• Journal of Korean Society of Water and Wastewater
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• v.25 no.2
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• pp.223-230
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• 2011

An electrolytic oxidation process was applied to remove odorous compounds from non-point odor sources including wastewater pipelines and manholes. In this study, a distance between the anode and the cathode of the electrolytic process was varied as a system operating parameters, and its effects on odor removal efficiencies and reaction characteristics were investigated. Odor precursors such as sediment organic matters and reduced sulfur/nitrogen compounds were effectively oxidized in the electrolytic process, and a change in oxidation-reduction potential (ORP) indicated that an stringent anaerobic condition shifted to a mild anoxic condition rapidly. At an electrode distance of 1 cm and an applied voltage of 30 V, a system current was maintained at 1 A, and the current density was 23.1 $mA/cm^{2}$. Under the condition, the removal efficiency of hydrogen sulfide in gas phase was found to be 100%, and 93% of ammonium ion was removed from the liquid phase during the 120 minute operating period. Moreover, the sulfate ion (${SO_4}^{2-}$) concentration increased about three times from its initial value due to the active oxidation. As the specific power consumption (i.e., the energy input normalized by the effective volume) increased, the oxidation progressed rapidly, however, the oxidation rate was varied depending on target compounds. Consequently, a threshold power consumption for each odorous compound needs to be experimentally determined for an effective application of the electrolytic oxidation.

• Biomedical Science Letters
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• v.13 no.1
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• pp.25-32
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• 2007

The purpose of this study was to investigate the effect of the high voltage pulsed Current (HVPC) stimulation on the healing rate and the proliferative activity of keratinocytes and IGF-I mRNA expression of an incisional wound in rat skin. Twenty male Sprague-Dawley rats ($265{\sim}290g$) were randomly divided into HVPC (n=10) and control group (n=10). Rats received 10 mm length of full-thickness incision wound on the back under the anesthesia. The HVPC group received electrical stimulation with a Current intensity of 50 V at 100 pps for a duration of 30 minutes, while the control group was given the same treatment without electricity for a week. Polarity was negative in first three days and positive thereafter. The wound length was measured and evaluated as percentage. The mean number of nucleolar organizer regions (NORs) per nucleus and level of IGF-I mRNA expression were calculated. The mean percent of wound closure were $51.17{\pm}17.76%$ and $80.71{\pm}11.91%$, respectively, in the sham treated control and HVPC stimulated groups (t=-4.308, P<0.001). The mean NOR number per nucleus of the keratinocytes in the control and HVPC group were $1.85{\pm}0.20$ and $2.70{\pm}0.23$, respectively (t=8.638, P<0.001). The IGF-I mRNA level were $0.76{\pm}0.44$ and $1.32{\pm}0.41$, respectively, in the control and HVPC stimulated wounds (t=2.906, P<0.01). There was a positive correlation between the mean NOR number per nucleus and IGF-l mRNA level with a Pearson product moment correlation coefficient of 0.72 (P<0.05). These findings suggest that the HVPC may activate the rRNA of the basal keratinocytes and upregulate the IGF-I mRNA levels by alteration of the electrical environment, and it may increase proliferative activity of the keratinocytes in the skin wound of the rat.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.312-317
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• 2000

Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

• Journal of Ginseng Research
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• v.29 no.1
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• pp.37-43
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• 2005

We performed in vitro and in vivo studies to know whether the inhibitory effects of ginsenosides on $5-HT_{3A}$ receptor channel acctivity are coupled to anti-nausea and anti-vomiting action. In vitro study, we investigated the effect of compound K (CK) and M4, which are ginsenoside metabolites, on human $5-HT_{3A}$ receptor channel activity expressed in Xenopus oocytes using two-electrode voltage clamp technique. Treatment of CK or M4 themselves had no effect in both oocytes injected with $H_2O\;and\;5-HT_{3A}$ receptor cRNA. In oocytes injected with $5- HT_{3A}$ receptor cRNA, M4 treatment inhibited more potently 5-HT-induced inward peak current $(I_{5-HT})$ than CK with dose-dependent and reversible manner. The half-inhibitory concentrations $(IC_{50})$ of CK and M4 were $36.9\;\pm\;10.1\;and\;7.3\;\pm\;2.2\;{\mu}M$, respectively. The inhibition of $I_{5-HT}$ by M4 was non-competitive and voltage-independent. These results indicate that M4 might regulate $5-HT_{3A}$ receptors. In vivo experiments, injection of cisplatin (7.5 mg/kg, i.v.) induced both nausea and vomiting with 1 h latency. These episodes reached to peak after 2 h and persisted for 4 h. Pre-treatment of GTS (500 mg/kg, p.o.) significantly reduced cisplatin-induced nausea and vomiting by $51\;\pm\;8.4\;and\;48.8\;\pm\;6.4\%$ during 4 h compared to GIS­untreated group, respectively. These results show the possibility that in vitro inhibition of $5-HT_{3A}$ receptor channel activity by ginsenosides might be coupled to in vivo anti-emetic activity.

