• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• 한국추진공학회지
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• 제19권3호
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• pp.83-88
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• 2015

열차폐 코팅(Thermal Barrier Coating) 기술의 하나로 연구되는 전자빔(EB, Electron Beam) 증착에 사용되는 코팅재료는 증착 공정 중에 고출력의 전자빔이 조사되기 때문에, 균일코팅을 위해서는 증착 중 코팅재료의 형상유지 및 안정한 융탕 형성이 필요하며, 이를 위해 적절한 밀도와 미세구조를 갖춘 잉곳(Ingot) 형태의 코팅소스가 요구된다. 본 연구에서는 8 wt%의 이트리아($Y_2O_3$)가 안정화제로 첨가된 지르코니아(8YSZ) 조성을 활용하여, 고출력 전자빔 조사환경에 사용가능한 잉곳제조를 위해 최적의 원료분말 조건을 확보하고자 하였다. 제조된 잉곳시료들에 대한 전자빔 조사 시, 수십 마이크론과 수십 나노 크기의 입자들로 구성된 혼합형 분말로 제조된 잉곳의 경우, 나노크기의 분말만으로 제조된 경우보다 향상된 열충격 저항성을 보였다.

• 한국염색가공학회지
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• 제29권1호
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• pp.18-24
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• 2017

Meta-aramid fabric has been widely used as the reinforcement of composites due to its high flame resistance and tearing strength. Functionality such as abrasion resistance of fabric is very important for specialty fabrics used in car racing suits. In this study, to improve abrasion resistance property of meta-aramid fabric, silicon deposition was conducted by utilizing RF magnetron sputtering. The sputtering process parameters effects were investigated as sputtering power and substrate temperature. The obtained results suggest that the silicon deposition on the meta-aramid fabric has obvious effect upon increasing the abrasion resistance, the thermal insulation and the electric resistance condition for silicon deposition was established. In conclusion, the results of this study have made it possible to manufacture meta-aramids with higher abrasion strength.

• 한국결정학회지
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• 제2권2호
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• pp.1-6
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• 1991

RF 마그네트론 스퍼터링법을 이용하여 ZnO 박 막을 실리콘 기판과 Corning 7059유리 기판위에 증착시켜 증착변수에 따른 ZnO 박막의 구조적, 전기적, 광학적 특성을 분석하였다. 1 전력을 증가시킴에 따라 c축 배향성이 뛰어난 ZnO 박막을 얻을 수 있었으며, 2가 34.4인 피크의 X·ray rocking curve표준 편차 값은 6.8-7.2˚사이에 있었다. 유리 기판위에 증착된 ZnO 박막은 가시광선 영역에서 실험조건에 관계없이 80% 이상의 높은 투광도를 갖고 있었다. ZnO박막의 비저항 값은 증착 변수인 rf전력과 Ar압력에 의해 심한 영향을 받고 있었으며 3×102-2×109 Ω·cm의 비저항 영역을 갖고 있었다.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2003년도 The Fifth Asian Computational Fluid Dynamics Conference
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• pp.113-115
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• 2003

Droplet impinging into a cavity at micro-scale is one of important fluidic issues for microfabrications, e.g. bio-chip applications and inkjet deposition processes in the PLED panel manufacturing. The droplets generally dispensing from an inkjet head, which contains an array of nozzles, have a volume in several picoliters, while each nozzle jets the droplets into cavities with micron-meter size located on substrates. Due to measurement difficulties at micro-scale, the numerical simulation could serve as an efficient and preliminary way to evaluate the micro-sized droplet impinging behavior into a cavity. The micro-fluidic flow is computed by solving the three-dimensional Navier-Stokes equations through a finite volume discretization. The droplet front is predicted by a volume-of-fluid approach, in which the surface tension is modeled as a function of the fluid concentration. This paper discusses the influence of fluid properties, such as surface tension and fluid viscosity, on micro-fluidic characteristics at different jetting speeds in the deposition process via the proposed numerical approach.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권8호
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• pp.319-324
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• 2003

AIN thin films are deposited on Si (100) and $SiO_2$/Si substrates by using an RF magnetron sputtering method and by changing the conditions of deposition variables, such as RF power, $N_2$/Ar flow ratio, and substrate temperature ($T_sub$). For all the deposited AIN films, XRD Peak patterns are monitored to examine the effect of deposition condition on the crystal orientation. Highly (002)-oriented AIN films are obtained at following nominal deposition conditions; RF Power : 350W, $N_2$/Ar ratio = 10/20, T$_{sub}$ : $250^{\circ}C$, and working pressure = 5mTorr, respectively. AIN-based SAW devices are fabricated using a lift-off method by varying the thickness of AIN layer. Insertion losses and side-lobe rejection levels of fabricated SAW devices are extracted from their frequency response characteristics, which are also compared in terms of AIN thickness and substrate. Relationships between the film properties of AIN films and the frequency responses of SAW devices are discussed. It is concluded from the experimental results that the (002)-preferred orientation as well as the surface roughness of AIN film may play a crucial role of determining the device performances of AIN-SAW devices.s.

• 한국분말재료학회지
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• 제29권1호
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• pp.8-13
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• 2022

In this study, we have prepared a Ti-6Al-4V/V/17-4 PH composite structure via a direct energy deposition process, and analyzed the interfaces using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The joint interfaces comprise two zones, one being a mixed zone in which V and 17-4PH are partially mixed and another being a fusion zone in the 17-4PH region which consists of Fe+FeV. It is observed that the power of the laser used in the deposition process affects the thickness of the mixed zone. When a 210 W laser is used, the thickness of the mixed zone is wider than that obtained using a 150 W laser, and the interface resembles a serrated shape. Moreover, irrespective of the laser power used, the expected σ phase is found to be absent in the V/17-4 PH stainless steel joint; however, many VN precipitates are observed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권2호
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• pp.49-56
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• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.41-45
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• 2007

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.

• Korean Journal of Chemical Engineering
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• 제35권12호
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• pp.2474-2479
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• 2018

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel ($Ni(EtCp)_2$) and $O_2$ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, $O_2$ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of $100-325^{\circ}C$ and a growth rate of $0.037{\pm}0.002nm$ per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.