• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.309-315
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• 2004

In the pressure sensor, about below 20 kPa, the center boss diaphragm structure is generally used, but it is hard to obtain the high sensitivity because the center boss structure is limited at the thickness and size of diaphragm with chip size. Therefore, this paper suggests that the Center boss structure has surface etched diaphragm using a stress concentration to improve the sensitivity. We carried out the simulation and fabrication applied new diaphragm design. In the result, the sensitivity is improved to 60% without the change of non-linearity (0.14%FS). So, the Center boss of surface etched diaphragm can be applied for the high sensitivity in the low-pressure sensor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.18-24
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• 2011

This paper presents that the yield strength of the pressure sensor with a double boss diaphragm structure can be improved as the grooves are formed at the corner of the diaphragm bridge. Generally the boss structure is widely used for the low-pressure sensor, of which the sensitivity is not enough in case of the small diaphragm size limited by a chip size constraint. The double boss structure pressure sensor exhibits a great sensitivity, but suffers from the low yield strength problem due to the high stress occurred at the corner of the diaphragm bridge to be limited in the operating range. ANSYS simulation is performed by changing the length of the groove from 0.5${\mu}m$ to 10${\mu}m$ at the corner of the diaphragm bridge of the double boss structure pressure sensor. The maximum stress is analyzed at the corner of the diaphragm bridge, the edge of the diaphragm bridge, and the position of the piezoresistive sensor. Consequently, in case the length of the groove from the edge of the diaphragm is 6${\mu}m$ or greater, the stress occurred in the corner of the bridge is less than the stress acting on a piezoresistive element.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.7
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• pp.82-88
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• 1993

This paper describes fabrication of relative type capacitive pressure sensor to be in great demand for many fields. The fabricated sensor consists of two parts` a sensing diaphragm and a pyrox glass cover. The sensor size is 4.5${\times}3.4mm$^{2})$ and 400$\mu$m thick. To improve the nonlinearity, this sensor is designed a rectangular silicon diaphragm with a center boss structure, and in order to improve the temperature characteristics of the sensor in a packaging process, the sensing element is mounted on the pyrex glass support. Some suggestions toward the design and fabrication of improved sensors have been presented. The zero pressure capacitance, Co of sensor is 26.57pF, and the change of capacitance, ${\Delta}$C is 1.55pF from 0Kgf/Cm$^{2}$ to 1Kgf/Cm$^{2}$ at room temperature. The nonlinearity of the sensor output with center boss diaphragm is 1.29%F.S., and thermal zero shift and thermal sensitivity shift is less than 1.43%F.S./$^{\circ}C$and 0.14% F.S./$^{\circ}C$, respectively.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.1-8
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• 1996

In this paper, We have designed silicon pressure sensor with center-bossed diaphragm which improving sensitivity and linearity by reducing diaphragm deflection. Designed center-bossed pressure sensor showed maximum deflection of $0.125{\mu}m$, maximum stress of $2.24{\times}10^7 Pa$ and sensitivity of 27.67 mV/V.psii. As a result, diaphragm deflection was reduced to 1/160 that of diaphragm thickness and 1/35 that of square diaphragm. Also, sensitivity was increased 19 times compared to square diaphragm.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.790-793
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• 2005

In these days, the piezoresistive material has been applied to various sensors in order to measure the change of physical quantities. But the relationship between the sensitivity of a sensor and the position and size of piezoresistor has rarely been studied. Therefore, this paper was focused on the effect of residual stress induced in piezoresistor on the distribution of resistance change ratio and supposed the feasible position of piezoresistor. The resulting are following; The tensile residual stress in the vicinity of piezoresistor decreased the value of resistance change ratio and could not effect on all the area of diaphragm but local area around the piezoresistor. Also, the piezoresistor in the diaphragm type pressure sensor with boss should fabricate in the edge of boss in order to increase the sensitivity of pressure sensor.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.321-326
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• 2013

In this paper, the usability of a compact silicon strain gauge load cell in a weighting disdrometer for measuring the impact load of a falling raindrop is introduced for application in a multi-meteorological sensor. The silicon strain gauge load cell is based on the piezoresistive effect, which has a high linearity output from the momentum of the raindrop and the simplicity of signal processing. The weighting disdrometer shows a high sensitivity of 7.8 mV/g in static load measurement when the diaphragm thickness of the load cell is $250{\mu}m$.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.29 no.1
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• pp.405-410
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• 2005

In these days, the piezoresistive material has been applied to various sensors in order to measure the change of physical quantities. But the relationship between the sensitivity of a sensor and the position and size of piezoresistor has rarely been studied. Therefore, this paper was focused on the distribution of the resistance change ratio on the diaphragm and bridge surface where piezoresistor would be formed, and proposed the proper size and position of piezoresistor with which the sensitivity of sensor was increased. As the width of mass and boss was increased, the distance between piezoresistors was closed and the maximum value of resistance change ratio was decreased by the increase of the structure stiffness.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1381-1384
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• 2005

In these days, the piezoresistive material has been applied to various sensors in order to measure the change of physical quantities. But the relationship between the sensitivity of a sensor and the position and size of piezoresistor has rarely been studied. Therefore, this paper was focused on the distribution of the resistance change ratio on the diaphragm and bridge surface where piezoresistor would be formed, and proposed the proper size and position of piezoresistor with which the sensitivity of sensor was increased. As the width of mass and boss was increased, the distance between piezoresistors was closed and the maximum value of resistance change ratio was decreased by the increase of the structure stiffness. And according to the increment of seismic mass size, the value of resistance change ratio is decreased by increase of the structure stiffness. Y directional piezoresistor is formed in the position of $100\mu{m}\;apart\;from\;cantilever\;edge\;and\;length\;of\;that\;is\;800\mu{m}$.