• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.87-92
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• 2016

The importance of heat dissipation for the electric device modules along the thickness direction is increasing. Two types of two-layered materials, metal-metal bonding and dielectric-metal bonding, have been fabricated by roll bonding process and a thermal diffusivity of the specimens was measured along the thickness direction. The thermal diffusivity of specimens with metal-metal bonding measured by light flash analysis (LFA) showed a same value independent on the direction of heat flow. However, the thermal diffusivity of specimens with dielectric-metal bonding showed a big difference of 17.5% when the direction of heat flow changed oppositely in the LFA process. The measured thermal diffusivity of specimens when the heat flows from metal to dielectric direction showed smaller value of 17.5% compared to the value when the heat flow from dielectric to metal direction. The difference in thermal diffusivity of specimens with dielectric-metal bonding dependence on direction of heat flow is due to the electron-phonon resistance that occurred transfer process of electron energy to phonon energy near the interface.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.1-5
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• 2018

In this study, the effects of indium (In) doping in InGaN/GaN multi quantum well (MQW) on photoelectrochemical (PEC) properties were investigated. Each quantum well (QW) layer with controlled In content were grown on sapphire substrate. Before growth of MQW, GaN growth consisted of various stages in the following order: buffer GaN growth, undoped GaN growth, and Si-doped n-type GaN growth. Absorbance of InGaN/GaN MQW having different In composition was higher than that of the InGaN/GaN MQW having a constant In composition. It indicates that InGaN layer having different In composition absorbs light having a broad spectrum energy. These results are in agreement with those in photoluminescence (PL). After evaluation of PEC properties, it demonstrated that InGaN/GaN MQW having different In composition was improved InGaN/GaN MQW having constant In composition in PEC water splitting ability.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.1-6
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• 2007

In this study, the pentacene thin films were prepared by the soluble process, and characterized fur the application of the organic thin film transistor(OTFT) device. To dissolve the pentacene material, two kinds of solvents such as toluene and chloroform were used, and the effects of these solvents on the properties of pentacene thin films coated on ITO/Glass substrate were investigated. Pentacene thin films were prepared by using spin-coating methode and characterized the surface morphology, crystalline and electrical properties. From the AFM measurement, the surface morphology of the pentacene film dissolved with chloroform was improved compared with the one dissolved with toluene solvent. XRD measurement showed that all prepared pentacene film samples were amorphous crystal phases without crystallization of the films. The electrical properties of the pentacene film dissolved with chloroform showed better results than the ones using toluene solvent by hall measurement system. The carrier concentration and the mobility values of pentacene films using chloroform solvent were found to be $-3.225{\times}10^{14}\;cm^{-3}$ and $3.5{\times}10^{-1}\;cm^2{\cdot}V^{-1}{\cdot}S^[-1}$, respectively. The resistivity was about $2.5{\times}10^2\;{\Omega}{\cdot}cm$.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.49-53
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• 2001

Vortical etching experiments of ($SrBi_2Ta_2O_9$)/Si thin films have been performed by using the inductively coupled plasma reactive ion etching (ICP-ME) apparatus. The purposes of these experiments are to get the effective area of vertical surface. Because this technology is very important to get good qualities of ferroelectric gate structure, capacitor and the minimum parasitic effects related to the excellent performances of the FRAM (Ferroelectric Random Access Memory) device. The reacting gases were Ar and $Cl_2$gases, and various $Ar/C1_2$flow ratios were used. The etching experiments were carried out at various RF powers such as 700, 700, 500W and at various DC powers such as 200, 150, 100, 50W, respectively. The maximum etch rate of $SrBi_2Ta_2O_9$/Si thin films was 1050 A/min at the $Ar/C1_2$ gas ratio of 20/16, RF power of 700 W and DC power of 200 W. From the SEM (scanning electron microscopy) image of the SBT thin films, the wall angle was as good as about $82^{\circ}$.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.49-56
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• 2002

In this study, the InGaP epilayers were grown on the exact and the $2^{\circ}$, $6^{\circ}$, $10^{\circ}$ of cut GaAs substrates by metal-organic vapor phase epitaxy, and the effects of interfacial elastic strains determined by the substrate offcut angle upon the resulting dislocation density of epilayer were investigated for the first time. The elastic strains were obtained from lattice mismatch and lattice misfit by TXRD, and the dislocation densities from epilayer x-ray FWHM. For the offcut angle range used in this study, the elastic strain was maximum and x-ray FWHM minimum at offcut angle $6^{\circ}$. From 11K PL measurements, PL wavelength was found to decrease with an increase of offcut angle. PL intensity was maximum at offcut angle $6^{\circ}$. TEM results showed that the electron diffraction pattern was of typical zincblende structure, and that the dislocation density was minimum for substrate offcut angle $6^{\circ}$. The results obtained in this study, along with the device fabrication process and beam characteristics, clearly demonstrated that the optimum substrate offcut angle for the InGaP/GaAs heterostructures is $6^{\circ}$.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.49-53
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• 2007

