• Korean Journal of Soil Science and Fertilizer
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• v.15 no.4
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• pp.207-212
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• 1982

Soils and sediments have been uniquely tagged by radioactive isotopes as a result of nuclear test explosions in the 1950's and 1960's. Fallout $^{137}Cs$ strongly fixed to fine soil particles, was measured in sediment profiles in Larto Lake to calculate the sedimentation rate as a time dependence. The Lake sediment profiles indicated an average rate of 1.6 to 3.1 cm/yr of sediment deposition since 1958. The rate of sediment depositions clearly decreased with time. Particle size distribution in sediment was reflected almost fine particles in lake.

• Ocean and Polar Research
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• v.32 no.2
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• pp.145-156
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• 2010

This study investigated organic carbon fluxes in Ulleung Basin sediments, East Sea based on a chamber experiment and geochemical analyses. At depths greater than 2,000 m, Ulleung Basin sediments have high organic carbon contents (over 2.0%). Apparent sedimentation rates (ASR) calculated from excess $^{210}Pb$ activity distribution, varied from 0.036 to $0.047\;cm\;yr^{-1}$. The mass accumulation rates (MAR) calculated from porosity, grain density (GD), and ASR, ranged from 131 to $184\;g\;m^{-2}\;yr^{-1}$. These results were in agreement with sediment trap results obtained at a water depth of 2100 m. Input fluxes of organic carbon varied from 7.89 to $11.08\;gC\;m^{-2}\;yr^{-1}$ at the basin sediments, with an average of $9.56\;gC\;m^{-2}\;yr^{-1}$. Below a sediment depth of 15cm, burial fluxes of organic carbon ranged from 2.02 to $3.10\;gC\;m^{-2}\;yr^{-1}$. Within the basin sediments, regenerated fluxes of organic carbon estimated with oxygen consumption rate, varied from 6.22 to $6.90\;gC\;m^{-2}\;yr^{-1}$. However, the regenerated fluxes of organic carbon calculated by subtracting burial flux from input flux, varied from 5.87 to $7.98\;gC\;m^{-2}\;yr^{-1}$. Respectively, the proportions of the input flux, regenerated flux, and burial flux to the primary production ($233.6\;gC\;m^{-2}\;yr^{-1}$) in the Ulleung Basin were about 4.1%, 3.0%, and 1.1%. These proportions were extraordinarily higher than the average of world open ocean. Based upon these results, the Ulleung Basin might play an integral role in the deposition and removal of organic carbon.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.39 no.7
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• pp.627-633
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• 2011

Performance of a hydrogen generator for a fuel cell unmanned aircraft was evaluated as the change of temperature environment. Sodium borohydride ($NaBH_4$) was used as a hydrogen source due to its high hydrogen content and good storability. The hydrogen gas was generated by the hydrolysis reaction using a catalytic reactor. Reaction chambers were set up with the range of temperatures from -20 to $60^{\circ}C$. The hydrogen generation rate and temperatures changes of reactor and separator were measured at the $NaBH_4$ concentrations of 20 and 25wt.%. As a result, the hydrogen generation rate was decreased as the repeated reaction cycles. It showed that the hydrogen generation rate was stable at low temperature, while at high temperature the hydrogen generation rate was rapidly decreased. The performance degradation was mainly caused by the catalyst loss and $NaBO_2$ deposition on the catalyst surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• Journal of Power System Engineering
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• v.5 no.2
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• pp.71-78
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• 2001

Using sodium hypophosphite as reducing agent, bath composition and plating condition of electroless copper plating on plating rate have been studied. The followings were determined as optimum, bath composition; $CuSO_4\;0.025M,\;NiSO_4\;0.002M,\;NaH_2PO_2\;0.4M$, sodium citrate 0.06M, $H_3BO_3$ 0.6M, thiourea or 2-MBT $0.2mg/{\ell}$, and operation conditions; pH $9{\sim}10$ at bath temperature rage of $60{\sim}70^{\circ}C$. A small amount of nickel ion($Ni^{2+}/Cu^{2+}$=0.002/0.025) to the hypophosphite reduced solution promotes autocatalysis and continuous plating. An additive such as thiourea or 2-MBT of a small amount($0.2mg/{\ell}$) can be used to stabilize the solution without changing plating rate much. The attivation energy between $20^{\circ}C\;and\;70^{\circ}C$ were calculated to be 11.3kcal/mol for deposition weight. Plating reaction had been ceased by the adjustment of pH above 13, temperature higher than $90^{\circ}C\;and\;under\;20^{\circ}C$. Deposited surface became worse in the case of increment of bath temperature above $80^{\circ}C$.

