• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.105-110
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• 2011

The doping procedure in crystalline silicon solar cell fabrication usually contains oxygen injection during drive-in process and removal of phosphorous silicate glass(PSG). In this paper, we studied the effect of oxygen injection and PSG on conversion efficiency of solar cell. The mono crystalline silicon wafers with $156{\times}156mm^2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type were used. After etching $7{\mu}m$ of the surface to form the pyramidal structure, the P(phosphorous) was injected into silicon wafer using diffusion furnace to make the emitter layer. After then, the silicon nitride was deposited by the PECVD with 80 nm thickness and 2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$880^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Solar cells with four different types were fabricated with/without oxygen injection and PSG removal. Solar cell that injected oxygen during the drive-in process and removed PSG after doping process showed the 17.9 % conversion efficiency which is best in this study. This solar cells showed $35.5mA/cm^2$ of the current density, 632 mV of the open circuit voltage and 79.5 % of the fill factor.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.25 no.1
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• pp.37-54
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• 1999

Planarized SiO$_2$ particles were prepared by two-step reduction method of making much smaller particles, micron-sized ones, to improve spreadability, adherence, and smoothness. Various pigments known as flaky extender usually have terrace layers on their surfaces, but SiO$_2$ Particles in this study exhibit a smooth surface structure. These single SiO$_2$ particles were used for core particles to prepare the composite particles coated with ultra fine TiO$_2$ particles by a homogeneous precipitation method. The thickness and the morphology of the deposited TiO$_2$ layer could be altered by adjusting the reactant concentrations, reaction time and temperature. The characteristics of SiO$_2$/TiO$_2$composite in the field of color cosmetics is to give a UV-cut effect and to enhance the chroma of human skin color, one of optical properties.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.398-404
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• 2001

Effects of coating treatment of metallic Cu film on SiC for Al/SiC composite were studied. The Copper was deposited on SiC by electroless plating method. Al/sic composite was fabricated at temperature range of $670^{\circ}C$ to 90$0^{\circ}C$ under vacuum atmosphere. The wetting behavior of Al/SiC composite were analysed by SEM and XRD. The coating treatment on SiC improved wettability of Al melt on SiC considerably comparing to the non coated SiC. This improved wettability seems strongly concerned to the increase of chemical reactivity between coated layer and Al matrix. The improvement of wettability of Al melt on the Cu coated SiC was closely related to in the initial stage of reaction. The metallic film played an important role in reducing the interfacial free energy and breaking down the aluminum oxide film through the reaction with Al melt. The wetting behavior of the as-received SiC with Al melt was not uniform, indicated by the contact angles from less than $97^{\circ}$to more than $97^{\circ}$.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.22-28
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• 1992

Barium ferrite thin films were reactively deposited with Fe and BaO composite targets by a facing tergects sputtering unit. When thermally oxidized silicon wafers were used as substrates, minimum substrate heating of $750^{\circ}C$ was necessary for the perfect c-axis alignment in barium ferrite films. To lower the critical substrate temperature for the good c-axis alignment, such seed layers as ZnO, ${\alpha}-Fe_{2}O_{3}$ and ${\gamma}-Fe_{2}O_{3}$ were tested. The excellent c-axis algnment of BaM was obtained at a substrate temperature of $600^{\circ}C$ on ZnO seed layer whose (002) plane was parallel to the substrate surface. The magnetic properties of the BaM film showed saturation magnetization of 295 emu/cc, perpendicular coercivity of 1.7 kOe and squareness of 0.75. Optimum deposition rate of $230\;{\AA}/min$ was obtained with the composite target and this was 5 to 20 times higher than those of other investigators with oxide targets.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.17-23
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• 2002

The SrS:CuCl TFEL devices were fabricated by electron-beam deposition and the luminescent characteristics of the fabricated SrS:CuCl TFEL devices were studied. The SrS powder was used as the host materials and 0.05 ~ 0.6 at% of CuCl powder was added as the luminescent center. The deposition conditions of substrate temperature, electron beam current, and deposition rate were 500 $^{\circ}C$ , 20 ~ 40 mA, and 5 ~ 10 /sec, respectively The total thickness of the phosphor layer deposited was 6000 . The blue emission at low CuCl concentrations was observed from the luminescent centers of monomer, dimer, trimer, and tetramer, The bright greenish blue emission at high CuCl concentrations was observed from the dimer and trimer luminescent centers. The maxium luminance was observed from the SrS:CuCl TFEL devices doped with 0.2 at% of CuCl concentration and the threshold voltage, luminance(L$_{40}$ ), efficiency(η$_{20}$) and CIE coordinate obtained were 55 V, 728 cd/$m^2$, 0.49 lm/w, and (0.21, 0.33), respectively..

