• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.63-67
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• 2016

In this paper, we present an indirect method of elastic modulus measurement for various lamination layers formed on polymer-based compliant substrates. Although the elastic modulus of every component is crucial for mechanically reliable microelectronic devices, it is difficult to accurately measure the film properties because the lamination layers are hardly detached from the substrate. In order to resolve the problem, 3-point bending test is conducted with a film-substrate specimen and area transformation rule is applied to the cross-sectional area of the film region. With known substrate modulus, a modulus ratio between the film and the substrate is calculated using bending stiffness of the multilayered specimen obtained from the 3-point bending test. This method is verified using electroplated copper specimens with two types of film-substrate structure; double-sided film and single sided film. Also, common dielectric layers, prepreg (PPG) and dry film solder resist (DF SR), are measured with the double-sided specimen type. The results of copper (110.3 GPa), PPG (22.3 GPa), DF SR (5.0 GPa) were measured with high precision.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1245-1251
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• 1999

Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.97-105
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• 2020

Recently, as the data speed and operating frequencies of Ethernet keeps increasing, electro magnetic interference (EMI) also becomes increasing. The generation of such EMI will cause malfunction of near electronic devices. In this study, EMI filters were applied to reduce the EMI generated by DC-DC SMPS (switching mode power supply), which is the main cause of EMI generation of Ethernet switch. As the EMI filter, MLCCs with excellent withstanding voltage characteristics were used, which had advantages in miniaturization and mass production. Two types of EMI MLCC filters were used, which are X-capacitor and X, Y-capacitor. X-capacitor was composed of 2 MLCCs with 10 nF and 100 nF capacity and 1 Mylar capacitor. Y-capacitor was consisted of 6 MLCCs with a capacity of 27 nF. When only X-capacitor was applied as EMI filter, the conductive EMI field strength exceeded the allowable limit in frequency range of 150 kHz ~ 30 MHz. The radiative EMI also showed high EMI strength and very small allowable margin at the specific frequencies. When the X and Y-capacitors were applied, the conductive EMI was greatly reduced, and the radiation EMI was also found to have sufficient margin. In addition, X, Y-capacitors showed very high insulation resistance and withstanding resistance performances. In conclusion, EMI X, Y-capacitors using MLCCs reduced the EMI noise effectively and showed excellent electrical reliability.

• Journal of the Korea institute for structural maintenance and inspection
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• v.26 no.3
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• pp.39-47
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• 2022

In this paper, we proposed a thickness measurement method of concrete slab using GPR, and the verification of the suggested algorithm was carried out through real-scale experiment. The thickness measurement algorithm developed in this study is to set the relative dielectric constant based on the unique shape of parabola, and time series data can be converted to thickness information. GPR scanning were conducted in four types of slab structure for noise reduction, including finishing mortar, autoclaved lightweight concrete, and noise damping layer. The thickness obtained by GPR was compared with Boring data, and the average error was 1.95 mm. In order to investigate the effect of finishing materials on the slab, additional three types of finishing materials were placed, and the following average error was 1.70 mm. In addition, sampling interval from device, the effect of radius on the shape of parabola, and Boring error were comprehensively discussed. Based on the experimental verification, GPR scanning and the suggested algorithm have a great potential that they can be applied to the thickness measurement of finishing mortar from concrete slab with high accuracy.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.154-162
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• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.