• Journal of Sensor Science and Technology
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• v.9 no.6
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• pp.430-439
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• 2000

$In_2O_3$-based thin film sensor with 500-600 nm thick was fabricated for the detection of CO gas by rf magnetron sputtering. In order to improve both sensitivity to CO gas and selectivity to hydrogen gas containing -CH, ultra-thin transition metal Co catalyst was sputtered over $In_2O_3$ thin film and annealed at $500^{\circ}C$. Sensitivity to CO was maximum at the thickness of Co 2.1 nm and $300^{\circ}C$, and that to $C_3H_8$ was at the thickness of Co 1.4 nm and $350-400^{\circ}C$. From the x-ray photoelectron spectroscopy (XPS) result, ultra-thin Co was existed into CoO covered with $Co_2O_3$ on $In_2O_3$ particles, and thus p-n junction of $In_2O_3(n-type)$-CoO(p-type) was thought to be formed. In this p-n junction type sensors, sensing mechanism with reducing gases can be explained by the variation of depletion layer thickness formed in the interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1105-1114
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• 1996

The characteristic and performance of ${\beta}-PbO_2$ layer electrodeposited on ${\alpha}-PbO_2/IrO_2-TiO_2/Ti$ substrate by adding sodium lauryl sulfate and $TiO_2$ powder in lead nitrate solution were investigated by using XRD, SEM, cyclic voltammograms, and macro-elctrolysis. Results of XRD analysis ascertain that ${\beta}-PbO_2$ layers electrodeposited in the presence of sodium lauryl sulfate and $TiO_2$, powder on ${\alpha}-PbO_2/IrO_2-TiO_2/Ti$ substrate have the same tetragonal structure as pure ${\beta}-PbO_2$ layers. The SEM results show that sodium lauryl sulfate tend to diminish crystal size of the deposited layer. The ${\beta}-PbO_2$ electrode electrodeposited in the presence of sodium lauryl sulfate and $TiO_2$ powder gives significantly improved oxygen overvoltage and durability for anodic oxidation in KOH and $HClO_4$ supporting electrolyte. Electrode performance and durability for the evolution of ozone in perchloric acid solution have been investigated by using ${\beta}-PbO_2$ electrodes electrodeposited on Titanium $madras^{(R)}$. It was ascertained that the $PbO_2$ electrode electrodeposited on ${\alpha}-PbO_2/IrO_2-TiO_2/Ti$ $madras^{(R)}$ by adding sodium lauryl sulfate and $TiO_2$ powder in $HClO_4$ supporting electrolyte had the highest current efficiency and durability.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1448-1452
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• 2004

In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.1-8
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• 2001

Conventional microgyroscopes of vibrating type require resonant frequency tuning of the driving and sensing modes to achieve high sensitivity. These tuning conditions depend on each fabricated microgyroscopes, even though the microgyroscopes are identically designed. A new micromachined resonator, which is applicable to microgyroscopes with self-toning characteristics, is presented. Since the laterally driven two degrees of freedom (2DOF) resonator was designed as a symmetric structure with identical stiffness in two orthogonal axes, the resonator is applicable to vibrating microgyroscopes, which do not need mode tuning. A dynamic model of the resonator was derived considering gyroscopic application. The dynamic model was evaluated by experimental comparison with fabricated resonators. The microgyroscopes were fabricated using a simple 2-mask-process of a single polysilicon layer deposited on an insulator layer. The feasibility of the resonator as a vibrating microgyroscopes with self-tuning capability is discussed. The fabricated resonators of a particular design have process-induced non-uniformities that cause different resonant frequencies. For several resonators, the standard deviations of the driving and sensing frequencies were as high as 1232Hz and 1214Hz, whereas the experimental average detuning frequency was 91.75Hz. The minimum detuned frequency was 68Hz with $0.034mVsec/^{\circ}$ sensitivity. The sensitivity of the microgyroscopes was low due to process-induced non-uniformity; the angular rate bandwidth, however, was wide. This resonator could be successfully applicable to a vibrating microgyroscopes with high sensitivity, if improvements in uniformity of the fabrication process are achieved. Further developments in improved integrated circuits are expected to lower the noise level even more.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.241-241
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• 2007

We fabricated SmBCO coated conductors(CCs) on IBAD-MgO templates using co-evaporation method. IBAD-MgO templates consist of PLD-LMO/epi-MgO/IBAD-MgO/Ni-alloy and showed good in-plane texture of below FWHM 7 degree. Evaporation rates of Sm, Ba, and Cu were precisely controlled to get the optimum composition ratio after deposition process. To optimize the oxygen partial pressure of reaction region, wide range of the partial pressure was investigated from 1 mTorr to 15 mTorr. By reducing the oxygen partial pressure to 5mTorr, (103)grains in SmBCO layer have been increased. On the other hand, there were only (001)grains in SmBCO layer deposited at 15 mTorr $O_2$. Deposition temperature was also investigated from $600^{\circ}C\;to\;800^{\circ}C$ to make high Ic SmBCO CCs. SmBCO on IBAD MgO template showed that the Ic increased gradually at higher growth temperature to $800^{\circ}C$, which the highest Jc and Ic is $2.6\;MA/cm^2$ and 500 A/cm-w., respectively.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.9-15
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• 2021

Miniaturization of semiconductor devices has recently faced a physical limitation. To overcome this, 3D packaging in which semiconductor devices are vertically stacked has been actively developed. 3D packaging requires three unit processes of TSV, wafer grinding, and bonding, and among these, copper bonding is becoming very important for high performance and fine-pitch in 3D packaging. In this study, the effects of Ti nanolayer on the antioxidation of copper surface and low-temperature Cu bonding was investigated. The diffusion rate of Ti into Cu is faster than Cu into Ti in the temperature ranging from room temperature to 200℃, which shows that the titanium nanolayer can be effective for low-temperature copper bonding. The 12nm-thick titanium layer was uniformly deposited on the copper surface, and the surface roughness (R_q) was lowered from 4.1 nm to 3.2 nm. Cu bonding using Ti nanolayer was carried out at 200℃ for 1 hour, and then annealing at the same temperature and time. The average shear strength measured after bonding was 13.2 MPa.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.41-45
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• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.