• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.898-901
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• 2006

To fabricate mono layer green sheet (MLGS) of transparent dielectric for PDP front panel, dispersion of transparent dielectric slurry and various properties of green sheets were examined as a function of amount and kinds of organic additives. Sedimentation height and viscosity of slurry were measured to determine proper types and amount of dispersant in non-aqueous system transparent dielectric slurry. Many MLGS having various ratios of the transparent dielectric glass frit, binder and plasticizer were fabricated. Finally we got the transparent dielectric layer of high transparency and free from residual pore might be remained in the gap between the electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.63-65
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• 1989

Piezoelectric BaTiO$_3$-polymer composite were investigated for dielectric and piezoelectric properties with the barium titanate active particle size. Under the condition of the same density and ceramic volume ratio of composite, the dielectric and piezoelectric constant of composite are increasing as the ceramic particle size in composite are increasing. The surface layer model was quoted to explain these phenomena in our system and experimentally confirmed. The connectivity parameter of modified cube model of composite was calculated from the dielectric constant variation as their particle size. The connectivity parameter X and Y were 77.8% and 98.9% respectively. It means that the barium titanate particle distribution in composite nearly approach to the parallel mode. It was experimentally confirmed that the surface layer has low dielectric and nonferroelectric properties. Dielectric constant and thickness of surface layer were calculated from the equivalent circuit of composite.

• Interaction and multiscale mechanics
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• v.3 no.2
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• pp.157-171
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• 2010

In this paper, a theoretical method has been developed for the electric double layer interaction under condition of the variable dielectric permittivity of water. Using Poisson-Boltzmann equation (PBE), for one plate and two plates having similar or dissimilar constant charge or constant potential, we have investigated the electric double layer potential, its gradient and the disjoining pressure as well as the effect of variation of dielectric permittivity on these parameters. It has been assumed that plates are separated by a specific distance and contain a liquid solution in between. It is shown that reduction of the dielectric permittivity near the interfaces results in compression of electric double layers and affects the potential and its gradient which leads to a decreased electrostatic repulsion. In addition, it is shown that variation of dielectric permittivity in the case of higher electrolyte concentration, leads to a greater change in potential distribution between two plates.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.1
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• pp.77-82
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• 2020

In this paper, E-polarized electromagnetic scattering problems by a conductive strip grating between a double dielectric layer are analyzed by applying the FGMM(Fourier-Galerkin moment method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, and the conductive boundary condition is applied to analysis of the conductive strip. The numerical results for the normalized reflected and transmitted power are analyzed by according as the width and spacing of conductive strip, the relative permittivity and thickness of the double dielectric layers, and incident angles. Generally, as the value of the dielectric constant of the double dielectric layer increases, the reflected power increases and the transmitted power decreases, respectively. As the dielectric constant of the double dielectric layer increases, the current density induced in the strip center increases. The numerical results for the presented structure of this paper are shown in good agreement compared to those of the existing papers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.207-207
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• 2008

Modern industry has focused on processing that produce low- loss dielectric substrates used complex micron-sized devices using tick film technologies such as tape casting and slip casting. However, these processes have inherent disadvantages fabricating high density interconnect with embedded passives for high speed communication electronic devices. Here, we have successfully fabricated porous alumina dielectric layer infiltrated with polymer solution by using inkjet printing process. Alumina suspensions were formulated as dielectric ink that were optimized to use in inkjet process. The layer was confirmed by field emission scanning electron microscope (FE-SEM) for measuring microstructure and volume fraction. In addition, the reaction kinetics and electrical properties were characterized by FT-IR and the impedance analyzer. The volume fraction of alumina in porous dielectric alumina layer is around 70% much higher than that in the conventional process. Furthermore, after infiltration on the dielectric layer using polymer resins such as cyanate ester. Excellent Q factors of the dielectric is about 200 when confirmed by impedance analyzer without any high temperature process.

• Journal of Advanced Navigation Technology
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• v.16 no.6
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• pp.1038-1043
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• 2012

In this work, a high tunable capacitor using a multi-layer dielectric of BZN/BST/BZN is designed and characterized for reconfigurable RF applications. By utilizing a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film, a multi-layer dielectric of BZN/BST/BZN obtained a tunability of 47 % and $tan{\delta}$ of 0.005. The fabricated tunable capacitor on a quartz wafer using this multi-layer dielectric achieved a Q-factor of 10 and tunability of 60 % at 800 MHz and 15 V. Its size is $327{\times}642{\mu}m2$.

• Journal of Power System Engineering
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• v.17 no.6
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• pp.63-72
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• 2013

The main purpose of this study is to analyze the collection characteristics of multi-layer multi-stage porous plate system with ionizer and dielectric-substance experimentally. The experiment is carried out to analyze the characteristics of pressure drop and collection efficiency for the present system with experimental parameters such as applied voltage, inlet velocity, stage number and inlet particle concentration, etc. In results, for multi-layer multi-stage porous plate system of inflow type, at 5 stage and $v_{in}$=2.58 m/s, the pressure drop becomes lower 15 $mmH_2O$ as 95 $mmH_2O$ than that of non-inflow type system. It is estimated that for the present system with ionizer and dielectric-substance, the collection efficiency represents 98.5% showing higher 5.2% comparing to that of multi-layer multi-stage porous plate system without ionizer and dielectric-substance at 5 stage, $v_{in}$=2.58 m/s and inlet concentration $3g/m^3$(fly ash).

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1266-1268
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• 2005

The influence of the grooved dielectric layer on discharge and luminous characteristics has been investigated for various depths of the groove to achieve a high luminance efficiency AC-PDP operated at a lower voltage. We use the voltagethreshold curve technique and address delay jitters to explain the discharge characteristics. It shows that the surface discharge voltage rely on the depth of the grooved dielectric layer. Vertical discharge voltage remains almost the same as the groove depth increases. The influence of the grooved dielectric layer on discharge and luminous characteristics has been investigated for various depths of the groove to achieve a high luminance efficiency AC-PDP operated at a lower voltage. We use the voltagethreshold curve technique and address delay jitters to explain the discharge characteristics. It shows that the surface discharge voltage rely on the depth of the grooved dielectric layer. Vertical discharge voltage remains almost the same as the groove depth increases.