• Title/Summary/Keyword: deposition area

검색결과 1,129건 처리시간 0.038초

난지도 지역의 대기수은 지화학 (Geochemistry of Total Gaseous Mercury in Nan-Ji-Do, Seoul, Korea)

  • 김민영;이강웅;신재영;김기현
    • 한국지구과학회지
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    • 제21권5호
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    • pp.611-622
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    • 2000
  • 대규모 면오염원으로 간주되는 난지도지역을 중심으로 2000년 봄 기간중 대기-지표간 수은의 교환율을 측정하고, 측정자료를 기초로 수은의 교환현상을 분석하였다. 측정결과에 의하면 난지도지역은 대규모 면오염원으로 대량의 수은을 배출할 뿐아니라 동시에 대규모의 침적을 경험하는 것으로 나타났다. 일주기별로 농도, 농도구배, 플럭스의 절대치를 분석한 결과 대규모 배출과 침적은 오후시간대에 왕성하게 진행되는 것으로 나타났다. 그러나 이들의 발생빈도에 대한 분석결과는 배출이 새벽 또는 저녁에 빈번하게 발생하는데 비해, 침적은 주로 오후시간대에 집중된다는 것을 확인하였다. 풍향대별로 발생빈도와 교환율을 비교한 바에 따르면, 대규모 침적을 유도하는 외부배출원이 동쪽지역에 위치해 있다는 것을 추정할 수 있었다. 특정 풍향에서 침적이 집중된 점을 감안하여, 침적이 집중된 방향의 자료군과 배출이 지배적으로 발견된 전체자료를 이용하여 조건별 환경인자의 변화동향을 배출/침적비로 환산하여 비교하였다. 그 결과 대부분의 오염인자들의 농도는 외부여건에 따라 규칙적인 변화양상을 보여주었다. 상관분석의 결과는 이들의 거동이 교환현상의 수직적인 방향-침적 또는 배출-의영향을 민감하게 반영하는 것으로 나타났다. 요인분석의 결과는 배출시에 기온과 같은 요인에 의해 유도되는 부분이 그리고 침적시에는 기온, 오존, 비메탄계 탄화수소와 같이 외부인자의 영향을 반영하는 요인들이 복합적으로 중요하게 작용할 수 있다는 점을 시사하였다. 난지도지역을 중심으로 한 수은의 자료를 추정한 결과 연간규모로 약 6kg의 수은이 배출되는 것으로 나타났다.

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분무증착에서 균일 박막형성을 위한 전산모사 (Numerical Simulation for Generation of Homogeneous Thin-Film in Spray Deposition)

  • 정흥철;고선미;최경민;김덕줄
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회B
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    • pp.2702-2707
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    • 2007
  • The purpose of this study is to calculate the behavior of molecules for the generation of homogeneous thin-films in the process of spray deposition. The calculation system was composed of a suface molecular region and droplet molecular region. The thin-film was generated when droplet molecules fell to surface molecules. Lennard-Jones potential had been used as intermolecular potential, and only attraction 때 d repulsion had been used for the behavior of the droplet on the solid surface. As results, the behavior of the droplet was so much influenced by the surface temperature in the spray deposition process. High temperature of surface has higher porosity and larger spread area. It was found that simulation results generally agreed well with previous the experimental results. This simulation result will be the foundation for the deposition processes of industry.

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Fabrication of Metal-Semiconductor Interface in Porous Silicon and Its Photoelectrochemical Hydrogen Production

  • Oh, Il-Whan;Kye, Joo-Hong;Hwang, Seong-Pil
    • Bulletin of the Korean Chemical Society
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    • 제32권12호
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    • pp.4392-4396
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    • 2011
  • Porous silicon with a complex network of nanopores is utilized for photoelectrochemical energy conversion. A novel electroless Pt deposition onto porous silicon is investigated in the context of photoelectrochemical hydrogen generation. The electroless Pt deposition is shown to improve the characteristics of the PS photoelectrode toward photoelectrochemical $H^+$ reduction, though excessive Pt deposition leads to decrease of photocurrent. Furthermore, it is found that a thin layer (< 10 ${\mu}m$) of porous silicon can serve as anti-reflection layer for the underlying Si substrate, improving photocurrent by reducing photon reflection at the Si/liquid interface. However, as the thickness of the porous silicon increases, the surface recombination on the dramatically increased interface area of the porous silicon begins to dominate, diminishing the photocurrent.

Annealing Effect on Structural, Electrical and Optical Properties of CdS Films Prepared by CBD Method

  • Haider, Adawiya J.;Mousa, Ali M.;Al-Jawad, Selma M.H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권4호
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    • pp.326-332
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    • 2008
  • In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.

중.저온형 고체산화물 연료전지에서 연료로 공급되는 CO 와 H2 가 성능에 미치는 영향 (Performance Behavior by H2 and CO as a Fuel in Intermediate Temperature Solid Oxide Fuel Cell (IT-SOFC))

  • 박광진;배중면
    • 대한기계학회논문집B
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    • 제32권12호
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    • pp.963-969
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    • 2008
  • The performance behavior of solid oxide fuel cell using $H_2$ and CO as fuels was investigated. The power densities and impedance results showed a little variation as the ratio of $H_2$ and CO changed. However, when the pure CO was used as a fuel, area specific resistance (ASR), especially low frequency region, was increased. This might be due to carbon deposition on anode. The maximum power density was 60% lower using CO than using $H_2$. Carbon deposition reduced after constant current was applied. The SOFC performance was recovered from the carbon deposition after applying constant current during 100h.

