• Title/Summary/Keyword: crystals

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A study on the crystalline phases of AlN single crystals grown by PVT method (PVT 법으로 성장된 AlN 단결정의 결정상에 관한 연구)

  • Kang, Seung-Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.2
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    • pp.54-58
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    • 2014
  • AlN (Aluminum Nitride) crystals were grown by a PVT (Physical Vapor Transport) method and were characterized to phases on the growth temperature. The crystals phase and morphology were analyzed using an optical stereo-microscope and the optimum temperature for the growing was determined. In this report, the characteristics of the AlN crystals grown at various temperatures were reported.

Exsolution of $Bi_4Ge_3O_12$ in $Bi_12GeO_20$ Crystals Grown by Pulling Method (인상 육성한 $Bi_12GeO_20$ 결정내의 $Bi_4Ge_3O_12$석출상)

  • 이태근;정수진
    • Journal of the Korean Ceramic Society
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    • v.28 no.12
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    • pp.981-988
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    • 1991
  • Various crystal defects such as voids, inclusions dislocations, stacking faults and precipitates were observed in the Czochralski-grown Bi12GeO20 crystals. Particularly, precipitates were found in the whole crystals. The phase of these precipitates was identified as Bi4Ge3O12 by EPMA and transmission electron microscopy. The precipitates were produced by pulling rapidly from a non-stoichiometric charge. During the pulling of Bi12GeO20 crystals, the melt composition of stoichiometric charge was changed Bi-deficent with gradual volatilization of Bi2O3. Precipition of the second phase may have been affected by an abrube thermal stress. By adding excess Bi2O3 into the stoichiometric batch, the precipitation of Bi4Ge3O12 was suppressed. At a pulling speed of 2 mm/hr, clear and precipitate from crystals of Bi12GeO20 were grown from the melt of the Bi2O3 excess charge.

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New oxide crystals as substrates for GaN-based blue light emitting devices

  • T. Fukuda;K. Shimamura;H. Tabata;H.Takeda;N. Futagawa;A. Yoshikawa;Vladimir V. Kochurikhin
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.5
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    • pp.470-474
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    • 1999
  • We have successfully grown <111>-oriented $(La,Sr)(Al,Ta)O_{3}\;(LSAT)$ mixed-perovskite single crystals and <0001>-oriented ${Ca_{8}La_{2}(PO_{4})}_{6}O_2$ (CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they are promising as new substrates for the growth of high quality GaN epitaxial layers.

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Growth parameters and formation of slip plane in ZnWO4 single crystals by the Czochralski method

  • Lim, Chang-Sung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.5
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    • pp.202-206
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    • 2010
  • Single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The growth parameters and the formation of slip plane in $ZnWO_4$ crystals were studied. $ZnWO_4$ crystals had a cleavage plane of (010). The dislocation density on the (010) plane at the center of the crystal was lower than that of the edge region. It was inferred that the high density at the edge of the crystals was caused by the thermal gradient during crystal growth. The etch pit arrangement revealed the (100) slip plane to be most active during crystal growth.

Evolution Properties of a Partially Coherent Flat-topped Vortex Hollow Beam Propagating in Uniaxial Crystals Orthogonal to the Optical Axis

  • Liu, Dajun;Wang, Guiqiu;Luo, Xixian;Yin, Hongming;Wang, Yaochuan
    • Journal of the Optical Society of Korea
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    • v.20 no.6
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    • pp.686-693
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    • 2016
  • The analytical expressions for a partially coherent flat-topped vortex hollow beam propagating in uniaxial crystals orthogonal to the optical axis are derived, and the intensity and coherent vortex properties of partially coherent flat-topped vortex hollow beam propagation in uniaxial crystals orthogonal to the optical axis are analyzed by numerical examples. The influence of beam order parameter N, topological charge M, the coherence length and the ratio of refractive indices $n_e/n_o$ of uniaxial crystals on the normalized intensity distribution and coherent vortex of a partially coherent flat-topped vortex hollow beam propagating in uniaxial crystals are discussed in detail.

Bicyclic Derivatives of Aziridine - Materials for New Indicators of Radiation

  • Chebanov, V.A.;Zbruyev, A.I.;Desenko, S.M.;Doroshenko, A.O.;Vaschenko, V.V.
    • Journal of Radiation Protection and Research
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    • v.30 no.1
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    • pp.31-34
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    • 2005
  • The article is devoted to the study of some hi-and tricyclic derivatives of aziridine as materials lot newindicators of ionizing radiation. To create high sensitive materials some aspects of photo induced ring opening processes in aziridine derivatives in ethanol solutions and in polymeric matrix were studied and two steps character of the processes investigated was established. Two types of radioindicators were suggested and preliminary tested. The new way of synthesis of radiochromic derivatives of aziridine was developed and series of target compounds synthesized.

