• 한국진공학회지
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• 제13권3호
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• pp.109-113
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• 2004

InP에서 열처리 온도와 시간 및 활성화 온도에 따른 Zn의 확산의 특성을 electrochemical capacitance-voltage 법으로 조사하였다. InP층은 metal organic chemical vapor deposition를 이용하여 성장하였으며, 화산방법으로는 $Zn_3P_2$ 확산과 박막과 rapid thermal annealing를 사용하였다. 최대의 정공 농도를 갖는 p-lnP 층은 $550^{\circ}C$에서 5분 동안 확산과 활성화를 한 시료에서 얻었고, Zn의 농도는 $1\times10^{19}\textrm{cm}^{-3}$이었다. $550^{\circ}C$에서 5-20 분 동안 확산을 수행한 결과 정공농도의 확산 깊이는 1.51 $\mu\textrm{m}$에서 3.23 $\mu\textrm{m}$로 이동하였고, Zn의 확산계수는 $5.4\times10^{-11}\textrm{cm}^2$/sec이었다. 활성화 시간의 증가로, Zn가 더 깊게 확산하지만, 정공농도는 거의 변화가 없었다. 이는 도핑된 영역의 과잉의 침입형 Zn가 도핑되지 않은 영역으로 빠르게 확산하고 치환형 Zn로 변한다는 것을 의미한다. 정공농도는 $SiO_2$ 박막의 두께가 1,000$\AA$ 이상이어야 안정적으로 분포된다.

• 한국진공학회지
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• 제6권1호
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• pp.28-35
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• 1997

급속열처리에 따른 (hfac)Cu(VTMS)구리원으로 증착한 구리 박막의 특성개선 효과 와 TiN층의 확산방지 특성의 변화를 고찰하였다. 구리 박막의 특성 변화는 열처리 시간보 다 열처리 온도의 변화에 더 민감하며, 후열처리에 의해 Cu/TiN구조의 전기적 특성과 더불 어 미세구조 변화가 뚜렷하게 나타났다. $400^{\circ}C$이상에서 면저항의 증가가 시작되어 $600^{\circ}C$이 상에서 구리와 TiN의 상호 반응과 구리박막 표면에서의 산화물 형성이 관찰되었다. 후열처 리에 의한 결정립 성장은 (111)배향을 나타내었고, $500^{\circ}C$에서 결정립의 성장이 가장 활발하 게 나타났다. MOCVD-Cu/PVD-TiN구조에서 TiN층의 확산방지 특성을 충분히 유지시키면 서 구리 박막의 전기적 특성을 개선시킬 수 있는 열처리 공정 온도는 $400^{\circ}C$정도가 적정한 것으로 판단되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.316-316
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• 2010

Thin films spin-coated from solvent solutions are characterized by solution parameters and spin-coating process. In this study, performance characteristics of polymer solar cells were investigated with changing solution parameters such as solvent and additives. The phase-separation between polymer and fullerene is needed to make the percolation pathway for better transportation of hole and electron in polymer solar cells. For this reason, cooperative effects of solvent mixtures adding additives with distinct solubility have been studied recently. In this study, chlorobezene, 1, 2-dichlorbenzene, and chloroform were used as solvent. 1, 8-diiodoctaned and 1, 8-octanedithiol were used as additives and were added into poly(3-hexylthiophene-2, 5-diyl)/[6, 6]-phenyl C61 butyric acid methyl ester (P3HT/PCBM) blends. Pre-patterned ITO glass was cleaned using ultrasonication in mixed solvent with ethyl alcohol, isopropyl alcohol and acetone. PEDOT:PSS was spin-coated on to the ITO substrate at 3000rpm and was baked at $120^{\circ}C$ for 10min on the hotplate. The prepared solution was spin-coated at 1000rpm and the spin-coated thin film was dried in the Petri dishes. Al electrode was deposited on the thin film by thermal evaporation. The devices were annealed at $120^{\circ}C$ for 30min. By adding 2.5 volume percent of additives into the chlorobenzene from that bulk heterojunction films consisting of P3HT/PCBM, the power efficiency (AM 1.5G conditions) was increased from 2.16% to 2.69% and 3.12% respectively. We have investigated the effect of additives in P3HT/PCBM blends and the film characteristics and the film characteristics including J-V characteristics, absorption, photoluminescence, X-ray diffraction, and atomic force microscopy to mainly depict the morphology control by doping additives.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.89-89
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• 2010

The atomic structure of Sb/Si(5 5 12)-$2{\times}1$ surface, deposited at room temperature (RT) and post-annealed, has been identified by scanning tunneling microscopy and the corresponding interface has been studied by synchrotron core-level photoemission spectroscopy. With 0.3-nm Sb deposition at RT and postannealing at $600^{\circ}C$, the surface has been facetted to (225)-$2{\times}1$ and (112)-$1{\times}1$, and its Si 2p has shown that all the Si 2p surface components have disappeared, while the single Sb-Si interfacial component has appeared. Such results indicate that all of surface Si atoms are replaced by Sb atoms and the charge is transferred from Si to passivating Sb-atoms at the top layer. With subsequent postannealing up to $700^{\circ}C$, the surface has been facetted to (113)-$2{\times}2$ and (335)-$4{\times}2$, still having Sb-Si interfacial component and partially re-exposed Si surface components. From the present study, the role of surfactant atom, Sb, as well as the thermal-stabilization of Sb-passivated high-index Si surface will be exposed. Especially, the key role of the Sb/Si(113)-$2{\times}2$, composed of Rebonded-Dimer-Rebonded atom 1D structures, for stabilization will be discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.128-128
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• 2012

