• Polymer(Korea)
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• v.29 no.6
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• pp.605-612
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• 2005

This study investigates the isothermal crystallization behaviors of polypropylene-polyethylene-(1-butene) terpolymer and the adiabatically expanded polyolefin structured foams. For this purpose, butane gas was used as a physical blowing agent. Avrami equation has been used to interpret theoretically the experimental results obtained by either DSC or polarized optical microscope. It is believed that elongation induced crystallization occurring during the adiabatic expansion process has resulted in an increase in crystallization rate, eventually leading to a faster growth rate of spherulites and an increase in the nucleation density. An analysis of the foam by SEM images showed that the structure of foam is uniform (below diameter 30 $\mu$m closed cell) In addition, the thermal conductivity and the compressive strength of the polyolefin structured foams was measured. The thermal conductivity of foamed resin with excellent insulation characteristics is reduced compared with unfoamed resin. The compressive strength is decreased with increase in the expansion ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.100-104
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• 2003

$BaTiO_3$ ceramic thin films were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.135-139
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• 2005

Thin films of $BaTiO_3$ system were prepared by radio frequency(rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C}$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

• Polymer(Korea)
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• v.37 no.1
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• pp.100-112
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• 2013

It is found that the commercialization of nylon 66/Cloisite 93A nanocomposite by applying melt intercalation is possible in the composite production facilities of the pilot scale which has been generalized today. The strength and modulus under tensile and flexural stress have been improved with the introduction of Cloisite 93A in nylon 66. Furthermore, it is found through the analysis of morphologic and crystallization behavior that the elements such as content of Cloisite 93A, viscosity of nylon 66 and the crystallization behavior have significantly influences on the characteristics of nanocomposite.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.3-10
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• 1985

In the study the characteristics change of crystallized $Li_2O$.$Al_2O_3$.$SiO_2$ glass-ceramics when varying RO ratio and increasing Al2O3 were investigated to produce a glass-ceramics with high mechanical strength and low thermal expansion. Parent glass was obtained by melting at 1,350~1,40$0^{\circ}C$ for 3 hours and annealing at 45$0^{\circ}C$ and the various physical characteristics were measured. Results were as follows; 1. When ZnO was replaced by MgO thermal expansion coefficient was lowered when increasing ZnO content. 2. Major crystal phase was $\beta$-spodumene the crystal growth mophology was the three dimensional sphere and the activation energy for crystallization was 54.6 Kcal/mol. 3. Parent glass heat-treated at 95$0^{\circ}C$ for 10 hours had ; a) thermal expansion coeff. of $23.2{\times}10^{-7}$/$^{\circ}C$ b)whiteness of 76 c) microhardness of 1,089kg/$mm^2$

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.28-31
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• 2000

BaTiO$_3$cerameic thin films doped with Mn were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PRCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperature. Second heat treatment of the specimen were performed in the temperature range of 400 to 1350$\^{C}$ X-ray diffraction patterns of BaTiO$_3$ thin films show that the specimen heat treated below 600$\^{C}$ is an amorphous phase and the one heat treated above 1100$\^{C}$ forms a poly-crystallization . In this specimen heat-treated at 1300$\^{C}$, a lattice constant ratio(c/a) was 1.188. Scanning electron microscope(SEM) image of BaTiO$_3$ thin films of the specimen heat treated in between 900 and 1100$\^{C}$ shows a grain growth. At 1100$\^{C}$, the specimen stops grain-growing and becomes a poly-crystallization . A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn. A resistivity ratio between the value at room temperature and the one above Curie temperature was 10$^4$ for pure BaTiO$_3$ thin films and 10$\^$5/ fo BaTiO$_3$ : additive 0.127mol% MnO

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.31-37
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• 2000

In the case of metal-induced lateral crystallization (MILC) for low temperature poly-Si TFT, offset length between Ni-thin film and the sides of gate could be modified to control the location of MILC boundary. Electrical characteristics were compared to analyze the effect of MILC boundary that was located either in or out of the channel region of the TFT. By removing the MILC boundary from channel region, on current, subthreshold slope and leakage current properties could be improved. When MILC boundary was located in the channel region, leakage current was reduced with electrical stress biasing. The amount of reduction increased as the channel width increased, but it was independent of the channel length.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• Journal of Korean Society on Water Environment
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• v.23 no.1
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• pp.138-143
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• 2007

This study goes in for the observation of the characteristics of nitrogen removal from swine wastewater by struvite crystallization. In addition, the struvite formation potential in supernatants after struvite crystallization was investigated. In the study for nitrogen removal by struvite crystallization, the effects of pH and molar ratio of magnesium (Mg) injected using bittern as Mg source were investigated. Also, the potential of struvite formation in the supernatant with amount of Mg added was carefully observed. As the results, the optimum pH in the removal of nitrogen was 8.8 and sludge volume was increased as pH was raised from 7 to 12 under the condition that the molar ratio of $Mg^{2+}$ to ${NH_4}^+$-N to ${PO_4}^{3-}$-P was 1:1:1. An optimum removal efficiency of ammonia-N was observed at 1 molar ratio of Mg to ${NH_4}^+$-N, showing no further increase at over 1 molar ratio and dramatical deterioration at under 1 molar ratio. However, the sludge volume was increased by increasing the molar ratio of Mg. In the experiments for the potential of struvite formation in the supernatants, initial -log([$Mg^{2+}$][${NH_4}^+$][${PO_4}^{3-}$]) value was much lower than $pK_{sp}$ and gradually reached $pK_{sp}$ at 2 days, as the molar ratio of Mg increased over 1.2. At 31 days, -log([$Mg^{2+}$][${NH_4}^+$][${PO_4}^{3-}$]) value was returned to the initial value. In addition, the supernatants had a potential precipitation of hydroxylapatite due to calcium contained in bittern, $K_2Mg(SO_4)_3$ and $K_3Na(SO_4)_2$ resulting from the decrease of sodium and potassium in supernatants formed after struvite crystallization as times go by. Based on the results, it appears that some retention time and proper dosage of Mg may be needed for the prevention of scale in pipe line.

• Polymer(Korea)
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• v.36 no.3
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• pp.393-400
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• 2012

The characteristics of indium tin oxide (ITO) thin film deposited on polyethersulfone (PES) film by low temperature E beam has been studied for the flexible photovoltaic devices. It was found that the substrate temperature in the deposition process affected the crystallization behavior of ITO during the post low temperature annealing process. Higher substrate temperature resulted in the increase of crystallinity of annealed ITO. Consequently, the lowering of sheet resistivity and better transmittance were obtained. Crystallization of ITO during the annealing process was facilitated by using oxygen gas in the deposition process and resulted in the enhancement on sheet resistivity and transmittance of ITO. The surface roughness of PES film prohibited the crystallization of ITO during the annealing process and it caused the increase of sheet resistivity and the decrease of transmittance of ITO.