investigated temperature dependent properties for impact ionization process of Si using realistic energy band structures at 77K and look. The realistic full band model, obtained from the empirical pseudopotential method with local from factors, is used to calculate scattering rate. The accurate calculation of impact ionization rate requires the use of a wavevector- and frequency-dependent dielectric function ξ ( q,$\omega$). The empirical phonon scattering rate P$\sub$ph/, is given by deriving from linear function for P$\sub$ph/ versus D(E) since the phonon scattering rate is linearly depended on density of states D(E). Impact ionization rate p,, is calculated from the first principle's theory. and fitted by modified Keldysh formula having power of above 2.

• Korean Journal of Agricultural Science
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• v.45 no.4
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• pp.847-857
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• 2018

Recently, customers' demand and attention to dried agricultural products or foods have increased due to their convenience and nutritional values. Conventional drying methods such as solar drying and hot air drying have been most widely used for producing a large amount of dried agricultural products; however, those methods require quite a long time and high energy consumption. To compensate for these issues associated with conventional methods, dielectric heating such as microwave and radio frequency heating has been used as a supplemental method in the drying procedure. This study investigated the microwave drying characteristics of squash slices with different thicknesses under different microwave power intensities and determined the best drying model that could precisely describe the experimental drying curves of the squash slices. The squash was cut into slices with two different thicknesses (5 and 10 mm), and then, they were dried under different microwave power intensity ranges between 90 and 900 W with an increase interval of 90 W. Six drying models were tested to evaluate the fit to the experimental drying data, and the effective moisture diffusivity ($D_{eff}$) values of the squash slices under microwave drying were determined. The results clearly show that as the microwave power was increased, the drying time of both squash slices was significantly decreased, and the slope of the drying rate increased. The effective moisture diffusivity was also significantly related with the microwave power intensities and thicknesses of the slices. In addition, the Page model was most suitable to delineate the drying curves of both squash slices under different microwave power intensities.

• Advances in materials Research
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• v.1 no.2
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• pp.115-128
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• 2012

The structural and electrical properties of $(1-x)Ba(Sm_{1/2}Nb_{1/2})O_3-xBaTiO_3$; ($0{\leq}x{\leq}1$) ceramics were prepared by conventional ceramic technique at $1375^{\circ}C$/7 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were derived from the X-ray diffraction (XRD) data using FullProf software whereas crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm m. Dielectric study revealed that the compound $0.75Ba(Sm_{1/2}Nb_{1/2})O_3-0.25BaTiO_3$ is having low and ${\varepsilon}^{\prime}$ and ${\varepsilon}^{{\prime}{\prime}}$ a low $T_{CC}$ (< 5%) in the working temperature range (up to+$100^{\circ}C$) which makes this composition suitable for capacitor application and may be designated as 'Stable Low-K' Class I material as per the specifications of the Electronic Industries Association. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in the system. The ac conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy of the compounds.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.111-115
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• 2009

We present a study on the reflection of optically controlled microwave pulses from non uniform plasma layers in semiconductors. The transient response of the microwave pulses in different plasma layers has been evaluated by means of the reflection function of dielectric microstrip lines. The lines were used with an open-ended termination containing an optically induced plasma region, which was illuminated by a light source. The reflection characteristics impedance resulting from the presence of plasma is evaluated by means of the equivalent transmission line model. We have analyzed the variation of the transient response in a 0.01 cm layer with a surface frequency in the region of 128 GHz. In the reflection the variation of the diffusion length $L_D$ is large compared with the absorption depth $1/{\alpha}_l$. The variation of the characteristic response of the plasma layer with differentially localized pulses has been evaluated analytically. The change of the reflection amplitude has been observed at depths of 0.1 cm, 0.01 cm and $0.1{\times}10^{-5}$ cm respectively.

