• Title/Summary/Keyword: dielectric model

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A Simplified Unified Model for Predicting the Dielectrophoretic Aactivity of Magnetic Nanoparticles Aimed at Enhancing the Dielectric Characteristics of Transformer Oil

  • Lee, Jong-Cheol;Jeon, Hong-Pil
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.431.2-431.2
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    • 2014
  • The dielectric breakdown voltage (DBV) is a measure of an insulating fluids ability to withstand a high electric field stress without breaking down. Conventionally, the presence of water or particulate matter in a dielectric fluid comprises the liquid's breakdown strength. However, the addition of magnetic nanoparticles (MNPs) in the base oil can increase the dielectric breakdown voltage of the fluid reversely, if the condition of the added particles in the fluid is in balance with that of keeping down the initiation and propagation of electrical streamers. In this study, we developed a mathematical model by a set of coupled, nonlinear equations using the COMSOL multiphysics finite element simulation suite and calculated the dielectrophoretic activity of magnetic nanoparticles suspended in the presence of electric field, which is the behavior responsible for enhancing the dielectric characteristics of transformer oil, in order to examine how the activity differ in a transformer oil-based magnetic fluid.

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Theoretical Results for a Dipole Plasmonic Mode Based on a Forced Damped Harmonic Oscillator Model

  • Tongtong Hao;Quanshui Li
    • Current Optics and Photonics
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    • v.7 no.4
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    • pp.449-456
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    • 2023
  • The localized surface-plasmon resonance has drawn great attention, due to its unique optical properties. In this work a general theoretical description of the dipole mode is proposed, using the forced damped harmonic oscillator model of free charges in an ellipsoid. The restoring force and driving force are derived in the quasistatic approximation under general conditions. In this model, metal is regarded as composed of free charges and bound charges. The bound charges form the dielectric background which has a dielectric function. Those free charges undergo a collective motion in the dielectric background under the driving force. The response of free charges will not be included in the dielectric function like the Drude model. The extinction and scattering cross sections as well as the damping coefficient from our model are verified to be consistent with those based on the Drude model. We introduce size effects and modify the restoring and driving forces by adding the dynamic depolarization factor and the radiation damping term to the depolarization factor. This model provides an intuitive physical picture as well as a simple theoretical description of the dipole mode of the localized surface-plasmon resonance based on free-charge collective motion.

Active vibration control: considering effect of electric field on coefficients of PZT patches

  • Sharma, Sukesha;Vig, Renu;Kumar, Navin
    • Smart Structures and Systems
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    • v.16 no.6
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    • pp.1091-1105
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    • 2015
  • Piezoelectric coefficient and dielectric constant of PZT-5H vary with electric field. In this work, variations of these coefficients with electric field are included in finite element modelling of a cantilevered plate instrumented with piezoelectric patches. Finite element model is reduced using modal truncation and then converted into state-space. First three modal displacements and velocities are estimated using Kalman observer. Negative first modal velocity feedback is used to control the vibrations of the smart plate. Three cases are considered v.i.z case 1: in which variation of piezoelectric coefficient and dielectric constant with electric field is not considered in finite element model and not considered in Kalman observer, case 2: in which variation of piezoelectric coefficient and dielectric constant with electric field is considered in finite element model and not considered in Kalman observer and case 3: in which variation of piezoelectric coefficient and dielectric constant with electric field is considered in finite element model as well as in Kalman observer. Simulation results show that appreciable amount of change would appear if variation of piezoelectric coefficient and dielectric constant with r.m.s. value of electric field is considered.

Parametric modeling for the dielectric function of $Cd_{0.77}Mg_{0.23}Te$ alloy film

  • Ihn, Yong-Sub;Kim, Tae-Jung;Kim, Young-Dong
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.4
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    • pp.149-152
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    • 2002
  • We performed the modeling of the dielectric functions of C $d_{0.77}$M $g_{0.23}$Te by using parametric semiconductor model. Parametric model describes the analytic dielectric function as the summation of several energy-bounded Gaussian-broadened polynomials and provides a reasonably well parameterized function which can accurately reproduce the optical constants of semiconductor materials. We obtained the values of fitting parameters of the Mg composition 0.23 in the parametric model. From these parameters we could remove interference oscillations to obtain the dielectric function of C $d_{0.77}$M $g_{0.23}$Te alloy film for full 0.5-6.0 eV energy range.y range.

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Parasitics analysis of a grounded bondwire for low-cost plastic packaging of microwave devices (초고주파소자의 저가 플라스틱 실장을 위한 접지된 본딩와이어의 기생특성 해석)

  • 윤상기;이해영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.2
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    • pp.21-26
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    • 1997
  • The dielectric effects on the parasitics of bondwires buried in slightly-lossy dielectric materials hav been investigated over a wide frequency range using the method of moments with incorporation of ohmic and dielectric losses. The FR-4 composite is widely used as a basis material for PCB and plastic packages, because of it sinherent electricl and chemical stbility and low cost. The cole-cole model, which is representative complex permittivity model of epoxy polymers, has been applied to consider the dielectric effects in the MoM calculation. The prasitic impedance of a grounded bondwire in FR-4 composite is greatly increased due to the dielectric loading effect enhanced by the radiation at high frequencies. These calculation results will be helpful for designing and packaging of high-frequency low-cost IC's.

