• 제목/요약/키워드: depth buffer

검색결과 117건 처리시간 0.031초

그래픽스 하드웨어를 이용한 입체 스윕 경계 근사 (Approximating 3D General Sweep Boundary using Graphics Hardware)

  • 안재우;김명수;홍성제
    • 한국컴퓨터그래픽스학회논문지
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    • 제8권3호
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    • pp.1-7
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    • 2002
  • This paper presents a practical technique for approximating the boundary surface of the volume swept out by three-dimensional objects using the depth-buffer. Objects may change their geometries and orientations while sweeping. The sweep volume is approximated as a union of volume elements, which are just rendered inside appropriate viewing frusta of virtual cameras and mapped into screen viewports with depth-buffer. From the depth of each pixel in the screen space of each rendering, the corresponding point in the original world space can be computed. Appropriately connecting these points yields polygonal faces forming polygonal surface patches approximately covering some portion of the sweep volume. Each view frustum adds one or more surface patches in this way, and these presumably overlapped polygonal surface patches approximately enclose the whole sweep volume. These patches may further be processed to yield non-overlapped polygonal surfaces as an approximation to the boundary of the original 3D sweep volume.

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형상 스무딩과 Z-buffer 렌더링을 이용한 깊이 영상의 노이즈 필터링 (Noise filtering for Depth Images using Shape Smoothing and Z-buffer Rendering)

  • 김승만;박정철;조지호;이관행
    • 한국HCI학회:학술대회논문집
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    • 한국HCI학회 2006년도 학술대회 1부
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    • pp.1188-1193
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    • 2006
  • 본 논문에서는 동적 객체의 3 차원 정보를 표현하는 깊이 영상의 노이즈 필터링 방법을 제안한다. 실제 객체의 동적인 3 차원 정보는 적외선 깊이 센서가 장착된 깊이 비디오 카메라를 이용하여 실시간으로 획득되며, 일련의 깊이 영상, 즉 깊이 비디오(depth video)로 표현될 수 있다. 하지만 측정환경의 조명조건, 객체의 반사속성, 카메라의 시스템 오차 등으로 인해 깊이 영상에는 고주파 성분의 노이즈가 발생하게 된다. 이를 효과적으로 제거하기 위해 깊이 영상기반의 모델링 기법(depth image-based modeling)을 이용한 3 차원 메쉬 모델링을 수행한다. 생성된 3 차원 메쉬 모델은 깊이 영상의 노이즈로 인해 경계 영역과 형상 내부 영역에 심각한 형상 오차를 가진다. 경계 영역의 오차를 제거하기 위해 깊이 영상으로부터 경계 영역을 추출하고, 가까운 순서로 정렬한 후 angular deviation 을 이용하여 불필요하게 중복된 점들을 제거한다. 그리고 나서 2 차원 가우시안 스무딩 기법을 적용하여 부드러운 경계영역을 생성한다. 형상 내부에 대해서는 경계영역에 제약조건을 주고 3 차원 가우시안 스무딩 기법을 적용하여 전체적으로 부드러운 형상을 생성한다. 최종적으로 스무딩된 3 차원 메쉬모델을 렌더링할 때, 깊이 버퍼에 있는 정규화된 깊이 값들을 추출하여 원래 깊이 영상과 동일한 깊이 영역을 가지도록 저장함으로서 전역적으로 연속적이면서 부드러운 깊이 영상을 생성할 수 있다. 제안된 방법에 의해 노이즈가 제거된 깊이 영상을 이용하여 고품질의 영상기반 렌더링이나 깊이 비디오 기반의 햅틱 렌더링에 적용할 수 있다.

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AUTOMATIC TEXTURE EXTRACTION FROM AERIAL PHOTOGRAPHS USING THE ZI-BUFFER

  • Han, Dong-Yeob;Kim, Yong-Il;Yu, Ki-Yun;Lee, Hyo-Seong;Park, Byoung-Uk
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2007년도 Proceedings of ISRS 2007
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    • pp.584-586
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    • 2007
  • 3D virtual modeling such as creation of a cyber city or landscape, or making a 3D GIS requires realistic textures. Automatic texture extraction using close range images is not yet efficient or easy in terms of data acquisition and processing. In this paper, common problems associated with automatic texture extraction from aerial photographs are explored. The ZI-buffer, which has depth and facet ID fields, is proposed to remove hidden pixels. The ZI-buffer algorithm reduces memory burden and identifies visible facets. The correct spatial resolution for facet gridding is tested. Error pixels in the visibility map were removed by filtering.

