• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.92-95
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• 2000

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained at SCT15 thin film. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.747-749
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• 1992

In this study, $0.45Pb(Fe_{1/2}Nb_{1/2})O_3-(0.55-x)Pb(Fe_{2/3}W_{1/3})O_3-xPb(Mg_{1/3}Nb_{2/3})O_3(x=0.20, 0.25, 0.30)$ (x=0.20, 0.25, 0.30) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 950-990[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with the composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. To improve the dielectric loss, specimens doped with $MnO_2$, (0$\sim$2.0 [mol%] ) were fabricated and their dielectric properties were studied. With increasing the amount of $MnO_2$, dielectric constant was decreased and transition temperature was increased. Dielectric constant and dielectric loss of the 0.45PFN-0.30PFW-0.25PMN+$MnO_2$(1.0[mol.%]specimen(970[$^{\circ}C$]) had a good properties of 11,227, 1.3[%].

• 한국결정성장학회지
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• 제5권4호
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• pp.394-399
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• 1995

산소 팔면체의 tilting에 의한 초격자 구조를 하고 있는 $(Na_{0.5}Sr_{0.5})(Ti_{0.5}Nb_{0.5})O_{3}$의 온도 변화에 다른 유전 특성 및 X-선 회절에 의한 구조의 변화를 살펴보았다. 유전 손실 측정에서 관측되는 380 K 부근의 peak는 primitive cell이 정방정에서 입방정으로 변화함에 따라 생기는 peak임을 알 수 있었으며 이 때 유전율의 변화는 관측되지 않았다. 따라서 유전 손실이 재료 내의 구조적 변화를 인지하는데 유전율보다 민감하다는 것을 알 수 있었다. Primitive cell 이 입방정으로 변화한 후에도 산소 팔면체의 tilting에 의한 초격자 회절선은 여전히 관측되었으며 500 K 정도에서 완전히 사라짐을 알 수 있었다. 하지만 이때 유전 특성의 변화는 관측되지 않았다.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.852-858
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/$SiO_2$/Sisubstrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$ thin film showed the lowest value of 5.13$\times 10^{-7} A/{cm}^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}Tio_{3}$ thin films were 333, 0.0095, and 31.1%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.776-779
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• 2004

The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.

• 한국세라믹학회지
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• 제49권2호
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• pp.179-184
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• 2012

The size of various alumina ceramics used in semiconductor and display industry is required to increase with increase in wafer and panel size. In this research, large alumina ceramics were fabricated by uniaxial pressing, cold isostatic pressing and filter pressing with commercial powder and thereafter sintering at $1600^{\circ}C$ in gas furnace. The large alumina ceramics exhibited dense microstructure corresponding to 98.5% of theoretical density and 99.8% of high purity. The impurities and microstructural defects of the alumina were found to influence the resistance and dielectric properties. The volume resistances in these four aluminas were almost the same while the pure alumina was higher value. The dielectric constant, dielectric loss and dielectric strength of aluminas were placed within the range of 10.3~11.5, 0.018~0.036, and 10.1~12.4 kV/mm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.288-291
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• 2002

An alkoxide-based sol-gel method was used to fabricate $(Pb_{x},Sr_{1-x})$TiO3 (PST) thin films on a Pt/Ti/SiO2/Si substrate, and the dielectric properties of the PST thin films were investigated as a function of the Pb/Sr composition for use in tunable microwave device applications. The dielectric properties of the PST films were strongly dependent on the Pb/Sr ratio. The dielectric constant and dielectric loss of the PST films increased with increasing Pb content, and the figure of merit (FOM) reached a maximum value of 27.5 at a Pb/Sr ratio of 4:6. The tunability increased with increasing Pb content. The dielectric constant, loss factor, and tunability of PST (50/50) thin films were 404, 0.023, and 51.73%, respectively. From the result, the PST films with good dielectric properties are useful candidates for tunable microwave device.

• 폴리머
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• 제33권1호
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• pp.39-44
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• 2009

폴리페닐렌에테르[PPE, poly(phenylene ether)]를 기저수지로 사용하고, 가교제로 N,N'-m-phenylene-dimaleimide(PDMI), 난연제로 decabromodiphenylethane을 첨가하여 고분자 기판을 제작하였으며, 가교제와 난연제가 기판소재의 유전특성 등 물리적 특성에 미치는 영향을 고찰하였다. 개시제의 유무에 따른 PDMI의 열경화 특성을 DSC를 이용하여 분석하였으며, 이를 바탕으로 PPE-PDMI 테스트 조성을 설계하였다. 복합물 시트를 필름 코터로 성형한 후, 진공가압적층하여 테스트 기판을 제작하고, FDMI와 난연제의 함량에 따른 유전율, 유전손실, peel 강도, 납 내열성 및 난연성을 평가하였다. 유전율과 유전손실은 PDMI와 난연제의 함량에 따라 대체로 증가하는 경향을 나타내었으나, 납 내열성과 난연성은 개선된 결과를 나타내었다. Peel 강도는 PDMI가 10 wt% 이상 첨가되면 1 kN/m 이상의 높은 값을 나타내었지만, 난연제의 첨가량에 따라서는 소폭 감소하는 경향을 보였다. Gel content 측정결과로부터, PPE-PDMI의 반응 메카니즘은 semi-IPN 구조의 형성보다는 PPE와 PDMI의 crosslinking에 의한 망상구조 형성에 더 가까운 것으로 판단되었다. 최종적으로 1 GHz에서 유전율이 2.52$\sim$2.65, 유전손실이 0.002 미만으로 작은 고주파 대역용 고분자 복합체 기판소재를 얻을 수 있었다.