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Expansion of Thin-Film Transistors' Threshold Voltage Shift Model using Fractional Calculus (분수계 수학을 사용한 박막트랜지스터의 문턱전압 이동 모델 확장)

  • Taeho Jung
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.2
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    • pp.60-64
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    • 2024
  • The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

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Effects of transient thermo reflectance on the thermal responses of metal thin film exposed to ultrashort laser heating (극초단 펄스레이저 광이 입사된 금속박막의 열적반응 중 비정상반사율의 영향)

  • 박승호;국정진
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.11 no.4
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    • pp.528-536
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    • 1999
  • This work studies the effects of transient reflectance on the thermal responses of a metal(gold) thin-film during ultrashort laser heating. The heating process is calculated using the conventional conduction model (parabolic one-step: POS), parabolic two-step model (PTS) with and without variable properties, hyperbolic two-step model (HTS). Results from the HTS model are very similar to those from the PTS model, since the laser heating time in this study is greater than the electron relaxation time. PTS model with variable properties, however, results in totally different temperature profiles compared to those from POS models or calculation with constant properties. Transient reflectances are estimated from electron temperature distributions and based on the linear relationship between the electron temperature and complex dielectric constants. Reflectance of the front surface can be changed with respect to dielectric constants, while those of the rear surface remain unchanged.

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Improving Lifetime Prediction Modeling for SiON Dielectric nMOSFETs with Time-Dependent Dielectric Breakdown Degradation (SiON 절연층 nMOSFET의 Time Dependent Dielectric Breakdown 열화 수명 예측 모델링 개선)

  • Yeohyeok Yun
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.16 no.4
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    • pp.173-179
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    • 2023
  • This paper analyzes the time-dependent dielectric breakdown(TDDB) degradation mechanism for each stress region of Peri devices manufactured by 4th generation VNAND process, and presents a complementary lifetime prediction model that improves speed and accuracy in a wider reliability evaluation region compared to the conventional model presented. SiON dielectric nMOSFETs were measured 10 times each under 5 constant voltage stress(CVS) conditions. The analysis of stress-induced leakage current(SILC) confirmed the significance of the field-based degradation mechanism in the low electric field region and the current-based degradation mechanism in the high field region. Time-to-failure(TF) was extracted from Weibull distribution to ascertain the lifetime prediction limitations of the conventional E-model and 1/E-model, and a parallel complementary model including both electric field and current based degradation mechanisms was proposed by extracting and combining the thermal bond breakage rate constant(k) of each model. Finally, when predicting the lifetime of the measured TDDB data, the proposed complementary model predicts lifetime faster and more accurately, even in the wider electric field region, compared to the conventional E-model and 1/E-model.

Modeling of Dielectric Barrier Discharge Plasma Process for the Removal of Nitric Oxide (유전체 방전 플라즈마 공정에 의한 일산화질소 제거 공정 모델링)

  • Mok, Young-Sun
    • Journal of the Korean Society of Industry Convergence
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    • v.6 no.4
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    • pp.277-289
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    • 2003
  • This study proposes a mathematical model to characterize the removal of nitrogen oxides in a dielectric barrier discharge plasma process. As well as the reactions between nitrogen oxides, water vapor, oxygen and nitrogen, the model takes into account the effect of ethylene often used as a chemical additive to reduce the power consumption of the process on the removal of nitrogen oxides. Since the concentrations of the radicals concerned in the main reactions including O, OH, H and N should be calculated to predict the removal efficiency of nitrogen oxides, they were theoretically derived. The parameters affecting the removal of nitrogen oxides, such as initial concentration, discharge power, humidity, and ethylene concentration were experimentally evaluated, which were compared with the calculated results to verify the validity of the model proposed. The predicted concentrations of several byproducts formed in this process were also presented and discussed. The effects of several parameters mentioned above on the removal of nitrogen oxides were reasonable described by the proposed model.

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Efficient Simulation Method for Dielectric Barrier Discharge Load

  • Oleg, Kudryavtsev;Ahmed, Tarek;Nakaoka, Mutsuo
    • Journal of Power Electronics
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    • v.4 no.3
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    • pp.188-196
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    • 2004
  • The dielectric barrier discharge is recognized as one of the efficient methods of ultraviolet light generation and ozone production. As well, it is widely utilized for gaseous wastes neutralization and other technological processes in industry. This electrochemical reaction is electrically equivalent to a nonlinear capacitive load that represents some difficulties for designing the power supply. Therefore, a conventional power supply is designed for a drastically simplified model of the load and generally is not optimal. This paper presents a fast simulation approach for the nonlinear capacitive model representation of the dielectric barrier discharge load lamp. The main idea of the proposed method is to use analytical solutions of the differential state equations for the load and find the unknown initial conditions for the steady state by an optimization method. The derived expressions for the analytical solutions are rather complicated, however they greatly reduce the calculation time, which make sense when a deeper analysis is performed. This paper introduces the proposed simulation method and gives some examples of its application such as estimation of the load equivalent parameters and load matching conditions.