• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2006년도 International Symposium on GPS/GNSS Vol.2
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• pp.235-240
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• 2006

Ionospheric scintillation induces a rapid change in the amplitude and phase of radio wave signals. This is due to irregularities of electron density in the F-region of the ionosphere. It reduces the accuracy of both pseudorange and carrier phase measurements in GPS/satellite based Augmentation system (SBAS) receivers, and can cause loss of lock on the satellite signal. Scintillation is not as strong at mid-latitude regions such that positioning is not affected as much. Severe effects of scintillation occur mainly in a band approximately 20 degrees on either side of the magnetic equator and sometimes in the polar and auroral regions. Most scintillation occurs for a few hours after sunset during the peak years of the solar cycle. This paper focuses on estimation of the effects of ionospheric scintillation on GPS and SBAS signals using a software receiver. Software receivers have the advantage of flexibility over conventional receivers in examining performance. PC based receivers are especially effective in studying errors such as multipath and ionospheric scintillation. This is because it is possible to analyze IF signal data stored in host PC by the various processing algorithms. A L1 C/A software GPS receiver was developed consisting of a RF front-end module and a signal processing program on the PC. The RF front-end module consists of a down converter and a general purpose device for acquiring data. The signal processing program written in MATLAB implements signal acquisition, tracking, and pseudorange measurements. The receiver achieves standalone positioning with accuracy between 5 and 10 meters in 2drms. Typical phase locked loop (PLL) designs of GPS/SBAS receivers enable them to handle moderate amounts of scintillation. So the effects of ionospheric scintillation was estimated on the performance of GPS L1 C/A and SBAS receivers in terms of degradation of PLL accuracy considering the effect of various noise sources such as thermal noise jitter, ionospheric phase jitter and dynamic stress error.

• 한국정보통신학회논문지
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• 제14권2호
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• pp.305-311
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• 2010

iATA는 TCP/IP 네트워크상에서 ATA 명령어를 전달하기 위해 개발된 블록-레벨 프로토콜로서, 모바일 기기의 스토리지 한계를 극복하기 위한 대안으로 활용 될 수 있다. 본 논문은 RAID5 분산 스토리지 서버 개념을 iATA에 적용하여 스토리지 서버의 신뢰성과 속도를 개선하고자 한다. 분산 스토리지 서버중 하나의 서버가 다운된 경우에 나머지 서버 데이터의 XOR 함수를 적용하여 데이터 회복이 가능하며 이를 통해 데이터의 신뢰성을 높일 수 있다. 벤치마킹 실험과 시험을 통해 제안된 iATA 프로토콜은 제한된 스토리지를 가지고 있는 모바일 기기상에서 효율적이 고도 신뢰성 있는 가상 스토리지 프로토콜로서 사용될 수 있음을 보여주고 있다.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• 전기학회논문지
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• 제64권11호
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• pp.1543-1550
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• 2015

Ferroresonance is a non-linear vibrational phenomenon that is generated by the electrical interaction of the inductance component with the capacitor component of a certain capacitance as the device of the inductance component such as a transformer is saturated due to the degradation, the waveform distortion of current and voltage, and the oscillation of overcurrent and overvoltage in a system. Recently, ferroresonance was generated from the waveform distortion of current and voltage, or the overvoltage or undervoltage phenomenon caused by the nature of an electrical power system and design technology of the transformer in the three phase transformer system. Hence, in general, ferroresonance analyzed by converting to the LC equivalent circuit. However, in general, the aforementioned analytical method only applies to the resonance phenomenon that is generated by the interaction of the capacitance of bussbar and grounding, and switching as the capacitor component with PT and the transformer as the inductance component in a system. Subsequently, the condition where ferroresonance was generated since overvoltage was supplied as line voltage to the phase voltage and thus the iron core is saturated due to the interconnection between grounded and ungrounded systems could not be analyzed when single phase PT was connected in a ${\Delta}$/Y connection system. In this study, voltage swell in the configuration of grounded circuit of a step-up transformer with the ${\Delta}-{\Delta}$ connection linked to PT for control power and the ferroresonance generated by overvoltage when the line voltage of the ${\Delta}-{\Delta}$ connection was connected to the phase voltage of the grounded Y-Y connection were analyzed using PSCAD / EMTDC through the failure case of the transformer caused by ferroresonance in the system with the ${\Delta}-{\Delta}$/Y-Y connection, and subsequently, the preventive measure of ferroresonance was proposed.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.257-257
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2009년 추계학술발표대회
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• pp.217-220
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• 2009

Conductive adhesives have been investigated for use in microelectronics packaging as a lead-free solder substitute due to their advantages, such as low bonding temperature. However, high resistivity and poor mechanical behavior may be the limiting factors for the development of conductive adhesives. The metal fillers and the polymer resins provide electrical and mechanical interconnections between surface mount device components and a substrate. As metal fillers used in conductive adhesives, silver is the most commonly used due to its high conductivity and the stability. However the cost of conductive adhesives with silver fillers is much higher than usual lead-free solders and silver has poor electro-migration performance. So, copper can be a promising candidate for conductive filler metal due to its low resistivity and low cost, but oxidation causes this metal to lose its conductivity. In this study, electrically conductive adhesives (ECAs) using surface modified copper fillers were developed. Especially, in order to overcome the problem associated with the oxidation of copper, copper particles were coated with silver, and the silver-coated copper was tested as a filler metal. Especially the effect of silver coating on the electrical resistance just after curing and after aging was investigated. As a result, it was found that the electrical resistance of ECA with silver-coated copper filler was clearly lower and more stable than that of ECA with pure copper filler after curing process. And, during high temperature storage test, the degradation rate of electrical resistance for ECA with silver coated copper filler was quite slower than that for ECA with pure copper filler.

• 방사선산업학회지
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• 제9권1호
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• pp.1-7
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• 2015

The trend of x-ray image sensor has been evolved from an amorphous silicon sensor to a crystal silicon sensor. A crystal silicon X-ray sensor, meaning a X-ray CIS (CMOS image sensor), is consisted of three transistors (Trs), i.e., a Reset Transistor, a Source Follower and a Select Transistor, and a photodiode. They are highly sensitive to radiation exposure. As the frequency of exposure to radiation increases, the quality of the imaging device dramatically decreases. The most well known effects of a X-ray CIS due to the radiation damage are increments in the reset voltage and dark currents. In this study, a pixel array of a X-ray CIS was made of $20{\times}20pixels$ and this pixel array was exposed to a high radiation dose. The radiation source was Co-60 and the total radiation dose was increased from 1 to 9 kGy with a step of 1 kGy. We irradiated the small pixel array to get the increments data of the reset voltage and the dark currents. Also, we simulated the radiation effects of the pixel by MCNP (Monte Carlo N-Particle) simulation. From the comparison of actual data and simulation data, the most affected location could be determined and the cause of the increments of the reset voltage and dark current could be found.