• ETRI Journal
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• v.45 no.6
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• pp.1056-1064
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• 2023

The optical properties of the materials composing organic light-emitting diodes (OLEDs) are considered when designing the optical structure of OLEDs. Optical design is related to the optical properties, such as the efficiency, emission spectra, and color coordinates of OLED devices because of the microcavity effect in top-emitting OLEDs. In this study, the properties of top-emitting blue OLEDs were optimized by adjusting the thicknesses of the thin metal layer and capping layer (CPL). Deep blue emission was achieved in an OLED structure with a second cavity length, even when the transmittance of the thin metal layer was high. The thin metal film thickness ranges applicable to OLEDs with a second microcavity structure are wide. Instead, the thickness of the thin metal layer determines the optimized thickness of the CPL for high efficiency. A thinner metal layer means that higher efficiency can be obtained in OLED devices with a second microcavity structure. In addition, OLEDs with a thinner metal layer showed less color change as a function of the viewing angle.

• Journal of Ceramic Processing Research
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• v.20 no.1
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• pp.80-83
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• 2019

The Mn4+-activated Li2ZnSn2O6 (LZSO:Mn4+) red phosphors were synthesized by the solid-state reaction at temperatures of 1100-1400 ℃ in air. The synthesized LZSO:Mn4+ phosphors were confirmed to have a single hexagonal LZSO phase without the presence of any secondary phase formed by the Mn4+ addition. With near UV and blue excitation, the LZSO:Mn4+ phosphors exhibited a double band deep-red emission peaked at ~658 nm and ~673 nm due to the 2E → 4A2 transition of Mn4+ ion. PL emission intensity showed a strong dependence on the Mn4+ doping concentration and the 0.3 mol% Mn4+-doped LZSO phosphor produced the strongest PL emission intensity. Photoluminescence emission intensity was also found to be dependent on the calcination temperature and the optimal calcination temperature for the LZSO:Mn4+ phosphors was determined to be 1200 ℃. Dynamic light scattering (DLS) and field-effect scanning electron microscopy (FE-SEM) analysis revealed that the 0.3 mol% Mn4+-doped LZSO phosphor particles have an irregularly round shape and an average particle size of ~1.46 ㎛.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.22-25
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• 2020

Deep red EuSi₂O₂N₂ phosphors were synthesized under various sintering gas pressures (1 atm, 2 atm, and 3 atm). They were in good agreement with the standard EuSi₂O₂N₂ ICSD card # 41-6046 (a monoclinic crystal system with space group of P2₁/a). Their photoluminescence intensities were significantly increased with increasing the gas pressures. They showed a broad band emission peaking at 680 nm due to 4f⁶5d¹ - 4f⁷ of Eu²⁺ ion, which can be efficiently excited in the visible range up to 550 nm. The best one at 3 atm was applied for red LED based on blue chip, which showed the strong deep red emission.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.545-548
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• 2008

We report the synthesis of blue emitting materials with a new core structure containing indenopyrazine. Non-doped device using one of these materials as a blue emitter was found to exhibit high external quantumn efficiency of 4.6% and excellent color purity of (0.154, 0.078) as well as narrow emission band of 47nm FWHM.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.526-529
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• 2008

By combining tetraphenylethylene and anthracene, we synthesized 9,10-bis(4-(1,2,2-triphenylvinyl)phenyl) anthracene [BTPPA] and 1,2-di(4'-tert-butylphenyl)-1,2-bis(4'-(anthracene-9-yl)phenyl)ethene [BPBAPE]; both BTPPA and BPBAPE have similar band-gaps, however their PL spectra were shifted by about 30 nm with respect to each other. The fabricated multilayered non-doped OLED devices based on pure BTPPA or BPBAPE exhibited luminance efficiencies of 3.93 cd/A at 6.8 V and 10.33 cd/A at 8.1 V, respectively, at $10\;mA/cm^2$. As the BPBAPE content of the emitting layer increased, the luminance efficiency of the device increased; in addition, the CIE coordinates of the fabricated devices shifted gradually from deep-blue for pure BTPPA to sky-blue for pure BPBAPE.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.91-95
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• 2017

