• Carbon letters
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• v.1 no.3_4
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• pp.170-177
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• 2001

Lithium intercalated carbon (LIC) are basically employed as an anode for currently commercialized lithium secondary batteries. However, there are still strong interests in modifying carbon surface of active materials of the anode because the amount of irreversible capacity, charge-discharge capacity and high rate capability are largely determined by the surface conditions of the carbon. In this study, the carbonaceous materials were coated with tin oxide and copper by fluidized-bed chemical vapor deposition (CVD) method and their coating effects on electrochemical characteristics were investigated. The electrode which coated with tin oxides gave the higher capacity than that of raw material. Their capacity decreased with the progress of cycling possibly due to severe volume changes. However, the cyclability was improved by coating with copper on the surface of the tin oxides coated carbonaceous materials, which plays an important role as an inactive matrix buffering volume changes. An impedance on passivation film was decreased as tin oxides contents and it resulted in the higher capacity.

• Carbon letters
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• v.6 no.1
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• pp.31-40
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• 2005

The carbon nanofibers (CNFs) were synthesized through the catalytic decomposition of hydrocarbons in a quartz tube reactor. The CNFs prepared from $C_3H_8$ at $550^{\circ}C$ was selected as the purification sample due to the higher content of impurity than that prepared from other conditions. In this study, we carried out the purification of CNFs by oxidation in air or carbon dioxide after acid treatment, and investigated the influence of purification parameters such as kind of acid, concentration, oxidation time, and oxidation temperature on the structure of CNFs. The metal catalysts could be easily eliminated from the prepared CNFs by liquid phase purification with various acids and it was verified by ICP analysis, in which, for example, Ni content decreased from 2.51% to 0.18% with 8% nitric acid. However, the particulate carbon and heterogeneous fibers were not removed from the prepared CNFs by thermal oxidation in air and carbon dioxide. This result can be explained by that the direction of graphene sheet in CNFs is vertical to the fiber axis and the CNFs are oxidized at about the similar rate with the impurity carbon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.142-145
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.36-40
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• 2007

Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.794-799
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• 2017

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.49-52
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• 2001

The electrochemical characteristics of Alalloy thin film with low impurity concentrations AIZr deposited by using do magnetron co-sputtering deposition are investigated for the applications as gate bus line in the TFT-LCD panel. AlZr thin films were deposited various atomic percent of Zr. For increasing Zr atomic percent the hillock density was decreased and the resistivity was increased. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at 300 $^{\circ}C$for 20 min.. Moreover, the resistivity of AIZr does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AIZr(at.0.9%) is found to be hillock free. The electrode potentials of AIZr were less than ITO's (-1.4V) and the etching rate of AIZr(at.0.9%) was 3.8587ng/sec. in KOH(10%) solution. Caculation results reveal that the AIZr(at.0.9%) thin film can be applicable to gate line of 25" UXGA class TFT-LCD panels and can not be applicable to data line.line.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.5
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• pp.227-232
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• 2012

Magnesium alloy have good physical properties such as good castability, good vibration absorption, high strength/weight ratios. Despite the desirable properties, the poor resistance of Mg alloy impedes their use in many various applications. Therefore, magnesium alloy require surface treatment to improve hardness, corrosion and wear resistance. Plasma Electrolytic Oxidation (PEO) is one the surface treatment methods to form oxide layer on Mg alloy in alkali electrolyte. In comparison with Anodizing, there is environmental process having higher hardness and faster deposition rate. In this study, the characteristics of oxide film were examined after coating the AZ31 Mg alloy through the PEO process. We changed concentration of sodium aluminate into $K_2ZrF_6$, KF base electrolyte. The morphologies of the coating layer were characterized by using scanning electron microscopy (SEM). Corrosion resistance also investigated by potentiodynamic polarization analysis. As a result, propertiy of oxide layer were changed by concentration of sodium aluminate. Increasing with concentration of sodium aluminate in electrolyte, the oxidation layer was denser and the pore size was smaller on the surface.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.45-50
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• 1995

The excellent c-axis oriented zinc oxide thin films were prepared by the RF magnetron sputtering method on glass substrates. Optimum fabrication conditions of the ZnO films were such that RF power, substrate temperature, and gas pressure of mixture Ar(50%):$O_{2}$(50%) were 150 W, $200^{\circ}C$, and 5 mTorr, respectively. In these conditions, the deposition rate was $310\;{\AA}/min$, and the resistivity of the film was $1{\times}10^6\;{\Omega}{\cdot}cm$. The ZnO film also showed high c-axis orientation and crystalinity according to XRD pattern and SEM photograph. A fabricated interdigital transducer generated 1st mode surface acoustic wave at 46.6 MHz and 2nd mode surface acoustic wave at 52.5 MHz. At the 1st mode, the phase velocity of surface acoustic wave and the electromechanical coupling coefficient were 2795 m/sec and 0.031 %, respectivly. At the 2nd mode, they were 3149 m/sec and 0.019 %. respectivly.

• Journal of The Korean Astronomical Society
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• v.51 no.2
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• pp.37-48
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• 2018

Massive stars blow powerful stellar winds throughout their evolutionary stages from the main sequence to Wolf-Rayet phases. The amount of mechanical energy deposited in the interstellar medium by the wind from a massive star can be comparable to the explosion energy of a core-collapse supernova that detonates at the end of its life. In this study, we estimate the kinetic energy deposition by massive stars in our Galaxy by considering the integrated Galactic initial mass function and modeling the stellar wind luminosity. The mass loss rate and terminal velocity of stellar winds during the main sequence, red supergiant, and Wolf-Rayet stages are estimated by adopting theoretical calculations and observational data published in the literature. We find that the total stellar wind luminosity due to all massive stars in the Galaxy is about ${\mathcal{L}}_w{\approx}1.1{\times}10^{41}erg\;s^{-1}$, which is about 1/4 of the power of supernova explosions, ${\mathcal{L}}_{SN}{\approx}4.8{\times}10^{41}erg\;s^{-1}$. If we assume that ~ 1 - 10 % of the wind luminosity could be converted to Galactic cosmic rays (GCRs) through collisonless shocks such as termination shocks in stellar bubbles and superbubbles, colliding-wind shocks in binaries, and bow-shocks of massive runaway stars, stellar winds might be expected to make a significant contribution to GCR production, though lower than that of supernova remnants.

• Journal of Environmental Science International
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• v.19 no.3
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• pp.269-279
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• 2010

The relative contributions of physical and chemical processes to the production of ozone ($O_3$) were evaluated based on an integrated process rate (IPR) analysis using the MM5/CMAQ in a downtown (i.e., Yangsan_U) and suburban area (i.e., Ungsang) on high ozone days during spring and summer in 2006 (28 April and 8 August 2006). The IPR includes a horizontal advection (HADV) and diffusion (HDIF), a vertical advection (ZADV) and diffusion (VDlF), a dry deposition (DDEP), and a chemistry (CHEM). The VDIF in Yangsan_U was found to be the most dominant contributor (29.5% in spring and 32.1% in summer) to high $O_3$ concentrations, followed by the HADV and ZADV. In contrast, the contributions of the HADV (40.3% in spring and 32.3% in summer) in Ungsang were significantly higher than those of VDIF and ZADV. Moreover, $O_3$ production due to the chemical effect in the two areas (especially in Ungsang) during summer was found to be moderately higher than that during spring.