• Korean Journal of Materials Research
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• v.20 no.12
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• pp.661-668
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• 2010

Cu(In,Ga)$Se_2$(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM $CuCl_2$, 8 mM $InCl_3$, 20 mM $GaCl_3$ and 8mM $H_2SeO_3$ at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of $Cu_{1.05}In_{0.8}Ga_{0.13}Se_2$ was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-$500^{\circ}C$ under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at $200^{\circ}C$, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of $500^{\circ}C$ for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the $MoSe_2$ phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

• Journal of the Mineralogical Society of Korea
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• v.29 no.3
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• pp.103-111
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• 2016

Li-bearing hectorite, one member of trioctahedral smectite, occurred large in quantity and confirmed in Turkey western sedimentary boron deposit. Li-bearing hectorite attracted a particular attention because it is one of potential lithium resources. There have been no consensus for the change of hectorite due to heat and acid treatment although it is very important to use in industrial application. In this study, we examined changes of hectorite after heat and acid treatment as well as acid treatement followed by heating. We used clay ores collected in Bigadic deposit, which contained the highest $Li_2O$ content in Turkey boron deposits. Hectorite showed a strong endothermic reaction at $84^{\circ}C$ due to dehydration of absorbed water and interlayer water and a weak endothermic reaction above $600^{\circ}C$ owing to dehydration of crystallization water. The first endothermic reaction accompanied a large weight loss about 6%. Hectorite decomposed into enstatite, cristobalite and amorphous Fe material at $762^{\circ}C$ with exothermic reaction. When hectorite reacted with 3 kinds of 0.1 M acid during 1 hours, it had a good dissolution efficiency with $H_2SO_4{\geq}HCl$ > $HNO_3$ in order.

• Journal of the Mineralogical Society of Korea
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• v.31 no.1
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• pp.23-32
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• 2018

Noerok ia a green pigment used in Joseon dynasty, and its main usage was for forming foundation layers of Dancheong, the ornamental paintings on the surface of traditional buildings in Korea, such as the Daeung-jeon(main hall) of Bulguk-sa temple. In this research, we investigated the mineralogical characteristic changes of Noerok, a traditional Korean pigment, depending on its firing temperature. The Noerok that we experimented on was mined from Noeseong Mountain, Pohang where it is locally reserved. The major composition mineral is Celadonite, and the main constituent elements are Fe, Si, K and Mg, that refers to the existence of Fe-rich mica. As a result of phased firing experiment from $105^{\circ}C$ to $1000^{\circ}C$, the color was changed from green to pale green, then to brown, and finally to red in order. In the thermal analysis, endothermic reaction induced by the dehydration of crystalline water was confirmed at around $616^{\circ}C$. In the mineralogical change, the crystal surface [($11{\bar{1}}$) and ($02{\bar{1}}$)] of the mineral collapsed at temperatures above $600^{\circ}C$, and iron oxide was formed at $1000^{\circ}C$ or higher. Therefore, it is estimated that the crystallization temperature of Noerok is below $600^{\circ}C$, and it is also considered that it has undergone the alteration phase up to stage I, based on the presence of only a celadonite.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.850-857
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• 1995

VO$_{x}$ and V$_{1-x}$ Sn$_{x}$O$_2$thin films were fabricated on a glass under various $O_2$pressure by reactive e-beam evaporation method. Thermochromism and transition temperatures of these thin films were examined by measuring spectral solar transmittances with spectrophotometer at various temperatures, and their stoichiometries were analyzed by RBS. Oxygen pressure of 5$\times$10$^{-5}$ . Torr was found to be optimum to fabricate near stoichiometric VO$_2$thin film by reactive e-beam evaporation. Rapid thermal annealing(RTA) was adopted to crystallize the thin films and annealing at 40$0^{\circ}C$ ~45$0^{\circ}C$ for 20 ~ 30 seconds was found to be the optimum annealing condition for the crystallization of VO$_2$thin film of 100nm-300nm thickness. 1~6 atomic percent of Sn was doped into VO$_2$thin films to fabricate V$_{1-x}$ Sn$_{x}$O$_2$thin films. These V$_{1-x}$ Sn$_{x}$O$_2$thin films showed distinct thermochromism and significantly higher transition temperatures than VO$_2$thin film.

• Archives of design research
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• v.13 no.1
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• pp.121-130
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• 2000

This study can be expressed by gathered and formed into the exhibition space's structure practical progress/ application. For the one model of fascinating exhibition's space thru inter-space's pertinent adjustment, production between spactator and exhibition constituent on an exhibition story-line, I adjusted the focus to follow mentioned methods systematically for the example; An exhibition space is completed to be very impressive and attractive space by proper adjustment and production of M-M/C interface in exhibition storyline. Quantity space is transfered into quality space through the transmission of an exhibition which can be define as the point of an exhibition structure. And also could de transferd into a bodily sensation space that inherent full of interactive constituent. Changeable exhibition constituents (exhibition item and text) that sporadically expatiated (not trimed, the original form) in the process of an exhibition structure draw much higer quality of the optimal solution in optimize process which is given when aggregate again to contextual flow of synthetic exhibition scenario. Reconstruction of individual exhibition constituents to the new story, that is, transference of exhibition text to exhibition context is inspirit to an exhibition by maximize the exhibition effect in connection can be systematized through carrying out an outcentripetalpart. However, since pattern of an exhibition structure that consequtively meet variety spacetime of an exhibittion environmental can't be exist, this study presents centralizing the exhibition plan of Korea communication pavilion of the annual Expo Comm Wireress Korea, sustained process from design proposal, research and analysis to synthesis, development, transmission and management to an example of an applying crystallization.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.204-210
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• 1997