• 전기의세계
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• v.30 no.7
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• pp.441-447
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• 1981

As a preceeding work for the study on dielectric characterstics of a kind of low density polyethylene introduced morphological change by mechanical method, glass transition temperature which is regarded as a macroscopic aspect for relaxation of molecular chain segments has been observed by means of temperature dependent dilatometric measurement. The origina specimen clearly shows two knees which correspond to two peaks (.gamma. and .betha. peak) in the intenal friction measurement, suggesting the existence of separated glass transition temperatures at 150.deg.k and 260.deg.k respectively. On the specimen irradiated to 100 Mrad both glass transition temperatures tend to shift towards high temperature sides because of crosslinking by irradiation. furthemore an evidence can be seen that radiation effect, even in amorphous phase, is also slelctive depending on slight morphological differences. The specimen extended to four times in length shows a peculiar nature such as negative linear thermal expansion coefficient increasing with temperature between 220.deg.k and ambient temperature and that this fact is interpreted by considering that c axis of the lattice aligns along the extended direction by drawing, further c axis inherently possesses the characteristics of negative linear thermal expansion coefficient. For the observations that the relatively small positive linear expansion on the specimen extended to ca. two times as well as the part below 220.deg.k of the specimen extended to four times, it is considered for the reason of the facts that the incompletely oriented region indicated as the middle part of Peterlin's model tends to restore partially to orginal arrangement-a kind of phase transition-as increasing with temperature.

• Journal of Electrical Engineering and Technology
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• v.10 no.2
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• pp.634-640
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• 2015

This paper deals with the design of a microstrip line feed toppled T shaped microstrip patch antenna that gives dualband characteristics at 4 GHz and 6.73 GHz respectively. The simulation of proposed antenna geometry has been performed using method of moment based IE3D simulation software. A radial basis function neural network (RBFNN) is used for the estimation of bandwidth for dualband at 4 GHz and 6.73 GHz respectively. In RBFNN model, antenna parameters such as dielectric constant, height of substrate, and width are used as input and bandwidth of first and second band is considered as output of the network. To validate the RBFNN output, an antenna has been physically fabricated on glass epoxy substrate. The fabricated antenna can be utilized in S and C bands applications. RBFNN results are found in close agreement with simulated and experimental results.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.199-205
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• 1996

InGaAs eqitaxial layers have been selectively grown on patterned GaAs(100) substrates by chemical beam epitaxy (CBE) using triethylgallium (TEGa), trimethylindium (TMIn), and unprecracked monoethylarsine (MEAs). Facet growth of InGaAs epilayers has also been investigated at the various growth temperatures and Si4N4 dielectric pattern directions. In [011] jirection of mask, the change from (311), (377) and (111) facets to (311) facet with increasing growth temperature was observed. In [011] direction, however, the change from (011) and (111) facets to (111) facet with increasing growth temperature was observed. These results are attributed to the sidewall growth caused by different surface migration lengths of reactants. The formation of U-shaped (100) top surface is also discussed in terms of dangling bond model.

• Journal of Korean Society for Atmospheric Environment
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• v.18 no.1
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• pp.51-58
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• 2002

Destruction process of toluene using a wire-cylindrical BBD (Dielectric Barrier Discharge) reactor packed with catalysts was investigated to characterize the synergetic effects of non-thermal plasma and catalyst process. The catalysts used in the present study were ${\gamma}$-Al$_2$BO$_3$ and Pt/${\gamma}$-Al$_2$O$_3$. Under the numerous test conditions, specific energy density (SED (J/L)) and the conversion of toluene, defined as (1 -[C$_{f}$]/[C$_{i}$]), were measured. The test results showed that toluene decomposition efficiency followed the pseudo-first order in the case of plasma only process. The pseudo-first order process, however, was modified to pseudo-zeroth order reaction in the case of catalyst-assisted plasma process. This modification of the reaction order was verified based on a simple kinetic model proposed in the present study. Owing to the modification of reaction order, which resulted from the catalytic process, the specific energy to achieve the high removal efficiencies, i.e. 80~90%, was reduced significantly.y.y.