Epitaxial Growth of Polyurea Film by Molecular Layer Deposition

  • 최성은;강은지;이진석
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.264.2-264.2
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    • 2013
  • Molecular layer deposition (MLD) is sequential, self-limiting surface reaction to form conformal and ultrathin polymer film. This technique generally uses bifunctional precursors for stepwise sequential surface reaction and entirely organic polymer films. Also, in comparison with solution-based technique, because MLD is vapor-phase deposition based on ALD, it allows epitaxial growth of molecular layer on substrate and is especially good for surface reaction or coating of nanostructure such as nanopore, nanochannel, nanwire array and so on. In this study, polyurea film that consisted of phenylenediisocyanate and phenylenediamine was formed by MLD technique. In situ Fourier Transform Infrared (FTIR) measurement on high surface area SiO2 substrate was used to monitor the growth of polyurethane and polyurea film. Also, to investigate orientation of chemical bonding formed polymer film, plan-polarized grazing angle FTIR spectroscopy was used and it showed epitaxial growth and uniform orientation of chemical bones of polyurea films.

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대면적화된 마이크로파 플라즈마를 이용하여 실리콘 웨이퍼에 증착한 다결정 실리콘의 특성 연구 (Characteristics of Polysilicon Films Deposited on Silicon Wafers with Enlarged Microwave Plasma)

  • 류근걸
    • 한국재료학회지
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    • 제9권6호
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    • pp.604-608
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    • 1999
  • Semiconductor industry requires the development of new technology such as 300 mm technology, suitable for manufacturing the next generation dervices. A promising process for realizing 300 mm technology can be achieved by using enlarged microwave plasma chemical vapor deposition (MWCVD) technology. In this work, we used radial line slot antenna for enlarging microwave plasma area, and carried ut the deposition of polysilicon films using enlarged MWCVD for the first time in Korea. The results was as follows. Deposited polysilicon films showed various degrees of crystallinity as well as epitaxy to silicon substrates even at low temperature of $300^{\circ}C$. Deposition rates also controled crystallization behavior and slo deposition rates showed very high crystallinity. It could be said that enlarged MWCVD system and technology was worth to get attraction as one os future technologies for 1 G DRAM era.

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The Low Resistivity Gate Metals Formation of Thin Film Transistors by Selective CVD

  • Park, S.J.;Bae, N.J.;Kim, S.H.;Shin, H.K.;Choi, J.S.;Yee, J.G.;Choi, S.Y.
    • 한국진공학회지
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    • 제4권S1호
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    • pp.108-112
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    • 1995
  • Copper and aluminum selective deposition using (hfac)Cu(VTMS) and DMEAA precursors were performed in a warm-wall low pressure chemical vapour deposition reactor. The films of Cu and AI deposited on Corning 7059 glass and quartz with pattern of Cr seed metal. Selective deposition can be achieved at a pressure range of from 10-1 to 10 torr and substrate temperature range of 150-25$0^{\circ}C$. Selective deposition of Cu and AI by CVD is one of candidate for gate material formation fo larger area and high resolution plat panel displays.

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2011년 기리시마 화산 분화에 따른 화산재 이동 및 침적에 관한 수치모의실험 (Numerical Simulation of Volcanic Ash Dispersion and Deposition during 2011 Eruption of Mt. Kirishima)

  • 이순환;장은숙;윤성효
    • 한국지구과학회지
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    • 제35권4호
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    • pp.237-248
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    • 2014
  • 화산재의 확산 특성을 분석하고, 침적량의 예측 가능성을 평가하기 위하여, 2011년 1월26일 분화가 시작된 일본 기리시마 화산을 대상으로 WRF와 확산모형 FLEXPART를 이용한 수치모의실험을 실시하였다. 지상 1 km 이하 대기경계층내의 화산재 확산 특성은 26일 방출된 입자의 경우 주풍을 따라 집중되는 경향을 보이지만, 27일 방출된 화산재는 큐슈남부에 발달한 고기압의 영향으로 기리시마 만까지 확산된다. 겨울철의 강한 시베리아 기단이 발달한 26일의 경우, 기리시마 화산 풍하측에 위치한 미야기 현 중앙 산악 후면의 좁은 영역에서 집중적으로 침적이 이루어진다. 또한 분화 지역 주변의 국지적인 고기압의 발달은 화산재의 수평 확산을 증대시키는 역할을 한다. 침적량의 분포는 정량적인 측면에서 실제 화산 분출에 따른 영향과 매우 유사한 경향성을 보이고, 제시한 수치모의실험은 화산재의 이동 및 침적량 예측 및 산정에 적절하다고 판단된다.

생체 지질막의 $\pi$-A 특성 및 누적 상태 ($\pi$-A Characteristics and Deposition Status of Biological Lipid Layers)

  • 최용성;박만철;권영수;장정수;배진호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.860-863
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    • 1992
  • In this paper, we investigate $\pi$-A isotherms of biological lipid layer such as cholesterol and phosphatidyl choline to study a gas sensor characteristics which response only to specific materials. And, we also deposit it on the surface of quartz crystal by vertical dipping method and horizontal lifting method. Then, we evaluate the deposition status of cholesterol and phosphatidyl choline LB film using AT-cut quartz crystal. We obtain the following results: (1) Cholesterol's solid surface pressure is about 20$\sim$40(dyne/cm) and limiting area is about 50${\AA}^2$/molecule. And, phosphatidyl choline's surface pressure is about 25$\sim$40(dyne/cm) and limiting area is about 20 ${\AA}^2$/molecule. (2) When LB films are deposited, the deposition ratio is coincident with the frequency shift. Therefore, we can evaluate the deposition status of LB film. (3) For cholesterol, Y type LB films are deposited up to 15 layers by vertical dipping method. (4) For phosphatidyl choline, X typo LB films are deposited to 15 layers by horizontal lifting method. But, in case of vertical dipping method, the deposition status is not good.

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