• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.625-629
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• 2016

Electrical and optical properties of the AC voltage driven organic light-emitting diodes were investigated by measuring the electroluminescence of the device. Device structure of ITO(170 nm)/TPD(40 nm)/Alq3(60 nm)/LiF(0.5 nm)/Al(100 nm) was manufactured using a thermal evaporation. Sinusoidal and square-type AC voltage was applied to the device using a function generator. Amplitude of the applied voltage was 9.0 V, and a frequency was varied from 50 Hz to 50 kHz. Electroluminescence out of the device was measured in a Si photodetector simultaneously with the applied voltage together. An intensity and a delayed residual luminescence from the device were depended on the frequency of the sinusoidal voltage. It is thought to be due to a contribution of the capacitive nature in the equivalent circuit of the device. An electron mobility was estimated using a time constant obtained from the luminescence of the device driven by the square-type AC voltage.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.311-316
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• 2001

The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. At devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane, and also newEPI MOSFET for improved structure to weak point of LDD structure by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impart ionization, electric field and I-V curve with those of lightly-doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.171-176
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• 2005

In the information storage development, the trend of the storage device is to increase the recording density. Among such an effort, near-field probe recording is spotlighted as a method of high increasing recording density. For the successfully embodiment of storage device, the actuating mechanism of near-field probe is essentially designed. In this paper, we suggest the slider similar with conventional HDDs and design the slider using near- field probe for the purpose of applying the slider in order to control gap between probe and media. The most important object of slider design is to guarantee the flying ability and stability. For achievement of these design objects, we perform two step of optimal design process. The media is mod! eled as random displacement, which is only considered roughness of disk surface. The design slider is analyzed with dynamic state in assumed media. At this process, the optimal model is confirmed to stable flying stability.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.1192-1195
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• 2017

This paper describes the heat resistance characteristics of the imaging device installed in behind the engine due to monitoring the engine condition, and this paper includes the introduction and development of the imaging probe. Because the imaging device which is at the rear end of the engine is exposed to a high temperature and high pressure, the stability of the device should be secured by changing the device shape and supplying cooling water. The imaging probe in ADD engine test facility is installed at the rear end of the engine, and it is designed by reflecting the heat resistance characteristics to ensure the stability of the device.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.9
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• pp.614-619
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• 2010

Recently, a problem related to the thermal management in portable electronic and telecommunication devices is becoming issued. That is due to the trend of a slimness of the devices, so it is not easy to find the optimal thermal management solution for the devices. From now on, a pressed circular type cooling device has been mainly used, however the cooling device with thin thickness is becoming needed by the inner space constraint of the applications. In the present study, the silicon flat plate type cooling device with the separated vapor and liquid flow path was designed and fabricated. The normal isothermal characteristics created by vapor-liquid phase change was confirmed through the experimental study. The cooling device with 70 mm of total length showed 6.8 W of the heat transfer rate within the range of $4{\sim}5^{\circ}C/W$ of thermal resistance. In the future, it will be possible to develop the commercialized cooling device by revising the fabrication process and enhancing the thermal performance of the silicon and glass cooling device.

• Korean Journal of Clinical Pharmacy
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• v.19 no.1
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• pp.65-68
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• 2009

Disposal infusion device is known to be useful for chemotherapy. Anti-cancer drug can be released by the force of carbon dioxide or balloon. In this study, we compared the$Anapa^{(R)}$ (LC0020) with B Company (LV2 ml) in terms of infusion rate and stability. Infusion rate was determined every six minute using software, MSI08IH. Stability of 5-fluorouracil was examined periodically using a High Performance Liquid Chromatography. Infusion rates of gas-derived $Anapa^{(R)}$ device were 2.29, 1.86, 1.98 ml/hr and those of balloon-derived B Company device were 1.71, 1.58, 1.37 ml/min. There were no significant differences in stability of 5-fluorouracil between $Anapa^{(R)}$ and B Company devices. In summary, gas-derived $Anapa^{(R)}$ device is thought to be comparable or superior to balloon-derived B Company device as far as infusion rate and stability are concerned. We expect that $Anapa^{(R)}$ as a home infusion device can be employed to improve a quality of life and compliance of cancer patients.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.3
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• pp.204-212
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• 2020

In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.12
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• pp.1659-1666
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• 2018

When the input sound is mixed voice and sound, it can be seen that the voice recognition rate is lowered due to the noise, and the speech recognition rate is improved by improving the MEMS device which is the H / W device in order to overcome the S/W processing limit. The MEMS microphone device is a device for inputting voice and is implemented in various shapes and used. Conventional MEMS microphones generally exhibit excellent performance, but in a special environment such as noise, there is a problem that the processing performance is deteriorated due to a mixture of voice and sound. To overcome these problems, we developed a newly designed MEMS device that can detect the voice characteristics of the initial input device.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.2
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• pp.150-154
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• 2019

In the design of semiconductor integrated circuits, ESD is one of the important issues related to product quality improvement and reliability. In particular, as the process progresses and the thickness of the gate oxide film decreases, ESD is recognized as an important problem of integrated circuit design. Many ESD protection circuits have been studied to solve such ESD problems. In addition, the proposed device can modify the existing SCR structure without adding external circuit to effectively protect the gate oxide of the internal circuit by low trigger voltage, and prevent the undesired latch-up phenomenon in the steady state with high holding voltage. In this paper, SCR-based novel ESD(Electro-Static Discharge) device with the high holding voltage has been proposed. The proposed device has the lower triggering voltage without an external trigger circuitry and the high holding voltage to prevent latch-up phenomenon during the normal condition. Using TCAD simulation results, not only the design factors that influence the holding voltage, but also comparison of conventional ESD protection device(ggNMOS, SCR), are explained. The proposed device was fabricated using 0.35um BCD process and was measured electrical characteristic and robustness. In the result, the proposed device has triggering voltage of 13.1V and holding voltage of 11.4V and HBM 5kV, MM 250V ESD robustness.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.442-448
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• 2022

Intermediate-level radioactive waste (ILW) is not subject to legal approval for cave disposal in Korea. To solve this problem, a spent resin treatment device that separates ¹⁴C-containing resin from zeolite/activated carbon and desorbs ¹⁴C through a microwave device has been developed. In this study, we evaluated the radiological safety of the operators performing repair work in the event of a failure in such a device treating 1 ton of spent resin mixture per day. Based on the safety evaluation results, it is possible to formulate a design plan that can ensure the safety of workers while developing a commercialized device. When each component of the resin treatment device can be repaired from the outside, the maximum and minimum allowable repair times are calculated as 263.2 h and 27.7 h for the ¹⁴C-detached resin storage tank and zeolite/activated carbon storage tank, respectively. For at least 6 h per quarter, the worker's annual dose limit remains within 50 mSv/year; further, over 5 years, it remained within 100 mSv. At least 6 h of repair time per quarter is considered, under conservative conditions, to verify the radiological safety of the worker during repair work within that time.