• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.401-406
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• 2018

We investigated the effect of ZnO seed layer thickness on the density of ZnO nanorod arrays. ZnO has been deposited using two distinct processes consisting of the seed layer deposition using ALD and subsequent hydrothermal ZnO growth. Due to the coexistence of the growth and dissociation during ZnO hydrothermal growth process on the seed layer, the thickness of seed layer plays a critical role in determining the nanorod growth and morphology. The optimized thickness resulted in the regular ZnO nanorod growth. Moreover, the introduction of ALD to form the seed layer facilitates the growth of the nanorods on ultrathin seed layer and enables the densification of nanorods with a narrow change in the seed layer thickness. This study demonstrates that ALD technique can produce densely packed, virtually defect-free, and highly uniform seed layers and two distinctive processes may form ZnO as the final product via the initial nucleation step consisting of the reaction between $Zn^{2+}$ ions from respective zinc precursors and $OH^-$ ions from $H_2O$.

• 한국패류학회지
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• 제11권1호
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• pp.70-77
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• 1995

The purpose of this study is to determine the differences of the conchiolin layer, prismatic layer and nacreous layer deposited within the shell of the freshwater family Unionidae. shether they possess species-specific characteristics and differences of the microstructure of these layers, A Scanning electron microscopic obwervations were conducted on seven species. The results indicate that all species possess thin and homogeneous layers within the periostracum. The prismatic layers of these species were composed of ednsely packed prisms. The prismatic layers of the shell in six species were typical shape of prisms. especially Inio douglasiae and Lamprotual gottschei. But, in Unio douglasiae sinuolatus, it was irregular and oblique prism shape.The nacreous layer of weven unionids characterized by possession of three types by lamillae shape: thin and homogeneous on genus Anodonta(0.4 pm size of lamella), Unio(1.3pm) and Lamprotual (1.7pm), homogeneous in shape and irregular in size of lamillae in Lanceolaria(1.0 pm)and irregulat in shape and size in Solenaia(0.2-0.4 pm). The microstructure of the naceous layer may be useful as a taxonomic character at the generic level.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.178.1-178.1
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• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• Journal of Microbiology and Biotechnology
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• 제14권5호
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• pp.1043-1046
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• 2004

The stability and electrochemical properties of a self-assembled layer of spinach ferredoxin on a quartz substrate and on a highly oriented pyrolytic graphite electrode were investigated. To fabricate the ferredoxin self-assembly layer, dimyristoylphosphatidylcholine was first deposited onto a substrate for ferredoxin immobilization. Surface analysis of the ferredoxin layer was carried out by atomic force microscopy to verify the ferredoxin immobilization. To verify ferredoxin immobilization on the lipid layer and to confirm the maintenance of redox activity, absorption spectrum measurement was carried out. Finally, cyclic-voltammetry measurements were performed on the ferredoxin layers and the redox potentials were obtained. The redox potential of immobilized ferredoxin had a formal potential value of -540 mV. It is suggested that the redox-potential measurement of self-assembled ferredoxin molecules could be used to construct a biosensor and biodevice.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1057-1059
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• 2002

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.313-314
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• 2006

In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated Results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) application.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.65-69
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• 2002

An Al film deposited on the Kovar alloy substrate was anodically-bonded to the borosilicate glass, and the bond interfaces was closely investigated by transmission electron microscopy. Al oxide was found to form a layer ~l0 nm thick at the bond interface, and fibrous structure of the same oxide was found to grow epitaxially in the glass from the oxide layer. The fibrous structure grew with the bonding time. The mechanism of the formation of this fibrous structure is proposed on the basis of the migration of Al ions under the electric field. Penetration of Al into glass beyond the interfacial Al oxide was not detected. The comparison of the amount of excess oxygen ions generated in the alkali depletion layer with that incorporated in the Al oxide suggests that the growth of the alkali-ion depletion layer is controlled by the consumption of excess oxygen to form the interfacial Al oxide.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.51-54
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• 2002

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1185-1188
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• 2006

Pentacene thin film transistors (OTFTs) on flexible polyimide substrate using electroplated gate electrode and organic/high-k inorganic bilayer gate dielectric layer. Incorporation of thin atomic-layer deposited $HfO_2$ layer on the PVP organic gate dielectric layer reduced the gate leakage and as a result enhanced the current on/off ratio.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.885-886
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• 2003

A bilayer is used as an anode electrode for organic electroluminescent devices. The bilayer consist of an ultrathjn ZnO layer adjacent to an hole-transporting layer and an Indium tin oxide(ITO) outerlayer. We tried to bring low the barrier between the devices as deposited ZnO films on ITO substrates. We fabricated the organic EL structure consisted of Al as cathode, $Al_{2}O_{3}$ as electro transport layer, Alq3 as luminously layer, triphenyl diamine(TPD) as hole transport layer and ZnO(l nm )/ITO(l50 nm) as anode. The result of this experiment was not good compared with the case of using ITO, Nevertheless, at this structure we obtained the lowest turn-on voltage as the value of 19 V and the good brightness (6200 $cd/m^{2}$) of the emission light from the devices. Then the quantum efficiency was to be 1.0%.