• Korean Journal of Materials Research
• /
• v.16 no.6
• /
• pp.382-385
• /
• 2006

Ni-doped $CoSb_3$ was prepared by the hot pressing, and its doping effects on the thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by encapsulated induction melting and the subsequent heat treatment at 773 K for 24 hrs, followed by the hot pressing under 60 MPa at 773 K for 2 hrs. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the Ni doping.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2006.08a
• /
• pp.135-135
• /
• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.955-959
• /
• 2004

The effects of conduction band offset on 2 dimensional electron gas (2DEG) in N-InAlAs(AlAsSb)/InGaAs/InAlAs (AlAsSb) metamorphic heterostructures (MMHS) are studied. A combination of the Shubnikov-deHaas oscillations and the Hall measurements is used to investigate the electron transport properties of these structures. The mobility in the second subband is higher than that in the first subband in all heterostructures. This is attributed to the fact that electrons in the first subband we, on average, closer to the interface and are therefore scattered more strongly by ionized impurities. The results suggest that intersubband scattering rate is more dominant in structures with higher conduction band offset whereas alloy scattering is found to be more dominant in the higher band offset system.

• Journal of the Korean Magnetics Society
• /
• v.16 no.1
• /
• pp.6-10
• /
• 2006

The sulphur spinel $FeCr_{2-x}M_xS_4$(M=Ga, In) have been studied with Mossbauer spectroscopy, x-ray diffraction (XRD), and vibrating sample magnetometer. The XRB patterns for samples $FeCr_{2-x}M_xS_4$(M=Ga, In: x=0.1, 0.3) reveal a single phase, which the Ga and In ions are partially occupied to the tetrahedral (A) site. The Neel temperature for the Ga substituted samples increases from 180 to 188 K, with increase from x=0.1 to 0.3. While, it decreases from 173 to 160 K, for the In substituted samples of the x=0.1 and 0.3, respectively. The Mossbauer spectra were collected from 4.2 K to room temperature. We have analyzed the Mossbauer spectra using eight Lorentzian lines fitting method for the $FeCr_{2-x}In_xS_4$(x=0.1) at 4.2 K, yielding the 1311owing results; $H_{hf}=146.0kOe,\;{\Delta}E_Q=1.88mm/s,\;\theta=36^{\circ},\;\phi=0^{\circ},\;\eta=0.6$, and R=1.9. The Ga ions enter into the both sites octahedral (B) and tetrahedral (A), simultaneously the same amounts of Fe ions migrate from the A to the B site, this result is an agreement with XRD results, too. The ${\Delta}E_Q$ of the A and B site in Mossbauer spectra of the samples $FeCr_{2-x}Ga_xS_4$(x=0.3) are 0.83 and 2.94mm/s, respectively. While they are 0.56 and 2.36mm/s for the $FeCr_{2-x}In_xS_4$(x=0.3). It is noticeable that the ${\Delta}E_Q$ for the Ga doped samples are larger than that of the corresponding In doped samples, in spite of the larger ionic radius for In ions. The bond lengths of Cr-S, for the Ga and In doped samples (x=0.3) are found to be 2.41 and $2.43\;{\AA}$, respectively. We interpret that the larger covalence effect from the smaller bond length induces a large asymmetric charge distribution. Finally, it gives a large quadrupole interaction.

• Korean Journal of Materials Research
• /
• v.21 no.12
• /
• pp.644-649
• /
• 2011

[ $A_{3-2x/3}Al_{1-z}In_{z}O_4F:Eu_x^{3+}$ ](A = Ca, Sr, Ba, x = -0.15, z = 0, 0.1) oxyfluoride phosphors were simply prepared by the solid-state method at $1050^{\circ}C$ in air. The phosphors had the bright red photoluminescence (PL) spectra of an $A_{3-2x/3}Al_{1-z}In_{z}O_4F$ for $Eu^{3+}$ activator. X-ray diffraction (XRD) patterns of the obtained red phosphors were exhibited for indexing peak positions and calculating unit-cell parameters. Dynamic excitation and emission spectra of $Eu^{3+}$ activated red oxyfluoride phosphors were clearly monitored. Red and blue shifts gradually occurred in the emission spectra of $Eu^{3+}$ activated $A_3AlO_4F$ oxyfluoride phosphors when $Sr^{2+}$ by $Ca^{2+}$ and $Ba^{2+}$ ions were substituted, respectively. The concentration quenching as a function of $Eu^{3+}$ contents in $A_{3-2x/3}AlO_4F:Eu^{3+}$ (A = Ca, Sr, Ba) was measured. The interesting behaviors of defect-induced $A_{3-2x/3}Al_{1-z}In_{z}O_{4-{\alpha}}F_{1-{\delta}}$ phosphors with $Eu^{3+}$ activator are discussed based on PL spectra and CIE coordinates. Substituting $In^{3+}$ into the $Al^{3+}$ position in the $A_{3-2x/3}AlO_4F:Eu^{3+}$ oxyfluorides resulted in the relative intensity of the red emitted phosphors noticeably increasing by seven times.

