• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.156-162
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• 1995

For a stimulating neural electrode, the charge density should be as large as possible to provide adequate stimulation of the nervous system while allowing for miniaturization of the electrode. Since iridium oxide is able to produce high charge densities while preventing undesirable reactions due to charge storage, it has become a promising material for neural prostheses. Successful production of stable Ir and Ir oxide films on various substrates now limits the use of this material. Ir was deposited on two differently prepared surface of (mirror finish, passivation) surgical Ti-6AI-4V with several methods. Ion beam mixing of sputter deposited Ir films on passivated Ti-6AI-4V produced stable and good adherent Ir films. It was found that the increase in charge density of pure Ir on continuous cyclingis due to the accumulation of the oxide phase ( associated with a large surface area) in which the valence state of iridium changes and the double-layer capacitance increases. This study also showed that the double layer capacitance is equally or even more responsible for the high charge density of anodically formed Ir oxide.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.218-223
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• 1999

We investigated the interfacial reactions between the $Y_2O_3$ film deposited by ICB processing and p-type (100) Si substrates upon annealing treatments in $O_2$ and Ar gas ambients. we also investigated the evolution of surface morphology of ICB deposited $Y_2O_3$ films upon annealing treatments. We observed that the root-mean-square(RMS) value of surface roughness measured by AFM increased with annealing time at $800^{\circ}C$ in $O_2$ ambient, while the change of surface roughness was not observed in Ar ambient. We also found the growth of $SiO_2$ layer and the formation of yttium silicate layer. From the capacitance values $(C_{acc})$ measured by C-V measurements, the relative didldctric constant of $Y_2O_3$ film in metal-insulator-semiconductor(MIS) structure was estimated to be about 9.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.178-178
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• 2010

We have deposited aluminum-doped ZnO thin films on borosilicate glass by atomic layer deposition. Diethylzinc (DEZ) and dimethylaluminum isopropoxide (DMAIP) were used as the metal precursor and the Al-dopant, respectively. Water was used as an oxygen source. DMAIP was successfully used as an aluminum precursor for chemical vapor deposition and ALD. All deposited films showed n-type conduction. The resistivity decreased to a minimum and then increased with increasing the aluminum content. The carrier concentration increased and the carrier mobility decreased with increasing the DMAIP to DEZ pulse ratio. The average optical transmittance was nearly 80 % in the visible part of the spectrum. The absorption edge moved to the shorter wavelength region with increasing the DMAIP to DEZ pulse ratio. Our results indicate that DMAIP is suitable for Al doping of ZnO films.

• Transactions of the Korean hydrogen and new energy society
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• v.32 no.5
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• pp.410-416
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• 2021

The initial electrochemical performance of ceramic fuel cell with thin-film electrolyte was evaluated in terms of peak power density ratio, open circuit voltage ratio, and activation/ohmic resistance ratios at 500℃. Hydrogen and air were used as anode fuel and cathode fuel, respectively. The peak power density ratio reduced as ~17% for 40 minutes, which rapidly decreased in the early stage of the performance evaluation but gradually decreased. The open circuit voltage ratio decreased with respect time; however, its time behavior was remarkably different with the reduction behavior of the peak power density ratio. The activation resistance ratio increased as ~15% for 40 minutes, which was almost similar with the time behavior of the peak power density ratio.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.1-4
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Atomic layer deposition (ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. Moisture permeation has a mechanism to pass through defects, Thin Film Encapsulation using inorganic / organic / inorganic hybrid film has been used as promising technology. $Al_2O_3$ / Polymer / $Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1372-1375
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• 2007

MgO thin films were deposited by $O^+$ IBAD method and results showed assisting oxygen ion beam energy plays a significant role in characteristics of MgO thin films. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when oxygen ion beam energy was 300 eV.

• Journal of Information Display
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• v.5 no.4
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• pp.27-30
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• 2004

This paper investigates the effects of coating such as Invar (Fe-36% Ni), Fe-Ni Alloys and $WO_3$ on the doming property of aluminum killed (AK) shadow masks, which may be used for flat CPTs. Invar and Fe-Ni Alloys are deposited on AK shadow mask in plasma atmosphere and annealed. $WO_3$ is screen-printed on the deposited layer. The coating is observed to cause a decrease in the doming property of the shadow masks due to their lower thermal expansion coefficients and anti-doming properties.

• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.107-112
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• 2002

We have studied diffusion behavior of NiFe/Ag bilayer deposited by on silicon Ion Beam Sputtering methods. The diffusion behavior of NiFe and Ag in NiFe/Ag thin film is analyzed by Medium Energy Ion Scattering Spectroscopy. For samples without Ta underlayer, silicides such as Ni-Si or Fe-Si were formed at Si substrate and NiFe interface. In contrast, Ag predominantly diffused into the NiFe layer probably through their grain boundaries for Ta underlayered samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.320.1-320.1
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• 2013

We have investigated the effect of surface passivation for crystalline silicon solar cell using ozone-based atomic layer deposited (ALD) $Al_2O_3$. We examined passivation properties such as uniformity, carrier lifetime, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD). Ozone-based ALD $Al_2O_3$ film shows the best carrier lifetime at lower deposition temperature than $H_2O$-based ALD.

• Journal of The Geomorphological Association of Korea
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• v.23 no.2
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• pp.47-59
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• 2016

The formation age and depositional environment of the marine terrace I of the estimated paleoshoreline altitude of 18m in Sanhari of Ulsan coast, southeastern Korea were investigated on the basis of examination of lithofacies and stratigraphy of terrace deposits. Marine deposits of the terrace is composed of rounded boulders(70cm in diameter) and rounded pebbles(1.0cm in diameter) which overlay them. The above rounded boulders which lie on the paleo-shore platform are considered to have been formed by wave abrasion in the same period that the paleo-shore platform was developed. The rounded pebbles which lie on the rounded boulder layer are considered to have been deposited in gravel beach and berm environment, judging from the laminae developed in this layer. The paleo-shore platform and marine rounded gravel layer of the terrace are assumed to have been formed in the large transgression period of the Last Interglacial culmination stage(MIS 5e), judging from the comparision of the formation age of 125ka B.P. of Juckcheon terrace I in the adjacent Pohang coast which was dated by amino acid dating. The terrestrial deposit of this terrace was largely composed of angular and subangular gravel mixed with marine rounded pebble which has been carried away mainly from the deposit of previous marine terraces and redeposited in this terrace. The lowest peat layer of terrastrial deposit was considered to have been deposited during the period from the late MIS 5e which is the estimated finishing time of deposition of the above marine gravels to the early stage of following regression period(MIS 5d) in which the sea level was still high. The sediments of angular and subangular gravel deposit which lie on this peat layer were assumed to have been deposited during the period from the early stage of the first regression period(MIS 5d) of the Last Interglacial to the Last Glacial. The lower part of the angular gravel layer is composed of the deposits of the fluvial and colluvial sediments, whereas most of the upper and middle part of the layer is mainly composed of angular gravels of colluvial sediments formed in the cold environment.