We investigated the atomic and electronic properties of graphene grown by Pd silicidation and intercalation using LEED, STM, and ARPES. Pd was deposited on the 6H-SiC(0001) surface at RT. The formation of Pd silicide gives rise to breaking of Si-C bonds of the SiC crystal, which enables to release C atoms at low temperature. The C atoms are transformed into graphene from $860^{\circ}C$ according to the LEED patterns as a function of annealing temperature. Even though the graphene spots were observed in the LEED pattern and the Fourier transformed STM images after annealing at $870^{\circ}C$, the topography images showed various superstructures so that graphene is covered with Pd silicide residue. After annealing at $950^{\circ}C$, monolayer graphene was revealed at the surface. The growth of graphene is not limited by surface obstacles such as steps and defects. In addition, we observed that six protrusions consisting of the honeycomb network of graphene has same intensity meaning non-broken AB-symmetry of graphene. The ARPES results in the vicinity of K point showed the non-doped linear ${\pi}$ band structure indicating monolayer graphene decoupled from the SiC substrate electronically. Note that the charge neutrality of graphene grown by Pd silicidation and intercalation was sustained regardless of annealing temperature in contrast with quasi-free- standing graphene induced by H and Au intercalation. Further annealing above $1,000^{\circ}C$ accelerates sublimation of the Pd silicide layer underneath graphene. This results in appearance of the $(6r3x6r3)R30^{\circ}$ structure and dissolution of the ${\pi}$ bands for quasi-free-standing graphene.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.158-158
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• 2011

$Cu(In_xGa_{1-x})Se_2$ (CIGS) thin film solar cell is one of the most promising solar cells in photovoltaic devices. CIGS has a direct band gap which varied from 1.0 to 1.26 eV, depending on the Ga to In ratio. Also, CIGS has been studying for an absorber in thin film solar cells due to their highest absorption coefficient which is $1{\times}10^5cm^{-1}$ and good stability for deposition process at high temperature of $450{\sim}590^{\circ}C$. Currently, the highest efficiency of CIGS thin film solar cell is approximately 20.3%, which is closely approaching to the efficiency of poly-silicon solar cell. The deposition technique is one of the most important points in preparing CIGS thin film solar cells. Among the various deposition techniques, the sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have been prepared by rf magnetron sputtering method using a single target. The optical and structural properties of CIGS films are generally dependent on deposition parameters. Therefore, we will explore the influence of deposition power on the properties of CIGS films and the films will be deposited by rf magnetron sputtering using CIGS single target on Mo coated soda lime glass at $500^{\circ}C$. The thickness of CIGS films will be measured by Tencor-P1 profiler. The optical properties will be measured by UV-visible spectroscopy. The crystal structure will be analyzed using X-ray diffraction (XRD). Finally the optimal deposition conditions for CIGS thin films will be developed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• 분석과학
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• 제6권2호
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• pp.217-223
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• 1993

저항가열식 진공중착기를 이용하여 실온(ambient temp.)과 $250^{\circ}C$에서 알루미나 기판 위에 Au/Cr, Au/Ni/Cr 및 Au/Pd/Cr 박막을 제조하였으며, 공기 중에서 $300^{\circ}C$, $450^{\circ}C$, $600^{\circ}C$의 온도로 각각 1시간 동안 열처리하였다. Au, Ni(또는 Pd) 및 Cr 박막의 두께는 각각 $1000{\AA}$, $300{\AA}$, 및 $50{\AA}$이었다. 박막 제조시 기판의 온도와 박막 제조 후 열처리 온도는 각 층의 상호확산으로 인하여 박막의 면저항값에 영향을 주었다. Auger depth profile 분석결과, Au/Cr 시스템에서는 기판의 온도는 $250^{\circ}C$로 하여 박막을 제조할 때 이미 Cr은 Au 표면으로 확산되었으며, 열처리 후에는 Au의 분포도만 변화하였다. Au/Ni/Cr과 Au/Pd/Cr 시스템의 경우 Ni와 Pd 모두 확산현상이 발견되었으며, 특히 Ni(약 45 at.%)는 Au 박막 표면으로 확산되어 산화되었다.

• 센서학회지
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• 제22권2호
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• pp.144-149
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• 2013

In this research, we developed a biosensor to detect lung cancer-specific biomarker using Anodic Aluminum Oxide (AAO) chip based on interference and nano surface plasmon resonance (nanoSPR). The nano-porous AAO chip was fabricated $2{\mu}m$ of pore-depth by two-step anodizing method for surface uniformity. NanoSPR has sensitivity to the refractive index (RI) of the surrounding medium and also provides simple and label-free detection when specific antibodies are immobilized to the Au-deposited surface of nano-porous AAO chip. To detect the lung cancer-specific biomarker, antibodies were immobilized on the surface of the chip by Self Assembled Monolayer (SAM) method. Since then lung cancer-specific biomarker was applied atop the antibodies immobilized layer. The specific reaction of the antigen-antibody contributed to the change in the refractive index that cause shift of resonance spectrum in the interference pattern. The Limit of Detection (LOD) was 1 fg/ml by using our nano-porous AAO biosensor chip.