• Korean Journal of Optics and Photonics
• /
• v.12 no.1
• /
• pp.40-47
• /
• 2001

The structural dependence of the performance of an 1.55 $1.55{\mu}m$ InGaAsPIInGaAsP MQW electro-absorption modulator for highspeed digital fiber communication was systematically investigated. The effects of n-doped SCH region length $t_n$ as well as the general structure parameters including quantum well number $N_w$, well-thickness $t_w$, detuning wavelength $\Delta\lambda$, and device length L were thoroughly analyzed. Thereby, a high-pelfoIDlance electro-absorption modulator with device length L of $100{\mu}m$ was successfully designed. The designed structure showed excellent characteristics that have residual loss less than -1.5 dB, operational voltage from 0 V to -2V, and extinction ratios of -2.92 dB at $V_{\alpha}$=-1 V and -10 dB at $V_{\alpha}$=-2V.X>=-2V.

• Journal of the Korean Ceramic Society
• /
• v.40 no.12
• /
• pp.1170-1176
• /
• 2003

We developed an evolutionary optimization process involving a genetic algorithm and combinatorial chemistry (combi-chem), which was tailored exclusively for tile development of LED phosphors with a high luminescent efficiency, when excited by soft ultra violet irradiation. The ultimate goal of our study was to develop oxide red phosphors, which are suitable for three-band white Light Emitting Diodes (LED). To accomplish this, a computational evolutionary optimization process was adopted to screen a Eu$^{3+}$-doped alkali earth borosilicate system. The genetic algorithm is a well-known, very efficient heuristic optimization method and combi-chem is also a powerful tool for use in an actual experimental optimization process. Therefore the combination of a genetic algorithm and combi-chem would enhance the searching efficiency when applied to phosphor screening. Vertical simulations and an actual synthesis were carried out and promising red phosphors for three-band white LED applications, such as Eu$_{0.14}$Mg$_{0.18}$Ca$_{0.07}$Ba$_{0.12}$B$_{0.17}$Si$_{0.32}$O$_{\delta}$, were obtained.

• Transactions of the Korean hydrogen and new energy society
• /
• v.21 no.1
• /
• pp.19-25
• /
• 2010

Composites of LSCF($La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$) and CGO (gadolinium doped ceria)-based ceramics are logical candidate cathode materials with CGO electrolytes. LSCF with perovskite structure was synthesized and investigated by Solid State Reaction (SSR) method used as cathode materials for SOFC (solid oxide fuel cell). The optimized temperature was $1100^{\circ}C$ to synthesize $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ with rhombohedral structure. The polarization resistance of the LSCF/CGO (50:50 wt.%) was smaller than that of other composite cathodes. The analysis of the EIS data of LSCF/CGO suggests that the diffusion and adsorption-desorption of oxygen can be the key process in the cathodic reaction.

• Korean Journal of Materials Research
• /
• v.8 no.6
• /
• pp.526-531
• /
• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Journal of the Korean Ceramic Society
• /
• v.39 no.4
• /
• pp.367-376
• /
• 2002

Electrical conduction in $SrZr_{1-x}Y_xO_{3-\delta}$((x=0.05, 0.10)-metal electrode system was investigated by impedance spectroscopy and two-probe d.c. conductivity measurement. Electrode conductivity in anodic direction varies with $P_W^{1/2}$( and that in cathodic direction with $P_{O2}^{1/4}$ in oxidizing atmosphere. In hydrogen atmosphere, the addition of water vapor increased the electrode conductivity both in anodic and cathodic direction. Increasing dopant concentration from 5 to 10% showed a more than four times increase in anodic conduction as well as bulk conduction of the solid electrolyte. This observation implies that unfilled oxygen vacancy concentration increases rapidly as the dopant content increases in humid atmosphere. The activation energy of cathodic conduction in Pt and Ag electrode was nearly same below $800^{\circ}C$ which means the rate of cathodic reaction is determined by the reaction in the electrolyte surface rather than on the metal electrodes.