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 1994.11a
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• pp.21-26
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• 1994

Conventional electroexplosive devices (EED) commonly use a very small metal bridgewire to ignite explosive materials i.e. pyrotechnics, primary and secondary explosives. The use of semiconductor devices to replace “hot-wire” resistance heating elements in automotive safety systems pyrotechnic devices has been under development for several years. In a typical 1 amp/1 watt electroexplosive devices, ignition takes place a few milliseconds after a current pulse of at least 25 mJ is applied to the bridgewire. In contrast, as for a SCB devices, ignition takes place in a few tens of microseconds and only require approximately one-tenth the input energy of a conventional electroexplosive devices. Typically, when SCB device is driven by a short (20 $\mu\textrm{s}$), low energy pulse (less than 5 mJ), the SCB produces a hot plasma that ignites explosive materials. The advantages and disadvantages of this technology are strongly dependent upon the particular technology selected. To date, three distinct technologies have evolved, each of which utilizes a hot, silicon plasma as the pyrotechnic initiation element. These technologies are 1.) Heavily doped silicon as the resistive heating initiation mechanism, 2.) Tungsten enhanced silicon which utilizes a chemically vapor deposited layer of tungsten as the initiation element, and 3.) a junction diode, fabricated with standard CMOS processes, which creates the initial thermal environment by avalanche breakdown of the diode. This paper describes the three technologies, discusses the advantages and disadvantages of each as they apply to electroexplosive devises, and recommends a methodology for selection of the best device for a particular system environment. The important parameters in this analysis are: All-Fire energy, All-Fire voltage, response time, ease of integration with other semiconductor devices, cost (overall system cost), and reliability. The potential for significant cost savings by integrating several safety functions into the initiator makes this technology worthy of attention by the safety system designer.

• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.141-145
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• 2000

Anodically Polymerized conducting Polypyrrole film electrode was employed to Pick up uranyl ion with the type of Gr/ppy, xylenol orange modified electrode. To have Porous and oriented ppy film, NBR was applied as precoating agent. The rate constant of polymerization was $3.22\times10^{-3}s^{-1}$ which was 1.6 times smaller value than bare graphite surface. The deposited amount of uranyl iou on $1.70Ccm^{-2}$ of ppy was $1.55\times10^{-4}g$. The matrix effect in artificial seawater was $6.8\%$. The polymer film electrode has a diffusion controlled process in conduction, but the modified Gr/ppy, $X.O^{4-}UO^+$ type was influenced on the ion doping and electronic conduction of film itself owing to increasing of impedance. The capacitance of electrical double layer was respectively enhanced to 56 and 130 times in Gr/ppy, $X.O.^{4-}$ and Gr/ppy, $X.O^{4-}UO^+$ than Grippy type electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.202-202
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• 2008

실리콘 기판 위에 성장된 세륨 산화막(CeO2)은 고품질의 SOI(Silicon on Insulator)나 혹은 안정한 캐패시터 소자와 같은 반도체 소자에 대한 응용 가능성이 높아 여러 연구가 진행되어 왔다. 세륨 산화막은 형석 구조, 다시 말해서 대칭적인 큐빅 구조이며 화학적으로 안정한 물질이다. 또한, 세륨 산화막의 격자상수 (a = $5.411\AA$)는 실리콘의 격자상수 (a = $5.430\AA$) 와 비슷하며 큰 밴드갭(6eV) 및 높은 유전상수 ($\varepsilon$ = 26), 높은 열적 안전성을 지니고 있어 실리콘 기판에 사용된 기존 절연막인 사파이어나 질코늄 산화막보다 우수한 특성을 지니고 있다. 본 논문에서는 스퍼터링을 이용하여 세륨 산화막을 실리콘 기판 위에 형성하면서 기판가열 온도 조건을 각각 상온, $100^{\circ}C$, $200^{\circ}C$로 설정하였으며, 세륨 산화막의 증착 두께 조건을 각각 80nm, 120nm로 설정한 다음 퍼니스를 이용하여 $1100^{\circ}C$에서 1시간 동안 열처리를 거친 세륨 산화막의 결정화 형태 및 박막의 막질 상태를 각각 X선 회절 장치 (XRD) 및 주사전자현미경 (SEM)으로 관찰하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.602-607
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• 2013

Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.