• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.53-59
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• 2003

Using Platinum-silicide (PtSi) formed between silicon substrate and carbon film, we have improved the field emission of electrons from carbon films. Pt films were deposited on n-Si(100) substrates at room temperature by DC sputter technique. After deposition, these PtSi thin films were annealed at 400 ~ $600^{\circ}C$ in a vacuum chamber, and the carbon films were deposited on those Pt/Si substrates by laser ablation at room temperature. The field emission property of C/Pt/Si system is found to be better than that of C/Si system and it is showed that property was improved with increasing annealing temperature. The reasons why the field emission from carbon film was improved can be considered as follows, (1)the resistance of carbon films was decreased due to graphitization, (2)electric field concentration effectively occurred because the surface morphology of carbon film deposited on Pt/si substrates with rough surface, (3)it is showed that annealing induced reaction between Pt film and Si substrate, as a consequence that the interfacial resistance between Pt film and Si substrate was decreased.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.275-282
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• 2015

The cost for maintenance (replacement cost) of Ni-superalloy components in plant industry is very expensive because of high unit price of INCONEL 718. A development of repairing technology using kinetic spray process can be very helpful for reducing the maintenance cost. However, it is very difficult to produce well-deposited INCONEL 718 layer showing high interfacial bond strength via kinetic spraying. Thus, INCONEL 718 was deposited on SCM 440 substrate and the interfacial properties were investigated, in order to elucidate the cause of hindrance to the bonding between INCONEL 718 layer and SCM 440 substrate. As a result, it was revealed that the dominant obstacle to the interfacial bonding was excessive compressive residual stress accumulated in the coating layer, resulting from low plastic-deformation susceptibility of INCONEL 718. Nevertheless, the bonding state was enhanced by the post heat-treatment through relieving the residual stress and generating a diffusion/metallurgical bonding between the INCONEL 718 deposit and SCM 440 substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.150-155
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• 2004

This study attempts to form a TiN barrier layer against Cu diffusion by the easier and more convenient method. In this new approach, Ti was sputter-deposited, and nitrided by heat-treating in the NH$_3$ambient. Sheet resistance of as-deposited Ti was 20 Ω/$\square$, but increased to 195 Ω/$\square$ after the heat-treatment at 30$0^{\circ}C$, and lowered to 120 Ω/$\square$ after the heat-treatment at 50$0^{\circ}C$, and $600^{\circ}C$. AES results for these thin films confirmed that the atomic ratio of Ti and N was close to 1:1 at or above 40$0^{\circ}C$ heat-treatment. However, it was also found that excessive oxygen was contained in the TiN layer. To examine the barrier property against Cu diffusion, 100nm Cu was deposited on the TiN layer and then annealed at 40$0^{\circ}C$ for 40 min.. Cu remained at the surface without diffusing into the Si layer.

• Journal of the Korean institute of surface engineering
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• v.42 no.1
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• pp.21-25
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• 2009

Using an evaporation system, $SiO_2$ was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/$SiO_2$/PET layers were annealed for 1.5 hours at the temperature of $180^{\circ}C$. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a $SiO_2$ buffer layer. As a result of introduction of the $SiO_2$ buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance ($529.3{\Omega}/square$) for an upper ITO film of resistive type touch panel could be obtained when $SiO_2$ of $50{\AA}$ was deposited. And it was found that ITO films with $SiO_2$ buffer layer have higher transmittance of $88{\sim}90%$ at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as $SiO_2$ thickness increased from $50{\AA}$ to $100{\AA}$. Adhesion property of ITO films with $SiO_2$ buffer layers became better than ITO films with no buffer layers and this property was independent of $SiO_2$ thickness variance ($50{\sim}100{\AA}$). By depositing a $SiO_2$ buffer layer of $50{\AA}$ on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.125-125
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• 2011