We were designed the hole transport layer of the new composite skeleton structure having a high charge mobility and thermal stability. In this paper, a hole transport layer material based on thiophene molecular structure capable of hole mobility characteristics and high triplet energy was designed and synthesized. The structures and properties of the synthesized compounds were characterized by NMR, fluorescence spectroscopy and energy band gap. As a result of NMR measurement, it was confirmed that when analyzing the integrated type with the position where the measured peak is displayed, it agrees with the structure of hole transport materials. The emission characteristics of the hole transport layer material showed absorption characteristics at 412 nm and 426 nm, respectively, and exhibited emission characteristics in the range of 469 nm and 516 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1593-1598
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• 2011

Blue fluorescent materials based on 9,9'-diethyl-2-diphenylaminofluorene derivatives were synthesized and characterized. These materials were used as the blue dopant materials for the emitting layer of organic light-emitting diode devices with the following device structure: ITO/DNTPD (40 nm)/NPB (20 nm)/MADN: dopants (2%, 20 nm)/$Alq_3$ (40 nm)/Liq (1.0 nm)/Al. All devices exhibited highly efficient blue emission. One of these devices exhibited a maximum luminance, luminous efficiency, power efficiency and CIE x, y coordinates of 8400 $cd/m^2$, 8.10 cd/A at 20 $mA/cm^2$, 3.36 lm/W at 20 $mA/cm^2$ and (0.151, 0.159), respectively. A deep blue device with CIE coordinates of (0.152, 0.139) showed the maximum luminance, luminous efficiency and power efficiency of 8630 $cd/m^2$, 6.31 cd/A at 20$mA/cm^2$ and 2.62 lm/W at 20 $mA/cm^2$, respectively.

• Rapid Communication in Photoscience
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• v.1 no.1
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• pp.19-20
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• 2012

Novel star-shaped imide compounds containing electron-donating triphenylamine and/or electron-withdrawing bis(trifluoromethyl)phenyl side groups were synthesized via a two-step process. First, 3,6-dibromo-benzene-1,2,4,5-tetracarboxylic acid (2B4BA) was reacted with 4-aminophenyl (diphenylamine) (ATPA) or 3,5-bis(trifluoromethyl)aniline (6FA) by imide reaction. Then, Suzuki coupling reaction was carried out on these compounds with 4-(N,N-diphenylamino)-1-phenyl boronic acid (BTPA) or 3,5-bis(trifluoromethyl)phenyl boronic acid (6FBB), resulting in 3,6-bis[4-(diphenylamino)phenyl]-N,N'-bis[4-(diphenylamino) phenyl]-pyromellitimide (TPTPPI), 3,6-bis[3,5-bis(trifluoro methyl) phenyl]-N,N'-bis[3,5-bis(trifluoromethyl) phenyl]-pyro mellitimide (6F6FPI) or 3,6-bis[4-(diphenylamino)phenyl]-N,N'-bis[3,5-bistrifluoromethyl)phenyl]-pyromellitimide (6FTPPI). The imide compounds obtained were characterized by NMR, FT-IR, DSC, TGA, melting point analyzer, EA, and solubility measurements. In addition, their optical and electrical properties were evaluated by fluorescence spectroscopy, UV-vis spectroscopy, and cyclic voltammetry (CV). 6F6FPI exhibited deep blue emission (443 nm), along with high $T_m$ ($382^{\circ}C$) and relatively high $T_g$ ($148^{\circ}C$).

• Applied Chemistry for Engineering
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• v.34 no.1
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• pp.94-97
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• 2023

2,7-bis(3',6'-diphenyl-[1,1':2',1"-terphenyl]-4'-yl)-9,9'-spirobi[fluorene] (BTPSF) and 2,7-bis(1,4-diphenyltriphenylen-2-yl)-9,9'-spirobi[fluorene] (BDTSF) were successfully synthesized as novel blue-emission materials for organic light-emitting diodes (OLEDs) based on the spirobifluorene (SBF) moiety. BTPSF and BDTSF were obtained in high purity via a Diels-Alder reaction, without the use of a catalyst. Photoluminescence spectra of the synthesized materials showed maximum emitting wave-lengths of approximately 381 and 407 nm in solution and 395 and 434 nm in the film state, for BTPSF and BDTSF, respectively, indicating ultra-violet and deep blue emission colors. BDTSF was applied as an emissive layer (EML) in non-doped devices and achieved a current efficiency of 0.61 cd/A and an external quantum efficiency (EQE) of 0.46%.