• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1211-1214
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• 2003

The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH$_4$ and H$_2$ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and In-situ thermal treatment temperature. The structure of a-C:H (hydrogenated amorphous carbon) thin film is analysed by FT-IR spectroscopy. The fraction sp$^3$ versus sp$^2$ bonding is very important to clear up the surface and interrace of a-C:H film properties such as nano-scale friction behavior. The sp$^3$ versus sp$^2$ bonding of a-C:H thin film is dependent on the deposition conditions, therefore. nano-scale friction behavior is dependent on the deposition conditions.

• Journal of the Korean Society for Heat Treatment
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• v.5 no.2
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• pp.95-102
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• 1992

In this study, we tried to describe the quantitative model of TiN film structure which was deposited by PECVD process. The macro-grain growth behavior was studied at the various deposition pressures and times. As a result, It was confirmed that TiN films had the typical Zone 1 structure, and macro-columnar grains were, without reference to the deposition pressure, grown ballistic type by the growth-death competition following the equation, $Y=aX^2$, approximately obtained by regression analysis. Also, the thickness and the crystallization of TiN thin films were increased, the chlorine contents were decreased according to the decreasing of deposition pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.89-92
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• 2003

ITO thin films were deposited by RF-magnetron sputtering method and crystallization behavior of the films with and without external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed. Because RF-sputtering transfers the high-energy to the growing film by energetic bombardment, it is believed that considerable activation energy for the crystallization of the film has transferred during deposition, which resulted in the crystallization of ITO thin films without external energy supply.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.12
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• pp.963-969
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• 2008

The performance behavior of solid oxide fuel cell using $H_2$ and CO as fuels was investigated. The power densities and impedance results showed a little variation as the ratio of $H_2$ and CO changed. However, when the pure CO was used as a fuel, area specific resistance (ASR), especially low frequency region, was increased. This might be due to carbon deposition on anode. The maximum power density was 60% lower using CO than using $H_2$. Carbon deposition reduced after constant current was applied. The SOFC performance was recovered from the carbon deposition after applying constant current during 100h.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2002.05a
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• pp.95-100
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• 2002

This study was experimentally performed to investigate flow characteristics of spray droplets in the wind tunnel. Behavior of the spray droplets in the pipe was observed and the deposition rate of droplets on the surface of pipe as liquid film was measured. The experiments were carried out for a variety of parameter, such as velocity of feed air, spray angle of nozzle, and diameter of droplet. From the visual observation of the spray droplets in the pipe and the measurement of deposition rate on the pipe, the general understanding of droplets behavior for desuperheater was provided.

• Tribology and Lubricants
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• v.11 no.1
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• pp.37-43
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• 1995

Sputtering parameters such as N$_{2}$ flow percentage and bias voltage in reactive TiN film deposition by RF magnetron sputtering system were selected to investigate the effects of sputtering deposition conditions on tribological characteristics of TiN films. Wear scar of the steel ball damaged by TiN films was measured by SEM to understand wear behavior of deposited TiN films. Crystallization and induced strain of TiN were detected by XRD. Wear mode changed from plastic to brittle with increasing N$_{2}$ ratio. Wear scar by sliding with TiN film deposited at around 27% N$_{2}$ ratio was maximum. The results indicate that bias voltage affects tribological behavior by formation of high density film and internal stress.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.822-825
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• 2003

Indium tin oxide (ITO) thin films were deposited by RF-magnetron sputtering method and the crystallization behavior of the films with no external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.255-260
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• 1998

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.692-693
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• 2006

Behavior of stoichiometric and near-stoichiometric NiAl at plasma spray deposition, without and with a bond coat, for coating layers realization on a low alloyed steel substrate, has been investigated. In all variants, NiAl particle melting and subsequent welding at the impact with substrate were observed, forming a relatively compact and adherent coating layer with the NiAl stability maintaining - all assuring the coating layer oxidation and corrosion resistance. Good results from these points of view, also validated through corrosion tests, were obtained for 45:55 Ni:Al composition without a bond coat but adopting an Ar protective surrounding of plasma jet.