• Title/Summary/Keyword: deposition rate

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Adsorption of Ruthenium on the alkaline Earth Metal Compounds (알카리토금속 화합물에 의한 루테늄의 흡착)

  • 류경옥;문세기;이근범
    • Journal of the Korean Ceramic Society
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    • v.19 no.2
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    • pp.145-151
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    • 1982
  • Many materials such as silica gel, metallic oxide, activated alumina and alkaline earth metal carbonates were employed as filter media for gaseous oxides of ruthenium volatilized during high level radioactive waste processing. The adsorption efficiency of ruthenium on these materials was evaluated. For the purpose of observing behavior of ruthenium oxides, thermogravimetric analysis of ruthenium oxide in a stream of oxygen was carried out. The rate of volatilization was proportional to the square root of oxygen partial pressure, and increased exponentially with temperature. At $650^{\circ}C$, gaseous ruthenium oxides showed a strongly marked effect of deposition. Of all the materials available, calcium oxide proved to be the best that could be used to adsorb ruthenium.

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Fabrications of Y-ZrO$_2$ buffer layers of coated conductors using dc-sputtering

  • K. C. Chung;Lee, B. S.;S. M. Lim;S. I. Bhang;D. Youm
    • Progress in Superconductivity and Cryogenics
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    • v.5 no.3
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    • pp.11-14
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    • 2003
  • The detailed conditions of dc-sputtering for depositions of yttria-stabilized ZrO$_2$ (YSZ) films were investigated, while the films were grown on the CeO$_2$ template layers on biaxially textured Ni-tapes. The window of oxygen pressures for proper growth of YSZ films, which was dependent on sputtering powers, was determined by sufficient oxidations of the YSZ films and the de-oxidation of the target surface, which was required for rapid sputtering. The window turned out to be fairly wide under certain values of argon pressure. When the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated YSZ films showed good texture qualities and surface morphologies.

A study on high frequency impulse plasma power supply for improving deposition rate (증착율 개선을 위한 고주파 임펄스 플라즈마 전원장치에 대한 연구)

  • Ban, Jung-Hyun;Kim, Dong-Sung;Han, Hee-Min;Seo, Kwang-Duk;Kim, Joohn-Sheok
    • Proceedings of the KIPE Conference
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    • 2011.07a
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    • pp.384-385
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    • 2011
  • 산업기술이 고도화됨에 따라 다양한 계열의 박막이 필요하게 되었고 고밀도의 플라즈마를 공급하고 안정된 공정의 진행을 위해 순시적인 플라즈마 제어가 가능한 임펄스 전원장치에 대한 연구가 활발히 진행되고 있다. 플라즈마를 이용한 박막증착에서 요구되어지는 고품질의 박막특성을 구현하기 위해 다양한 공정기술이 개발되어 사용되고 있으며, 여기에는 박막을 구현하기 위한 증착 시스템 개발과 공정기술, 그리고 플라즈마를 형성, 유지시키는 고성능의 전원장치가 필요하다. 최근 박막증착 공정이 다양화되고 박막의 고품질화와 고속화 추세에 대응하기 위해서 고밀도의 플라즈마 제어가 가능한 고출력 임펄스 전원 개발이 요구된다. 또한, 에너지 밀도 증가를 위해 고속 임펄스 전원 장치의 필요성이 제기되고 있다. 본 연구에서는 앞서 연구되어진 저압회로를 부가한 임펄스 전원장치[1]를 수정, 보완한 후속연구로써, 증착율 개선을 위한 고주파 임펄스 플라즈마 전원 장치를 제안한다.

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Development of certified reference material (CRM)s for surface analysis II : multilayer thin films for sputter depth profiling (표면분석용 인증표준물질의 개발 II : 깊이분포도용 다층 박막 표준물질의 개발)

  • 김경중;문대원
    • Journal of the Korean Vacuum Society
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    • v.8 no.3B
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    • pp.283-289
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    • 1999
  • Multilayer thin film reference materials for the sputter depth profiling analysis are used to calibrate the sputter depth scale by measuring the sputtering rate and to optimize the sputtering conditions for the best depth resolution. Surface analysis group of Korea Research Institute of Standards and science (KRISS) have developed various types of multilayer thin films by using an ion beam sputter deposition and in-situ surface analysis system. The chemical states of the thin films reference materials were certified by in-situ XPS and the thicknesses were certified by transmission electron microscopy (TEM).