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.28-29
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• 2005

본 논문에서는 MEH-PPV와 DFPP의 폴리머 물질을 이용하여 photovoltaic device가 제작되었고, 그림 1에 두 물질의 분자 구조가 보여진다. Photovoltaic cell의 전기-광학적 특성은 활성층의 폴리머 물질에 의해 결정된다. 이러한 특성을 알아보기 위해서 홉수 스펙트럼이 측정되었다. DFPP는 chloroform, chlorobenzen, THF, acetone에 잘 녹았으며, 본 논문에서는 chloroform이 용매로 사용되었다. 제작 공정은 다음과 같다. 인듐 주석 산화물 (ITO)이 증착된 유리기판은 photolithography 공정을 거친 후, 왕수(HNO$_{3}$ + HCL)로 식각됨으로서 전극의 패턴이 제작되었다. 그리고 ITO 전극 패턴 된 유리기판 위에 PEDOT (CH8000, Baytron)이 코팅된 후 Ar이 주입되는 Convection Oven을 이용하여 120$^{\circ}$C에서 2시간 동안 열처리되어 수분이 제거되었다. 활성층에는 MEH-PPV와 DFPP가 9:1과 2.33:1로 혼합된 폴리머가 사용되었고, 이것은 0.3 %w.t.가 되도록 chloroform에 넣어 5시간 동안 스핀바를 돌려서 용해되었다. 이 용액은 ITO 전극 패턴이 형성된 글라스 위에 3000 rpm으로 45 초간 스핀코팅 되었다. 이 때 얻어진 유기물 박막층은 80$^{\circ}$C의 Ar이 주입되는 convection oven에서 3시간 동안 경화되었다. 경화된 단층 유기물 박막층 위에 Li-Al이 1000 ${\AA}$의 두께로 증착되어 전극이 형성되었고, 이후 질소가 채워진 globe box에서 소자는 encapsulation되어 산소와 수분에 대한 영향으로부터 차단되었다. 상기의 공정으로 제작된 소자의 박막구조는 그림 2에서 보여진다. 그림 3은 MEH-PPV와 DFPP를 혼합했을 때의 흡수 스펙트럼이다. 최대 흡수 파장은 511 nm였다. 그리고 photovoltaic cell의 V-I 특성 결과가 그림 4와 같이 측정되었다. 측정에서는 300${\sim}$700 nm의 파장대를 갖는 태양광 모사계가 사용되었고, 셀의 면적은 10 mm$^{2}$였다. 그림 5의 I-V 특성으로부터 MEH-PPV와 DFPP가 9:1 로 혼합했을 때보다 2.33:1 로 혼합했을 때, photovoltaic device의 효율이 향상됨을 확인할 수 있다. 빛이 75 mW/cm$^{2}$ 의 세기로 조사될 때 9:1과 2.33:1로 혼합된 소자의 open circuit voltage (V$_{oc}$)는 비슷하지만, short circuit current Density (J$_{sc}$)는 각각 -1.39 ${\mu}$A/cm$^{2}$ 와 -3.72${\mu}$A/cm$^{2}$ 로 약 2.7배 정도 증가되었음을 볼 수 있다. 이러한 결과를 통해 electron acceptor인 DFPP의 비율이 높아질수록 photovoltaic cell의 conversion efficiency가 더 크게 됨을 확인할 수 있다. 그러므로 효율이 최대가 되는 두 폴리머의 혼합 비율이 최적화되는 조건을 찾는 것은 매우 중요한 연구가 될 것이다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• Korean Chemical Engineering Research
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• v.52 no.1
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• pp.58-62
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• 2014

Electrochemical ammonia synthesis from water and nitrogen using a Pt/GDC/Pt cell was experimentally investigated. Electrochemical analysis and ammonia synthesis in the moisture-saturated nitrogen environment were performed under the operating temperature range $400{\sim}600^{\circ}C$ and the applied potential range OCV (Open Circuit Voltage)-1.2V. Even though the ammonia synthesis rate was augmented with the increase in the operating temperature (i.e. increase in the applied current) under the constant potential, the faradaic efficiency was decreased because of the limitation of dissociative chemisorption of nitrogen on the Pt electrode. The maximum synthesis rate of ammonia was $3.67{\times}10^{-11}mols^{-1}cm^{-2}$ with 0.1% faradaic efficiency at $600^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.88-93
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• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.