The direct methanol fuel cell (DMFC) is a promising power source for portable applications due to many advantages such as simple construction, compact design, high energy density, and relatively high energy-conversion efficiency. In this work, an electrochemical methanol sensor for monitoring the methanol concentration in direct methanol fuel cells was fabricated using a thin composite nafion membrane as the electrolyte. We have analyzed the I-V characteristic of the fabricated methanol sensor as a function of methanol concentration, catalyst electrode and platinum(Pt) thickness. The fabricated sensor was analyzed by I-V measurement with various methanol concentration. When we measured the sensor characteristics with 10nm Pt and at 1V, the current value was $1.30{\times}10^{-6}A,\;1.96{\times}10^{-6}A\;and\;2.80{\times}10^{-6} A$ for three methanol concentration of 1M, 2M and 3M, respectively. When the methanol concentration was fixed at 2M, the current value of the fabricated device with Pt layers of 5, 10 and 15 nm thickness was $3.06{\times}10^{-6}A,\;1.96{\times}10^{-6}A\;and\;1.00{\times}10^{-6}A$, respectively. These results lead us to the conclusion that when the methanol concentration increases, the output current increases and when the catalyst electrode become thinner, the current increase more. It showed that, the thinner the catalyst electrode, the more electrochemistry become activation.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.9-13
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• 2002

Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.61-67
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• 2017

As transistor density increases rapidly, a heat flux from IC device rises at fast rate. Thermal issues raised by high heat flux cause IC's performance and reliability problems. To solve these thermal management problems, the conventional cooling methods of IC devices were reached their thermal limit. As a result, alternative cooling methods such as liquid heat pipe, thermoelectric cooler, thermal Si via and etc. are currently emerging. In this paper microchannel liquid cooling system with TSV was investigated. The effects of 2 coolants (DI water and ethylene glycol 70 wt%) and 3 metal bumps (Ag, Cu, Cr/Au/Cu) on cooling performance were studied, and the total heat flux of various coolant and bump cases were compared. Surface temperature of liquid cooling system was measured by infrared microscopy, and liquid flowing through microchannel was observed by fluorescence microscope. In the case of ethylene glycol 70 wt% at $200^{\circ}C$ heating temperature, the total heat flux was $2.42W/cm^2$ and most of total heat flux was from liquid cooling effect.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.11-16
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• 2002

In this study, the dry etching characteristics of $SrBi_2Ta_2O_9$ (SBT) thin films were investigated by using ICP-RIE (inductively coupled plasma-reactive ion etching). The etching damage and degradation were analyzed with XPS (X-ray photoelectron spectroscopy) and C-V (Capacitance-Voltage) measurement. The etching rate increased with increasing the ICP power and the capacitively coupled plasma (CCP) power. The etch rate of 900$\AA$/min was obtained with 700 W of ICP power and 200 W of CCP power. The main problem of dry etching is the degradation of the ferroelectric material. The damage-free etching characteristics were obtained with the $Ar/C1_2/CHF_3$ gas mixture of 20/14/2 when the ICP power and CCP power were biased at 700 W and 200 W, respectively. The experimental results show that the dry etching process with ICP-RIE is applicable to the fabrication of the single transistor type ferroelectric memory device.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.33-42
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• 2009

A polymer-based flexible neural probe was fabricated for monitoring of neural activities from a brain. To improve the insertion stiffness, a 5 ${\mu}m$ thick biocompatible Au layer was electroplated between the top and bottom polymer layers. The developed neural probe penetrated a gel whose elastic modulus is similar to that of a live brain tissue without any fracture, To minimize mechanical residual stress and bending from the probe, two new methods were employed: (1) use of a thermal annealing process after completing the device and (2) incorporation of multiple different layers to compensate the residual stress between top and bottom layers. Mechanical bending around the probe tip was clearly removed after employing the two processes. In electrical test, the developed probe showed a proper impedance value to record neural signals from a brain and the result remained the same for 72 hours. In simple in-vitro probe characterization, the probe showed a great removal of residual stress and an excellent recording performance. The in-vitro recording results did not change even after 1 week, suggesting that this electrode has the potential for great recording from neuron firing and long-term implant performance.