• Proceedings of the KSR Conference
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• 2007.11a
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• pp.1438-1444
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• 2007

Standard Gate Turn Off (GTO) Thyristor drive technology results in inhomogeneous turn-on and turn-off transients which in turn needs costly dv/dt and di/dt snubber circuits. Added to this GTO is bulky in size, needs external cooling, slower switching time etc. The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO technology. Indian Railway has developed first IGBT based traction converter and was commissioned in November 2006. Some of the supremacy of IGBT are smaller in size, no external cooling is required, built in power supply which enhances reliability, lower switching losses which leads to higher efficiency, reduced gate drive, high frequency operation in real time etc. These advantages are highlighted along with IGBT Traction system in operation.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.620-624
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• 1998

Higher operating frequency provides rising output power from modern power electronics devices. Nevertheless, the switch-mode operation results in EMI which is produced due to large di/dt and/or dv/dt. The methods to reduce EMI are the use of classic and expensive input filters or the addition of the active filter into the main circuits. In this paper, by using the randomized PWM the EMI effect can be reduced and implementation of the proposed control scheme into the forward converter can improve the harmonic spectrum as well

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.300-303
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• 2003

The design rule for 8.5kV LTT was discussed here. An inherent integrated breakover diode (BOD) for self -protection function and multi-amplified gate (AG) for improved di/dt capability of LTT was introduced in principle. The trade-off between light triggering input source and high dV/dt limitation has been treated via narrow grooved P-base for gate design. Key process technology for LTT was given, too.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.237-239
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• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• Proceedings of the KIEE Conference
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• 2003.04a
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• pp.273-275
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• 2003

SMPS는 신속한 스위칭에 의하여 높은 $d{\upsilon}$/dt 및 di/dt 특성을 가지며, 이러한 스위칭 특성으로 SMPS에서 발생하는 EMI 노이즈는 기기 내부 및 외부에 간섭을 일으킨다. 일반적으로 전자파 이미션은 전도성 이미션 및 방사성 이 미션으로 분류되며. 전도성 이미션은 공통모드와 차동모드로 구분한다. 최근 노이즈전류를 평형시킴으로써 공통모드 노이즈를 감소시키는 방법이 연구되었다. 이 방법은 공통모드 노이즈가 시스템 불평형의 결과라는 측면을 고려한 것이며. 노이즈 전류의 평형상태에서 컨버터를 동작시키면 공통모드 노이즈가 크게 줄어들 수 있음을 보여준다. 본 논문에서는 절연형 SMPS에서 노이즈 전류의 평형기법을 이용하여 SMPS의 1차 및 2차 측의 노드 확장에 따른 노이즈 감소를 분석한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.106-108
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• 2002

SMPS는 스위칭을 통해 전력을 변환하므로 높은 dv/dt 및 di/dt 특성을 갖게 된다. 이러한 스위칭특성으로 인해 발생하는 EMI (Electromagnetic Interference) 노이즈는 기기 내부 또는 외부에 간섭을 일으킨다. 미국의 FCC (Federal Communications Commission) 및 유럽 의 CISPR(International Special Committee on Radio Interference) 등의 규정을 만족시키기 위해서 전도성 노이즈에 대한 충분한 이해와 해석이 필요하다. 본 연구는 SMPS에서의 EMI/EMC 대책 구현에 앞서, 전도성노이즈의 기본개념 및 발생/결합 경로를 분석하고 실제로 노이즈를 측정한다. 측정을 위해 Boost 컨버터가 제작/사용된다.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.357-358
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• 2015

This paper provides a comparison of power converter loss and thermal description for voltage source and current source type 5MW-class medium voltage topologies of wind turbines. Neutral-point clamped three-level converter is adopted for voltage source type topology while two-level converter is employed for current source type topology considering the popularity in the industry. In order to match the required voltage level of 4160V with the same switching device of IGCT as in voltage source converter, two active switches are connected in series for the case of current source converter. The loss analysis is confirmed through PLECS simulations. In addition, the loss factors due to di/dt and dv/dt snubber and ac input filter are presented. The comparison result shows that VSC-based wind turbine system has a higher efficiency than that of CSC under the rated operating conditions.

• Korean Journal of Animal Reproduction
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• v.27 no.2
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• pp.179-185
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• 2003

To determine whether the diphtheria toxin-A (DT) gene disrupts development of thymocytes in transgenic animal, the DT-A gene was used for the production of transgenic mice directed by proximal Ick promoter sequences. Two transgenic founder mice that contained several copies of transgene were produced by DNA microinjection and integration of transgene in transgenic mice was confirmed by PCR and Southern blotting analysis. Transgenic $F_1$ and $F_2$ mice were produced by outbreeding of founder and $F_1$ mice to investigate expression of transgene and phenotypes in transgneic mice. Expression of the diphtheria toxin gene was confirmed in thymus, spleen and liver of transgenic mice by RT-PCR. In circulating blood of transgenic mice, lower number of circulating white blood cells and platelets were observed compared with that of normal mice. In addition, transgneic mice had reduced number of circulating peripheral T-cells analyzed by FACS with anti-CD3 antibody. The data in these transgenic mice indicate that DT gene can play a disruptive role in developing thymocytes of transgenic mice resulted in lower number of T-cells that can be applicable to a wide range of tissues in other animals.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.1857-1859
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• 1998

This paper proposes a circuit technique that reduces losses cauased by reverse-recovery characteristics of the diode in converters. In high voltage, high power, Reverse recovery characteristics of the diode gives large stresses to switching devices. To solve the problem, we propose a circuit with active snubber between diode and switch. By controling di/dt rate of thr diode, the proposed technique reduces the losses and the stresses of switching devices.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.295-296
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• 2013

본 논문에서는 새로운 전류원 공진형 컨버터를 제안한다. 제안한 컨버터는 입력전류 리플이 작으며 모든 스위치와 다이오드의 ZCS 턴온/턴오프를 성취하며 턴온/턴오프 전류의 di/dt가 0이다. 또한, 인터리빙 시 출력전류 리플을 이론적으로 완전히 제거할 수 있다. 제안하는 컨버터의 동작원리를 제시하고 실험을 통하여 타당성을 검증하였다.