• Journal of the Korean Electrochemical Society
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• v.5 no.2
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• pp.68-73
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• 2002

Modified polymer electrolyte membranes were fabricated by the applying dc magnetron sputter-deposited Pd thin layers on the surface of the $Nafion^{TM}$ membranes in argon atmosphere. The Pd thin films were characterized by investigating its morphology, methanol permeability, and protonic conductivity. The performance of a direct methanol fuel cell(DMFC) with the modifed polymer electrolyte membrane was also tested by the measurement of its currents and voltages under flowing methanol. The Pd thin film could be a barrier layer to methanol crossover, but the protonic conductivity of the modified polymer membrane was reduced. By using the modified polymer eletrolyte membranes, both the methanol permeability and the protonic conductivity were decreased with increasing the thickness of Pd thin film. However, the performances of DMFC were almost independent on the thickness of Pd thim films. The efffcts of methanol concentration in a feeding fuels on the protonic conductivity and the cell performance were also investigated.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.942-947
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• 2001

Thickness dependence of orientation on piezoelectric and electrical properties was investigated by PZT (52/48) films by diol based sol-gel method. The thickness of each layer by spinning at one time was $0.2{\mu}m$ and crack-free films could be successfully deposited on 4 inches Pt/Ti/$SiO_2$/Si substrates by 0.5 mol solutions in the range from $0.2{\mu}m$ to $3.8{\mu}m$. Excellent P-E hysteresis curves were achieved, which were attributed to the well-densified PZT films and columnar grain without pores or any defects between interlayers. The (111) preferred orientation of films were shown in the range of thickness below $1{\mu}m$. As the thickness increased, the (111) preferred orientation disappeared from $1{\mu}m$ to $3{\mu}m$ region, and the orientation of films became random above $3{\mu}m$. Dielectric constants and longitudinal piezoelectric coefficient, $d_{33}$, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of $1{\mu}m$.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.486-493
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• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

• Journal of the korean academy of Pediatric Dentistry
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• v.25 no.1
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• pp.209-224
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• 1998

The purpose of this study was to compare the amount of calcium fluoride deposited on the enamel and dentin surface and to obtain information on the morphological change and crystallographic details of mineral deposition after 12,000ppm APF application in vitro. The bovine enamel and dentin blocks were randomly assigned to eight groups according to artificial caries lesion formation and difference of fluoride application time. The fluoride concentration and morphological characteristics on the treated enamel and dentin surface were investigated by using fluoride quantitative analysis and SEM. The powdered enamel and dentin of the intact bovine incisors were prepared for the X-ray diffraction analysis. The following results were obtained. 1. The amounts of KOH-soluble fluoride on the carious enamel and dentin surface after 24h APF application were higher than after only 5min APF application(p<0.05), but in the case of the sound enamel and dentin surface were similar after 5min and 24h application (P>0.05). The fluoride content was highly increased in the carious dentin as compared with sound dentin after APF application(P<0.05). 2. The carious enamel surface after APF application, the demineralized enamel surface were recovered a more dense enamel surface and precipitation of crystal was observed a distintive surface layer of spherical globules of about 1 m diameter. In the case of the fluorided carious dentin surface, precipitation of calcium fluoride-like material was deposited both inside the dentinal tubules as well as in the intertubular regions. 3. The crystallographic structure of powdered enamel and dentin after 24h APF application had large crystallities of apatite and CaF2 diffraction peaks in the enamel as compared with dentin. The diffraction data collected from the 27.50-29.50(2) angular range of the powdered enamel, the (105) apatite, (225) apatite and (111) CaF2 peaks of the enamel crystallities were detected after 24h APF application.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.158-165
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• 1993

Abstract To investigate the effect of underlying Si on the thermal stability of the TiS$i_2$ film, TiS$i_2$ films obtained by the solid-state reaction of the Ti film on as-deposited or on heat-treated poly-silicon and amorphous-silicon were annealed at 90$0^{\circ}C$ for various times. The poly-Si film was evaluated by XRD, SEM and TEM. The thermal stability of the TiS$i_2$ film was evaluated by measuring the sheet resistance and microstructural evolution during furnace annealing. Agglomeration of the TiSi, film occurred more on amorphous-Si than on poly-Si. The thermal stability of the TiS$i_2$ film was improved by annealing poly-Si. The Si layer crystallized from amorphous-Si has an equiaxed structure with the (111) preferred orientation whereas for as-deposited poly-Si has a columnar structure with the (110) orientation. Better thermal stability of the TiS$i_2$ film can be obtained by the higher surface energy of underlying poly-Si.

• Journal of the Korean Geosynthetics Society
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• v.16 no.2
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• pp.109-119
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• 2017

In this research, it was investigated that whether the upper sand deposited in Nakdong River Estuary Delta region has the role of horizontal drains like sand mat. The results from tests for particle size distribution and permeability of the upper sand deposit did not meet completely the criteria for the horizontal drain material. Thus, numerical analysis has been conducted additionally. Numerical analyses of consolidation of soft soils with upper layer of sand deposit are conducted in both the sand mat with a thickness of 1m and the upper sand deposit with 1, 2, 3, and 4 m of thickness and their results are compared. As the results of numerical analysis, the upper sand deposit with a thickness of 2m or more may play the role of horizontal drains similar to a sand mat. If a PVD is installed, the ability of upper sand deposit as horizontal drains is increased. Form this study, it was concluded that the upper sand deposited in Nakdong River Estuary Delta has the role of horizontal drain.

• The Journal of Engineering Geology
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• v.24 no.1
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• pp.9-21
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• 2014

We examined high-resolution seismic data, side scan sonar data, surface sediments, and vibrocore samples from a sand ridge off the western part of Dukjuk-Do in Gyeonggi Bay, with the aim of interpretation of seismic stratigraphy and sedimentary environment. Based on the seismic data, the deposited sands are divided into three sedimentary units. 14C age data indicate that the top sequence (sequence I) formed at 5000-6000 yr BP, when a transgression resulted in strong shifting tides. Analyses of the vibrocore samples indicate that sequence II is a paleo-mudflat layer of intertidal sediments dominated by mud. Sequence III consists of terrestrial sediments that are presumed to have been deposited at the end of the Pleistocene, unconformably overlying the acoustic bedrock and Mesozoic granite. The side scan sonar data indicate that sand waves were formed on the seabed on top of the sand ridge. Generally, this is the direction of $N20^{\circ}E$, which coincides with the direction of tidal flow. Sand ripples occur away from the top of the sand ridge and are distributed homogeneously across a sandy slope. Vibrocore analyses indicate that the surface sediments and core sediments (samples VC-1, -2, and -3) are homogeneous, without any internal structures, and are characterized by a mixture of medium and fine sand (1-$2{\phi}$), respectively.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.400-406
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• 1997

The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering, respectively, were analyzed with increasing annealing temperature($400{\sim}800^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to $SiO_{2}$ and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. The thermal characteristics of Pt micro heater were analyzed with Pt-RTD integrated on the same substrate. In the analysis of properties of Pt micro heater, active area was smaller size, Pt micro heater had better thermal characteristics. The temperature of Pt micro heater with active area, $200{\mu}m{\times}200{\mu}m$ was up to $400^{\circ}C$ with 1.5watts of the heating power.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.