Modification of the electrical parameters of CNT-doped deformed-helix ferro-electric liquid crystals

  • Sood, Nitin;Khosla, Samriti;Singh, Darshan;Bawa, S.S.
    • Journal of Information Display
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    • v.13 no.4
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    • pp.145-149
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    • 2012
  • Liquid crystals are useful for a wide range of applications due to their exceptional properties. Doping of liquid crystals with carbon nanotubes (CNTs), even at very low concentrations, produces a detectable effect on the liquid crystal (LC) properties that can be very attractive for various functions. In this study, an attempt was made to investigate the effect of CNTs on the electrical properties of a short-pitch and high-spontaneous-polarization ferro-electric LC mixture, FLC-6304, at different temperatures. The inclusion of the CNTs significantly reduced the polarization at temperatures well within the $SmC^*$ phase, but the effect was gradually reversed as the transition temperature was approached. The insertion of the CNTs also reduced the response time and the rotational viscosity of the FLC mixture, which is highly desirable in the LCD industry.

Effect of open-core screw dislocation on axial conductivity in semiconductor crystals

  • Taira, Hisao;Sato, Motohiro
    • Advances in nano research
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    • v.1 no.3
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    • pp.171-182
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    • 2013
  • The alternating current (AC) conductivity in semiconductor crystals with an open-core screw dislocation is studied in the current work. The screw dislocation in crystalline media results in an effective potential field which affects the electronic transport properties of the system. Therefore, from a technological view point, it is interesting to investigate properties of AC conductivity at frequencies of a few terahertz. To quantify the screw-induced potential effect, we calculated the AC conductivity of dislocated crystals using the Kubo formula. The conductivity showed peaks within the terahertz frequency region, where the amplitude of the AC conductivity was large enough to be measured in experiments. The measurable conductivity peaks did not arise in dislocation-free crystals threaded by a magnetic flux tube. These results imply different conductivity mechanisms in crystals with a screw dislocation than those threaded by a magnetic flux tube, despite the apparent similarity in their electronic eigenstates.

A Computer Programming for the Analysis of Crystal Structures (결정 구조들의 해석을 위한 컴퓨터 프로그래밍)

  • Kim, Jin-Hui
    • The Transactions of the Korea Information Processing Society
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    • v.7 no.3
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    • pp.872-878
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    • 2000
  • In this paper a computer programming for the expression of nearest neighbor atoms in face-centered cubic (FCC) and body-centered cubic (BCC) crystals was suggested as one of the approaches to understand each of the crystal structure. By using this computer programming the distance values between a reference atom and the nearest neighbor atoms, and the numbers of the nearest neighbor atoms were calculated ane compared for the FCC and BCC crystals. In this algorithm, the positions of the atoms in a crystal were defined as two categories: the corner atoms and face- or body-centered atoms, and considered respectively. For the same order of nearest neighbor atoms except the second order ones the distance values form the reference atom were smaller in the FCC crystals than those in the BCC. Also, the numbers of he first and third nearest neighbor atoms n the FCC crystals were larger than those in the BCC. This difference was explained by the comparison of each atomic packing ratio of the FCC and BCC crystals. The algorithm used in this programming can also be expanded to the analysis of other crystal structures.

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Observation of Nano-scale Domain Boundary in $LiTaO_3$ Single Crystals ($LiTaO_3$ 단결정의 도메인 바운더리 관찰)

  • Jeong, Dae-Yong;Kim, Jin-Sang;Park, Young-Wook;Yoon, Seok-Jin;Cho, Yasuo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.327-327
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    • 2007
  • $LiTaO_3$ single crystal has been studied for surface acoustic wave(SAW) applications. There are two kinds of $LiTaO_3$ single crystals, stoichiometric $LiTaO_3$ (SLT) and congruent $LiTaO_3$ (CLT). These two crystals show quite different dielectrical properties, which might be related with defects in crystals. In this study, we observed the domain boundary of SLT and CLT with scanning nonlinear dielectric microscopy and discussed the stress distribution in $LiTaO_3$ single crystals.

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