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PAE법에 의한 GaAs/Ge/Si 이종접합 성장과 그 특성 (GaAs/Ge/Si Heteroepitaxy by PAE and Its Characteristics)

  • 김성수;박상준;이성필;이덕중;최시영
    • 전자공학회논문지A
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    • 제28A권5호
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    • pp.380-386
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    • 1991
  • Hydrogen plasma-assisted epitaxial(PAE) growth of GaAs/Si and GaAs/Ge/Si with Ge buffer layer has been investigated. By means of photoluminescence, Nomarski microscopu, and $\alpha$-step, it could be known that GaAs on Si with Ge buffer layer has better crystalline quality than GaAs on Si without Ge buffer layer. The stoichiometry of GaAs layer on Si was confirmed by the depth profile of Auger electron spectroscope (AES). Also the native oxide(SiO$_2$) layer on Si substrate was plama-etched and the removal of the oxide layer was confirmed by AES. Photoluminescence peak wavelength of GaAs/Ge/Si with Ge buffer of 1\ulcorner thickness and GaAs growth rate of 160$\AA$/min was 8700$\AA$and FWHM was 12$\AA$.

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광선추적법의 속도개선을 위한 ZF-버퍼 알고리즘 연구 (A study on the ZF-buffer algorithm for Ray-tracing Acceleration)

  • 김세현;윤경현
    • 한국컴퓨터그래픽스학회논문지
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    • 제6권1호
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    • pp.29-36
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    • 2000
  • 본 논문은 광선추적법의 교차판별을 가속화할 수 있는 ZF-버퍼 방법을 제안한다. ZF-버퍼 방법은 광선추적법의 전처리 단계에서 Z-버퍼 방법을 적용하는데, 화면을 렌더링 하는 대신 화면에 렌더링 될 다각형 자료구조의 포인터를 기록하여 교차판별에 이용하는 방법이다. 결과적으로 해당 화소에서 광선과 교차할 가장 가까운 다각형을 찾아낼 수 있게 된다. ZF-버퍼 방법과 vista-버퍼 방법은 유사하지만 ZF-버퍼방법이 바운딩 볼륨을 사용하지 않고 화면에 나타날 다각형의 자료구조를 결과로 산출한다는 점이 다르다. 본 논문은 실험결과로서 9216개의 다각형으로 구성된 유타 주전자 영상을 사용하였으며 vista-버퍼와 비교하여 평균 3배정도의 속도 개선 효과가 있음을 확인하였으며, 또한 반사/굴절체에도 이 방법의 적용 가능성을 모색하였다.

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PL Property of Al-N Codoped p-type ZnO Thin Films Fabricated by DC Magnetron Sputtering

  • Liu, Yan-Yan;Jin, Hu-Jie;Park, Choon-Bae;Hoang, Geun-C.
    • Transactions on Electrical and Electronic Materials
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    • 제10권3호
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    • pp.89-92
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    • 2009
  • High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

An implementation of CSG modeling technique on Machining Simulation using C++ and Open GL

  • ;김수진;이종민
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1053-1056
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    • 2008
  • An application of CSG (Constructive Solid Geometry) modeling technique in Machining Simulation is introduced in this paper. The current CSG model is based on z-buffer CSG Rendering Algorithm. In order to build a CSG model, frame buffers of VGA (Video Graphic Accelerator) should be used in term of color buffer, depth buffer, and stencil buffer. In addition to using CSG model in machine simulation Stock and Cutter Swept Surface (CSS) should be solid. Method to create a solid Cuboid stock and Ball-end mill CSS are included in the present paper. Boolean operations are used to produce the after-cut part, especially the Difference operation between Stock and CSS as the cutter remove materials form stock. Finally, a small program called MaSim which simulates one simple cut using this method was created.

