• 전자공학회논문지D
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• 제34D권6호
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.898-901
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• 2006

To fabricate mono layer green sheet (MLGS) of transparent dielectric for PDP front panel, dispersion of transparent dielectric slurry and various properties of green sheets were examined as a function of amount and kinds of organic additives. Sedimentation height and viscosity of slurry were measured to determine proper types and amount of dispersant in non-aqueous system transparent dielectric slurry. Many MLGS having various ratios of the transparent dielectric glass frit, binder and plasticizer were fabricated. Finally we got the transparent dielectric layer of high transparency and free from residual pore might be remained in the gap between the electrodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.63-65
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• 1989

Piezoelectric BaTiO$_3$-polymer composite were investigated for dielectric and piezoelectric properties with the barium titanate active particle size. Under the condition of the same density and ceramic volume ratio of composite, the dielectric and piezoelectric constant of composite are increasing as the ceramic particle size in composite are increasing. The surface layer model was quoted to explain these phenomena in our system and experimentally confirmed. The connectivity parameter of modified cube model of composite was calculated from the dielectric constant variation as their particle size. The connectivity parameter X and Y were 77.8% and 98.9% respectively. It means that the barium titanate particle distribution in composite nearly approach to the parallel mode. It was experimentally confirmed that the surface layer has low dielectric and nonferroelectric properties. Dielectric constant and thickness of surface layer were calculated from the equivalent circuit of composite.

• Interaction and multiscale mechanics
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• 제3권2호
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• pp.157-171
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• 2010

In this paper, a theoretical method has been developed for the electric double layer interaction under condition of the variable dielectric permittivity of water. Using Poisson-Boltzmann equation (PBE), for one plate and two plates having similar or dissimilar constant charge or constant potential, we have investigated the electric double layer potential, its gradient and the disjoining pressure as well as the effect of variation of dielectric permittivity on these parameters. It has been assumed that plates are separated by a specific distance and contain a liquid solution in between. It is shown that reduction of the dielectric permittivity near the interfaces results in compression of electric double layers and affects the potential and its gradient which leads to a decreased electrostatic repulsion. In addition, it is shown that variation of dielectric permittivity in the case of higher electrolyte concentration, leads to a greater change in potential distribution between two plates.

• 한국인터넷방송통신학회논문지
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• 제20권1호
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• pp.77-82
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• 2020

본 논문에서는 2중 유전체층 사이의 완전도체띠 격자구조에 의한 E-분극 전자파 산란 문제는 전자파 수치해석 방법으로 알려진 FGMM(Fourier-Galerkin moment method)를 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고, 도체띠의 해석을 위해 완전도체 경계조건을 적용하였다. 도체띠의 폭과 주기, 2중 유전층 사이의 비유전율과 두께 및 입사각에 대해 정규화된 반사전력과 투과전력을 계산하였다. 전반적으로 2중 유전체 층의 비유전율이 증가할수록 반사전력은 증가하였으며, 상대적으로 투과전력은 감소하였다. 2중 유전체 층의 비유전율이 증가할수록 도체띠에 유도되는 전류밀도는 스트립 중앙에서 증가하였다. 본 논문의 제안된 구조에 대한 수치결과들은 기존 논문의 수치해석 결과들과 비교하여 매우 잘 일치하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.207-207
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• 2008

Modern industry has focused on processing that produce low- loss dielectric substrates used complex micron-sized devices using tick film technologies such as tape casting and slip casting. However, these processes have inherent disadvantages fabricating high density interconnect with embedded passives for high speed communication electronic devices. Here, we have successfully fabricated porous alumina dielectric layer infiltrated with polymer solution by using inkjet printing process. Alumina suspensions were formulated as dielectric ink that were optimized to use in inkjet process. The layer was confirmed by field emission scanning electron microscope (FE-SEM) for measuring microstructure and volume fraction. In addition, the reaction kinetics and electrical properties were characterized by FT-IR and the impedance analyzer. The volume fraction of alumina in porous dielectric alumina layer is around 70% much higher than that in the conventional process. Furthermore, after infiltration on the dielectric layer using polymer resins such as cyanate ester. Excellent Q factors of the dielectric is about 200 when confirmed by impedance analyzer without any high temperature process.

• 한국항행학회논문지
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• 제16권6호
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• pp.1038-1043
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• 2012

본 연구에서는 재구성 RF 회로 설계 응용을 위해 BZN/BST/BZN 다층 유전체를 이용한 고-가변 커패시터를 설계 및 그 특성을 측정하였다. 고-가변 특성의 BST계 강유전체와 저-손실 특성의 BZN계 상유전체를 이용하여 47%의 가변성과 0.005의 $tan{\delta}$ 값을 갖는 저-손실 고-가변 BZN/BST/BZN 다층 유전체를 제작하였다. 이 다층 유전체를 이용하여 quartz 기판 위에 $327{\times}642{\mu}m2$ 크기로 제작된 가변 커패시터 칩은 15 V의 인가전압과 800 MHz 주파수에서 Q-factor가 10이고 60 %의 가변율을 달성하였다.

• 동력기계공학회지
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• 제17권6호
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• pp.63-72
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• 2013

The main purpose of this study is to analyze the collection characteristics of multi-layer multi-stage porous plate system with ionizer and dielectric-substance experimentally. The experiment is carried out to analyze the characteristics of pressure drop and collection efficiency for the present system with experimental parameters such as applied voltage, inlet velocity, stage number and inlet particle concentration, etc. In results, for multi-layer multi-stage porous plate system of inflow type, at 5 stage and $v_{in}$=2.58 m/s, the pressure drop becomes lower 15 $mmH_2O$ as 95 $mmH_2O$ than that of non-inflow type system. It is estimated that for the present system with ionizer and dielectric-substance, the collection efficiency represents 98.5% showing higher 5.2% comparing to that of multi-layer multi-stage porous plate system without ionizer and dielectric-substance at 5 stage, $v_{in}$=2.58 m/s and inlet concentration $3g/m^3$(fly ash).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1266-1268
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• 2005

The influence of the grooved dielectric layer on discharge and luminous characteristics has been investigated for various depths of the groove to achieve a high luminance efficiency AC-PDP operated at a lower voltage. We use the voltagethreshold curve technique and address delay jitters to explain the discharge characteristics. It shows that the surface discharge voltage rely on the depth of the grooved dielectric layer. Vertical discharge voltage remains almost the same as the groove depth increases. The influence of the grooved dielectric layer on discharge and luminous characteristics has been investigated for various depths of the groove to achieve a high luminance efficiency AC-PDP operated at a lower voltage. We use the voltagethreshold curve technique and address delay jitters to explain the discharge characteristics. It shows that the surface discharge voltage rely on the depth of the grooved dielectric layer. Vertical discharge voltage remains almost the same as the groove depth increases.