• Economic and Environmental Geology
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• v.36 no.6
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• pp.491-499
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• 2003

The Okinawa Trough is a rift basin formed by extension. Analysis of multichannel seismic reflection profiles from the northwestern margin of the northern Okinawa Trough reveal that the trough is characterized by a series of tilted fault blocks bounded by listric normal faults and half-grabens developed between blocks, showing typical rifted structures. The trough display three kinds of sedimentary sequences with different seismic reflection characteristics: prerift, synrift and postrift sediments. The prerift sequence develops parallel to the dip direction of tilted fault blocks. The synrift sediments, mostly deposited in the half-grabens between tilted fault blocks, are generally well characterized by divergence of the reflectors towards the blocks indicating contemporaneous deposition during tilting. The postrift sediments are featured by continuous and parallel reflectors. The width of the half-graben and the throw-displacement rate of the basin bounding fault are closely connected. The throw-displacement rate is the maximum when the rifting event is the most active and the width of the half-graben is proportional to the rate.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.257-262
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• 1999

The selective area growth of GaN by metal organic chemical vapor deposition has been carried out on GaN/ sapphire substrate using $SiO_2$ mask. We investgated the effect of growth parameters such as flow rate of $NH_3$(500­~1300sccm) and the growth temperature(TEX>$950~1060^{\circ}C$) on the growth selectivity and characteristics of GaN using the Scanning Electron Microscopy(SEM). The selectivity of GaN improved as flow rate of NH, and growth temperature in­creased. But the grown GaN shapes on the substrate windows was independent of the flow rate of $NH_3$. On the pattern shapes such as circle, stripe, and radiational pattern(rotate the stripe pattern by $30^{\circ}, 45^{\circ}$), we observed the hexagonal pyramid, the lateral over growth on the mask layer, and the difference of the lateral growth rate depending on growth condition.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.78-79
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• 2007

In this study, chemical dry characteristics of silicon nitride layers were investigated in the $F_2/N_2/Ar$ remote plasma. A toroidal-type remote plasma source was used for the generation of remote plasmas. The effects of additive $N_2$ gas on the etch rates of various silicon nitride layers deposited using different deposition techniques and precursors were investigated by varying the various process parameters, such as the $F_2$ flow rate, the addition $N_2$ flow rate and the substrate temperature. The etch rates of the various silicon nitride layers at the room temperature were initially increased and then decreased with the $N_2$ flow increased, which indicates an existence of the maximum etch rates. The etch rates of the silicon oxide layers were also significantly increased with the substrate temperature increased. In the present experiments the $F_2$ gas flow, addition $N_2$ flow rate and the substrate temperature were found to be the critical parameters in determining the etch rate of the silicon nitride layers

• Journal of the Korean Physical Society
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• v.80
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• pp.337-346
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• 2022

In this study, we investigated whether changes in the pumping speed characteristics of dry pumps due to the conduit can be predicted through simulation. The intrinsic pumping speed was measured in the dry pump characteristic evaluation system of the Korea Research Institute of Standards and Science, and the pumping speed affected by the conduit was measured using the plasma enhanced chemical vapor deposition (PECVD) equipment of the National NanoFab Center. Change in the pumping speed were predicted using conductance calculation equations and commercial vacuum-system simulation program, VacTran. A comparison of the results from the two approaches showed that the error rate was within ± 6.5%, confirming the reliability of the prediction. The simulation result was compared with the measured effective pumping speed, and it was confirmed that the error rate was within ± 10%, except in a specific part where the error rate was up to ± 40%. It is considered that the high error rate in some areas is as a result of automatically adjusting the rotation speed of the motor according to the power consumption of the inverter. However, a high simulation accuracy was obtained, demonstrating that the pumping speed characteristics can be predicted through simulation. This has potential application in the design of a vacuum system.

• Journal of Surface Science and Engineering
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• v.34 no.5
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• pp.465-474
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• 2001

Type 304SS coatings were performed at 200$\square$ onto AISI 1045 carbon steel substrate using unbalanced magnetron sputtering (UBMS) with an austenitic AISI 304 stainless steel (SS) target of 100mm diameter. The total deposition pressure in the active Ar gas was 2$\times$10$^{-3}$ Torr. Coatings were done at various target power densities and bias voltages. Chemical compositions of metallic elements of the coatings were measured by energy dispersive X-rays spectroscopy (EDS). The structure and the morphology of Type 304SS coatings were investigated by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Corrosion properties of the coated specimens were examined using electrochemical polarization measurements and electrochemical impedance spectroscopy in a deaerated 3.5% NaCl solution. The porosity rate was obtained from a comparison of the dc polarization resistance of the uncoated and coated substrates. Scratch adhesion testing was used to compare the critical loads for different coatings. XRD results showed that the sputtered films exhibit a ferritic b.c.c. $\alpha$-phase. Potentiodynamic polarization curves indicated that all samples had much higher corrosion potential and better corrosion resistance than the bare steel substrate. The corrosion performance increased with increasing power density and the adhesion was enhanced at the bias voltage of -50V. An improvement in the corrosion resistance can be obtained with a better coating adhesion. Finally, an optimized deposition condition for corrosion protection was found as $40W/cm^2$ and -50V.