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절개 창상 치유시 염증세포에 관한 연구

  • 한수부
    • 대한치과의사협회지
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    • 제20권7호통권158호
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    • pp.625-630
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    • 1982
  • The author observed the behavior of inflammatory cells in the primary intension of incisional wound on the Albino rat palate. The superficial wounds (0.5mm depth) were made anteroposterior lineally by surgical knife. They were sacrified on 4, 8, 12, 16, 24, 48, 72 and 120 hr after wounding. The specimens were fixed in 2.5% glutaraldehyde in 0.1 M cacodylate buffer and 1% osmic acid in 0.1M cacodylate buffer, and embeddd in Epon 812. Ultrathin sections were obtained by LKB 8800, and stained with uranyl acetate/lead citrate, and observed with Corynth 500 EM.

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격물구(隔物灸)의 격물(隔物) 특성에 따른 온열자극 비교연구 (A Comparative Study on Buffer Characteristic of Indirect Moxibustion)

  • 왕개하;김은정;조현석;김갑성;이승덕;김경호
    • Journal of Acupuncture Research
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    • 제29권5호
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    • pp.75-85
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    • 2012
  • Objectives : Indirect moxibustion is one of the thermotherapy in Korean medicine and buffer of ginger and mankshood slice are common materials to be used. However it is difficult to control the power of thermal stimulation and the stimulation is greatly influenced by the characteristic of buffer. So we research on the buffer characteristic of indirect moxibustion according to the thickness, diameter and water content changes. Methods : We used thermocouples to measure temperature from surface to depth of 2, 4, 6, 8, 10, 12, 14mm on tissue model and calculated peak temperature($^{\circ}C$). The data were analyzed with student t-test and one-way ANOVA(p<0.05). Results : 1. The peak temperature of indirect moxibustion with ginger were determined by thickness of ginger slice and temperature changes according to the thickness at intervals of 1mm but according to the diameter at intervals of 4mm. 2. The peak temperature of indirect moxibustion with mankshood were determined by thickness of mankshood slice also. The peak temperature of mankshood moxibustion was higher than that of ginger moxibustion. 3. In this study, 2mm-thick-ginger slice and 3mm-thick-mankshood slice were suitable for indirect moxibustion. Variation in the thickness of which is more efficient to control the power of thermal stimulation on indirect moxibustion. 4. The more water loss we got on ginger slice, the higher peak temperature we measured at the surface of moxibustion. But the thermal stimulation was not conducted more than 2mm in the depth. 5. The thickness and water content of buffer are important in indirect moxibustion. Conclusions : The temperature of indirect moxibustion depends on the thickness of buffer than the diameter of it. Therefore, it is more efficient according to the thickness of buffer so that we control the power of thermal stimulation. And water content of buffer is one of the important factor in indirect moxibustion.

PbO 완충층을 이용한 Pt/Pb1.1Zr0.53Ti0.47O3/PbO/Si (MFIS)의 미세구조와 전기적 특성 (Microstructure and Electrical Properties of the Pt/Pb1.1Zr0.53Ti0.47O3/PbO/Si (MFIS) Using the PbO Buffer Layer)

  • 박철호;송경환;손영국
    • 한국세라믹학회지
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    • 제42권2호
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    • pp.104-109
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    • 2005
  • PbO 완충층의 역할을 확인하기 위해, r.f. magnetron sputtering법을 이용하여 p-type (100) Si 기판 위에 $Pt/Pb_{1.1}Zr_{0.53}Ti_{0.47}O_{3}$와 PbO target으로 Pt/PZT/PbO/Si의 MFIS 구조를 제조하였다. MFIS 구조에 완충층으로 PbO를 삽입함으로써 PZT 박막의 결정성이 크게 향상되었고, 박막의 공정온도도 상당히 낮출 수 있었다. 그리고 XPS depth profile 분석 결과, PbO 증착시 기판온도가 PbO와 Si의 계면에서 Pb의 확산에 미치는 영향을 확인하였다. PbO 완충층을 삽입한 MFIS는 높은 메모리 윈도우와 낮은 누설전류 밀도를 가지는 추수한 전기적 특성을 나타내었다. 특히, 기판온도 $300^{\circ}C$에서 증착된 PbO를 삽입한 Pt/PZT(200nm, $400^{\circ}C)PbO(80nm)/Si$는 9V의 인가전압에서 2.OV의 가장 높은 메모리 윈도우 값을 나타내었다.