• Applied Science and Convergence Technology
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• 제25권5호
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• pp.88-91
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• 2016

The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

• 대한전자공학회논문지SD
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• 제37권2호
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• pp.5-12
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• 2000

열전퇴의 고온 접합부가 Si/sub 3/N/sub 4//SiO/sub 2//Si/sub 3/N/sub 4/ 멤브레인에 의해 실리콘 기판으로부터 열차단되고, 열전퇴의 저온 접합부는 방열판 역할을 하는 실리콘 림(rim)에 의해 지지되는 멤브레인위에 놓여지며, Au-black이 적외선 흡수체로 사용되는 비냉각 금속 박막형 열전퇴 적외선 검지기를 제작하고, 적외선 검지기의 성능지수에 대해 논의하였다. 3∼14㎛의 파장범위에서 Au-black의 적외선 흡수도는 대개 90%정도였고, Au 증발시의 챔버압력 및 증착된 Au-black의 단위면적당 질량에 크게 의존하였다. 쵸핑 주파수가 5 Hz일 때 Bi-Sb 열전퇴 적외선 검지기의 전압 감응도, 잡음등가전력 및 비검지도는 실온의 공기중에서 각각 약 10.5V/W, 2.3 ㎻/㎐½, 및 1.9×10/sup 7/㎝·㎐½/w였다.

• 한국광학회지
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• 제9권6호
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• pp.428-432
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• 1998

장파장영역의 적외선 검출을 위해 구속­비구속 상태간 전이를 이용한 GaAs/AlGaAs 이종접합 다중양자우물구조형태 검출기를 제작하여 전기적, 광학적 특성을 살펴보았다. 시료는 MBE를 이용하여 SI-GaAs(100)기판 위에 장벽 500${\AA} $, 폭 40${\AA} $의 양자우물구조를 25층 성장시켰으며, Al의 몰분율은 0.28로 하였고 우물의 중심부 20${\AA} $은 $2{\times}10^{18}cm^{-3}$의 농도로 Si n-도핑을 하였다. 200$\times$200$\mu\textrm{m}^2$ 면적의 사각형 화소가 되도록 시료를 식각한 후 Au/Ge로 전극을 붙여 1$\times$8 검출기 배열을 제작하였다. 10K의 온도에서 적외선 광원에 대한 광특성을 조사한 결과 1차원으로 배열한 8개의 단일소자 모두 7.8$\mu\textrm{m}$파장에서 최대반응을 보였으며 검출률($D^＊$)은 최대 $4.9{\times}10^9cm\sqrt{Hz}/W$이었다.

• 대한전자공학회논문지SD
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• 제37권8호
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• pp.28-34
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• 2000

능면체정 구조를 갖는 $Pb(Zr_{0.9}Ti_{0.1})O_3$ 세라믹을 제작한 후, dynamic 방법으로 초전특성을 측정하여 초전형 적외선 센서의 응용 가능성에 대하여 조사하였다. $Pb(Zr_{0.9}Ti_{0.1})O_3$ 세라믹의 응답 특성이 저주파와 고주파 영역에 따른 변조 주파수의 주파수 분산 (dispersion) 으로 고려되었고, 그에 따른 초전특성의 주파수 의존성을 관찰하였다. 저주파 (2~200Hz) 영역에서, 분역의 재배향(reorientation) 으로 고려되었고 그에 다른 초전특성의 주파수의 속도보다 빠르므로 분극의 변화량이 증가하여 최대값을 나타낸다. 반면에, 고주파 (200~2000Hz) 영역에서 분역의 재배향은 주파수 증가에 따라 방해를 받아 분극의 변화량이 억제되어 초전 응답이 감소하는 것을 알 수 있다. 초전계수와 재료평가지수는 각각 $1.6{\times}10^{-8}C/cm^2{\cdot},\;1.6{\times}10^{-11}C{\cdot}cm/J$이었고, 잡음등가전력과 비검출능은 각각 $2.4{\times}10^{-7}W/Hz^{1/2},\;4.17{\times}10^6cm{\cdot}Hz^{1/2}/W$이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.298-298
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• 2014

Quantum dot infrared photodetectors (QDIPs) based on Stranski-Krastanov (SK) quantum dots (QDs) have been widely explored for improved device performance using various designs of heterostructures. However, one of the biggest limitations of this approach is the "pancake" shape of the dot, with a base of 20-30 nm and a height of 4-6 nm. This limits the 3D confinement in the quantum dot and reduces the ratio of normal incidence absorption to the off-axis absorption. One of the alternative growth modes to the formation of SK QDs is a sub-monolayer (SML) deposition technique, which can achieve a much higher density, smaller size, better uniformity, and has no wetting layer as compared to the SK growth mode. Due to the advantages of SML-QDs, the SML-QDIP design has attractive features such as increased normal incidence absorption, strong in-plane quantum confinement, and narrow spectral wavelength detection as compared with SK-DWELL. In this study, we report on the improved device performance of InAs/InGaAs SML-QDIP with different composition of $Al_xGa1-_xAs$ barrier. Two SML-QDIPs (x=0.07 for sample A and x=0.20 for sample B) are grown with the 4 stacks 0.3 ML InAs. It is investigated that sample A with a confinement-enhanced (CE) $Al_{0.22}Ga_{0.78}As$ barrier had a single peak at $7.8{\mu}m$ at 77 K. However, sample B with an $Al_{0.20}Ga_{0.80}As$ barrier had three peaks at (${\sim}3.5{\mu}m$, ${\sim}5{\mu}m$, ${\sim}7{\mu}m$) due to various quantum confined transitions. The measured peak responsivities (see Fig) are ~0.45 A/W (sample A, at $7.8{\mu}m$, $V_b=-0.4V$ bias) and ~1.3 A/W (sample B, at $7{\mu}m$, $V_b=-1.5V$ bias). At 77 K, sample A and B had a detectivity of $1.2{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-0.4V$ bias) and $5.4{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-1.5V$ bias), respectively. It is obvious that the higher $D^*$ of sample B (than sample A) is mainly due to the low dark current and high responsivity.