In this study, we investigated the electrical, optical, structural, and surface properties of indium zinc oxide (IZO)/Ag/IZO multilayer electrode grown by specially designed roll-to-roll sputtering system using the flexible substrate. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO/Ag/IZO multilayer electrode. At optimized conditions, the bottom IZO layer (40 nm) was deposited on a flexible substrate. After deposition of the Bottom IZO layer, Ag layer was deposited onto the bottom IZO film as a function of DC power (200~500 W). Subsequently, the top IZO layer was deposited onto the Ag layer at identical deposition conditions to the bottom IZO layer (40 nm). We investigated the characteristics of IZO/Ag/IZO multilayer electrode as a function of Ag thickness. It was found that the electrical and optical properties of IZO/Ag/IZO multilayer electrode was mainly affected thickness of the Ag layer at optimized condition. In case of IZO/Ag/IZO multilayer electrode with the Ag power (350W), it exhibited a low sheet resistance of 7.1 ohm/square and a high transparency of 86.4%. Furthermore, we fabricated the touch screen panel using the IZO/Ag/IZO multilayer electrode, which demonstrate the possibility of the IZO/Ag/IZO multilayer electrode grown by roll-to-roll sputtering system as a transparent conducting layer in the touch screen panel.

• Journal of the Korean Ceramic Society
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• v.45 no.4
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• pp.245-249
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• 2008

The SiC and ZrC are critical and essential materials in TRISO coated fuel particles since they act as protective layers against diffusion of metallic and gaseous fission products and provides mechanical strength for the fuel particle. However, SiC and ZrC have critical disadvantage that SiC loses chemical integrity by thermal dissociation at high temperature and mechanical properties of ZrC are weaker than SiC. In order to complement these problems, we made new combinations of the coating layers that the ZrC layers composed of SiC. In this study, after Silicon carbide(SiC) were chemically vapor deposited on graphite substrate, Zirconium carbide(ZrC) were deposited on SiC/graphite substrate by using Zr reaction technology with Zr sponge materials. The different morphologies of sub-deposited SiC layers were correlated with microstructure, chemical composition and mechanical properties of deposited ZrC films. Relationships between deposition pressure and microstructure of deposited ZrC films were discussed. The deposited ZrC films on SiC of faceted structure with smaller grain size has better mechanical properties than deposited ZrC on another structure due to surface growth trend and microstructure of sub-deposited layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.290-293
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• 2015

The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.53.2-53.2
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• 2011

Dye-sensitized solar cells(DSSCs) have been recognized as an alternative to the conventional p-n junction solar cells because of their simple fabrication process, low production cost, and transparency. A typical DSSC consists of a transparent conductive oxide (TCO) electrode, a dye-sensitized oxide semiconductor nanoparticle layer, liquid redox electrolyte, and a Pt-counter electrode. In dye-sensitized solar cells, charge recombination processes at interfaces between coducting glass, $TiO_2$, dye, and electrolyte play an important role in limiting the photon-to-electron conversion efficiency. A layer of ZTO thin film less than ~200nm in thickness, as a blocking layer, was deposited by DC magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells(DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/I_3^-$). The presented DSCs were fabricated with working electrode of Ga-doped ZnO glass coated with blocking ZTO layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited GZO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.30-33
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• 2006

Transparent indium tin oxide (ITO) anode surface was modified using $O_3$ Plasma and organic ultrathin buffer layers were deposited on the ITO surface using 13.56 MHz RF plasma polymerization technique. The EL efficiency, operating voltage and lifetime of the organic light-emitting device (OLED) were investigated in order to study the effect of the plasma surface treatment and role of plasma polymerized organic ultrathin buffer layer. Poly methylmethacrylate (PMMA) layers were plasma polymerized on the ITO anode as buffer layer between anode and hole transport layer (HTL). The plasma polymerization of the organic ultrathin layer were carried out at a homemade capacitive-coupled RF plasma equipment. N,N'-diphenyl-N,N'(3- methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as HTL, Tris(8-hydroxyquinolinato) Aluminum $(Alq_3)$ as both emitting layer (EML)/electron transport layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Effects of the plasma surface treatment of ITO and plasma polymerized buffer layers on the OLED performance were discussed.