• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.2
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• pp.63-68
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• 2009

We study on the transient response in non-uniform microstrip lines with optically controlled microwave pulses. The transient response of the microwave pulses in plasma layer has been evaluated by reflection function of dielectric microstrip lines. The variation of characteristic response in plasma layer with localized pulses has been evaluated analytically. Reflection the change of the reflection amplitude has been observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.44-47
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric($ZrO_2$) in water was simulated. The reactor was made up of the spherical dielectric that is diameter : 3.0[mm], $ZrO_2(\varepsilon_r:10)$ and one glass plate of thickness(2[mm]), $\varepsilon_r$(10) as electrode. The discharge gap was 8[mm]. To get more strong electric field, the dielectric constant should be higher comparatively. Using the spherical dielectric for water discharge in dielectric tube, the location of equipotential line was shifting from the interior to the exterior. At real water discharge experimental, ozone was measured higher dissolved ozone in water at condition of water rate(l[l/min]) and injector than condition of non-injector or 2~3[l/min].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.40-43
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric(glass) in water was simulated. The reactor was made up of the spherical dielectric that is diameter : 3.0[mm], glass(${\varepsilon}_r$:5) and one glass plate of thickness(2[mm]), ${\varepsilon}_r$(5) as electrode. The discharge gap was 8[mm). Toget more strong electric field, the dielectric constant should be higher comparatively. Using the spherical dielectric for water discharge in dielectric tube, the location of equipotential line was shifting from the interior to the exterior. At real water discharge experimental, $H_2O_2$ was measured higher generated $H_2O_2$ in water at condition of water rate(1[l/min]) and injector than condition of non-injector or 2-3[l/min])

• International Journal of Highway Engineering
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• v.18 no.4
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• pp.55-61
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• 2016

PURPOSES : The objective of this study was to determine the relationship between the dielectric characteristics of asphalt mixtures and the air voids present in them using ground penetrating radar (GPR) testing. METHODS : To measure the dielectric properties of the asphalt mixtures, the reflection coefficient method and the approach based on the actual thickness of the asphalt layer were used. An air-couple-type GPR antenna with a center frequency of 1 GHz was used to measure the time for reflection from the asphalt/base layer interface. A piece of aluminum foil was placed at the interface to be able to determine the reflection time of the GPR signal with accuracy. An asphalt pavement testbed was constructed, and asphalt mixtures with different compaction numbers were tested. After the GPR tests, the asphalt samples were cored and their thicknesses and number of air voids were measured in the laboratory. RESULTS : It was found the dielectric constant of asphalt mixtures tends to decrease with an increase in the number of air voids. The dielectric constant values estimated from the reflection coefficient method exhibited a slight correlation to the number of air voids. However, the dielectric constant values measured using the approach based on the actual asphalt layer thickness were closely related to the asphalt mixture density. Based on these results, a regression equation to determine the number of air voids in asphalt mixtures using the GPR test method was proposed. CONCLUSIONS : It was concluded that the number of air voids in an asphalt mixture can be calculated based on the dielectric constant of the mixture as determined by GPR testing. It was also found that the number of air voids was exponentially related to the dielectric constant, with the coefficient of determination, $R^2$, being 0.74. These results suggest that the dielectric constant as determined by GPR testing can be used to improve the construction quality and maintenance of asphalt pavements.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1566-1571
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• 2009

The discharge electrodes in ac PDP are coated with dielectric layer, and transparent MgO thin films are deposited on the dielectric layer. The main role of the MgO thin films in ac PDP is to protect the dielectric layer from sputtering by ion bombardment in the glow-discharge plasma. An additional important role of the MgO thin film is the high secondary electron emission coefficient which leads the low firing voltage and low cost of the PDP. In this paper, we investigated the relations of the crystal orientation about deposition thickness, deposition rate, temperature of substrate, and distance between the MgO tablet and the substrate. Additionally, we investigated the discharge characteristics of the AC PDP using nano-powder MgO tablet

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.431-434
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• 2011

In this paper, bandwidth enhanced design of dielectric resonator antenna fabricated in multi-layer substrate is introduced. The proposed dielectric resonator antenna is operating with fundamental TE101 mode and higher-order TM111 mode. Each resonance frequency is dependent on resonator dimensions. As increasing the height of radiating aperture, the higher-order TM111 mode resonance frequency approach the fundamental TE101 mode resonance frequency and the antenna bandwidth increase by double resonance. Three different aperture height size antennas that operated at 7GHz are fabricated in FR4 multi-layer substrate. Measured 10 dB matching bandwidth is 8 percent for single resonace antenna and 18 percent for double resonance antenna.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.281-284
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• 1999

In this paper, the electrical conduction, breakdown strength and dielectric properties were investigated in the interfaces of PET films. The volume resistivity and breakdown strength were decreased; especially the specimens with semiconductive layer showed the lowest breakdown strength. This decrease of electrical properties was appeared by increasing charge density in inhomogeneous layer of PET. The dielectric properties of PET did not show significant difference with PET/PET but the films with semiconductive interface layer showed the increase in capacitance and $tan\delta$ was affected by the PET rather than semiconductive layer. It is assumed that the variation of $tan\delta$ was affected by the dielectric polarization and the leakage current(charge).

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.26.2-26.2
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.23.2-23.2
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.