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Fabrication and Test of a Micro Pump with a Magnetostrictive diaphragm (자기변형 박막을 이용한 마이크로 펌프의 제작과 시험)

  • Seo, Jee-Hoon;Jeong, Ok-Chan;Yang, Sang-Sik
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.1017-1019
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    • 1998
  • In this paper, the fabrication of a micropump with two giant magnetostrictive films of Sm-Fe and Tb-Fe is presented. The pump consist of one silicon wafer and one cover glass. The micropump consists of an actuator diaphragm, a paired nozzle and diffuser, and two through holes. The Structure of the micropump is fabricated by the chemical vapor deposition, the etching and the sputtering of the magnetostrictive films. The deflection of the actuator measured diaphragm is measured by using the laser vibrometer and the flow rate of the micro pump is observed by using a video microscope.

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The composition control of ITO/PET by plasma emission monitor (PEM을 이용한 ITO/PET film의 조성 제어)

  • 한세진;김용환;김영환;이택동
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.438-444
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    • 1999
  • The characterization of the reactively sputtered ITO layer on the PET film has been studied. The PEM device has been used to determine the optimum stoichimetry through control of the amount of oxygen incorporated into the alloy target and the optimum operation conditions to produce films with the highest electrical conductivity and visible transparency. The PEP film was pre-treated under the plasma discharge condition to remove the adsorbed gases and to modify the surface morphology. The results revealed that by adjusting the flow rate of oxygen with the spectral intensity of indium target, the composition of plasma gas can be kept constant during the entire deposition period. The resistivity of ITO film obtained was fond to be about 37$\Omega\Box$, and the transmittance of visual range was about 86%.

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A Study on the Effect of P Concentrations of PSG Interlayers on the Yield Characteristics of the NMOS Devices (층간 절연막으로 쓰이는 PSG막의 P농도가 NMOS소자의 수율에 미치는 영향에관한 연구)

  • 김성필;박재근;조병섭;곽계달
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.11
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    • pp.1637-1643
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    • 1989
  • In this study, phosphosilicate glass(PSG) film was deposited by the oxidation of phosphine (PH3) and silane(SiH4) in nitrogen ambient with a conventional conveyerized Atmospheric Pressure Chemical Vapor Deposition(APCVD)system and phosphorus concentration is measured by using FT-IR technique. The flow characteirstics and etch rate variations ofthe films, depending on phosphorus concentrations, are investigated. Special emphasis is focused on the yield variations of NMOS-based 256K DRAM with 1.2\ulcorner metallization spacing with increasing phosphorus concentrations. As a result, the data indicates that the fairly good yield can be obtained within the range of between 8 and 10wt% phosphorus concentration, which result in a slope of flow within 45\ulcorner10\ulcorner The analysi of failure mechanism is also accompanied.

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Influence of Sputtering Condition on the Deposition Rate, the Microstruture and Magnetic Properties of Pure Iron Thin Film (순철박막의 증착속도, 미세구조 및 자성에 미치는 스퍼터링조건의 영향)

  • 한석희;김희중;강일구;최정옥;이정중
    • Journal of the Korean Magnetics Society
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    • v.1 no.2
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    • pp.22-30
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    • 1991
  • 고주파 마그네트론 스퍼터링법으로 제조된 순철박막에 대해 증착속도, 미세구조 및 자기특성에 미치는 스퍼터링조건의 영향을 조사하였다. 증착속도는 기판에 자장을 가할 경우 현저히 증가햐였으며, 이는 자장에 의한 Ar 이온의 증가효과로 고찰되었다. 투입전력이 커질수록 결정립 크기와 격자상수가 증 가하였으며 (110)면이 강하게 발달하였다. Ar 압력의 증가에 따라 격자상수는 작아졌으나 결정립 크기는 거의 변화하지 않았다. 기판자장을 가하면서 60W에서 제조한 순철박막의 자화곤란방향이 가장 낮은 약 30e의 보자력을 나타내었다. 보자력은 5mTorr 이상의 Ar 압력에서 급증하는 경향을 보였으며, 이는 표면 이 거칠어진 효과 및 제2상의 효과로 고찰되었다. 두께에 따른 보자력의 변화는 50-200nm 두께의 범위에 서 Neel의 관계를 잘 만족하였다.

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Numerical Analysis of Direct Detonation Initiation Processes in a $H_2-O_2$-Ar Mixture for Pulse Detonation Engine Applications (PDE 응용을 위한 $H_2-O_2$-Ar 혼합물에서의 직접 기폭 과정에 대한 수치 해석)

  • Kyoung Su Im;Chang Kee Kim;Jun Sik Hwang
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2003.10a
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    • pp.204-207
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    • 2003
  • The present paper reports high-fidelity simulation of direct initiation processes of cylindrical detonation waves by concentrated energy deposition. The goal is to understand the underpinning mechanisms in failed or successful detonation initiation processes. We employed the Space-Time CESE method to solve the reacting flow equations, including realistic finite-rate chemistry model of the nine species and twenty-four reactions for H$_2$-O$_2$-Ar mixtures. Detailed results of sub-critical, critical. and supercritical initiation process are reported.

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