Zeolite 4A-impregnated complex molecular sieve was prepared by hydrothermal reaction after aluminosilicate gel was penetrated into the pore of activated carbon granule. The crystals of zeolite 4A mainly were formed in the macropore of activated carbon, and their average diameter is $0.8{\mu}m$. The pore volume of activated carbon granule is $0.67m{\ell}/g$, and the pore volume of the sample including 21.6wt% of zeolite 4A crystal is $0.41m{\ell}/g$ decreasing the pore volume by 40% due to the crystallization of zeolite 4A crystals on the internal surface of activated carbon. The calcium ion exchange capacity of zeolite 4A-impregnated sample is 320mg $CaCO_3/g$ zeolite, and this value is almost the same as that of zeolite 4A powder. The crystal of zeolite 4A was not separated from the support of activated carbon granule in the course of ultrasonic dispersion. The adsorption isotherm of water on zeolite 4A-impregnated sample shows the intermediate shape between types, I and III. In addition, zeolite 4A-impregnated sample shows the hydrophilic and hydrophobic properties simultaneously.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.55.2-55
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• 1998

다견정 심리판-거l르마늄(JXlly-SiGe)은 TFT(thin-film transistor)와 갇븐 소자 응용에 있어서 중요한 불칠이다 .. LPCVD (low pressure chemical vapor deposition) 방법으로 비정칠 SiGc (a-SiGe) 박막올 증 착시키고 고상결정화(SPC: solid-phase crystallization)시켜 poly-SiGc옹 얻는 것은 잘 알려져 있다. 그러 나 그러나 PF'||'&'||'pound;VD-SPC 방법올 이용한 poly-SiGc의 제조에 대해서는 아직 두드러지게 연구된 바 없다. 우리단 PF'||'&'||'pound;VD 방법으로 a-SiGc 박막올 증착시키고 고상캘정화시켜 poly-SiGc올 얻었 R며, :~ 결정성, G Gc 농도, 결정핍의 평끌 크기 눔올 XRD (x-ray diffraction) 방법으호 조사하였다. 특히 pr'||'&'||'pound;VD 증착시 가판온도,Gc 함유량 등이 고상화에 미치는 영향에 대해서 조사하였다. P PECVD 장치는 터보펌프콸 사용하여 71저진공이 2xlOlongleftarrow5 Torr에 이르렀다. 가판윤 SiOOO) 웨이퍼륜 사용하고 기판 온도는 약 150- 35()"C 사이에서 변화되었다. 증착가스는 SiH4, GcH4, 112 등흘 썼다. 증착 압력과 r.f 전력용 각각 O.25ToIT와 3W로 일정하게 하였다 .. Gc 함유량(x)은 x x=O.O-O.5 사이에서 변화되었다 .. PECVD모 증착된 SiGc 박막들은 고상결정화를 위해 $\theta$X)"(:: Nz 분위기에서 24시간동안, 혹은 5OO'C에서 4열간 가열되었다. 고상결정화 후 poly-SiGc 박막은 SiGc(Ill), (220), (311) XRD 피크들올 보여주었으며, 각 피 크들은 poly-Si에 비하여 왼쪽으로 Bragg 각이 이동되었고, Vegard’slaw에 의해서 x의 값올 확 인할 수 있었다. 이것온 RBS 결과와 열치하였다. 약 150-350'C 사이에서 변화된 기판온도의 범위 에서 증착온도가 낮올수콕 견정립의 크기는 대체로 증가하는 것으로 나타났다 .. XHD로 추정된 형 균 결정립의 크기는 최대 약 3$\alpha$1m 정도였다. 또한 같끈 샘플뜰에 대해서 기판온도가 낮올수록 증착속도가 증가함옴 확인하였다 .. Gc 함유량이 x=O.1에서 x=O.5로 증가함에 따라서도 결정립의 크기와 SiGc 증착속도는 증가하는 것으로 나타났다 .. Hwang [1] , Kim[2] 둥의 연구자들은 Gc 함유 량이 증가함에 따라 결정 립 크기가 캄소하는 것올 보고하였으냐, Tsai [3] 둥은 반대의 결과플 보 고하고 Ge 힘유량의 증가시 결정립 크기의 증가에 대해 Gc의 Si보다 낮은 융점 (melting point) 올 강조한 바 있다. 결정립 크기의 증가는 대체로 SiGe 중착속도의 증가와도 관련이 있음올 볼 때, poly-SiGc의 경우에도 polv-Si의 고상화에서와 같이 증착속도가 빠를수록 최종적언 결정럽의 크기가 커지는 것으로 이해될 수도 있다 .. PECVD 증착시 증착속도의 증가는 증착된 박딱에서의 무켈서도를 증 가시킬 수 있음올 고려하면, 이라한 결파플온 p이y-SiGc의 고상결정화에서도 ploy-Si의 고상결정 화에서와 마찬가지로 초기 박막에서의 구조직 무절서도가 클수록, 고상결정화 후 결정 립의 크기 가 커칠 수 있음올 보여준다고 생각휠 수 있다,

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.353-359
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• 2000

$(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

• Journal of Life Science
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• v.19 no.1
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• pp.9-14
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• 2009

The prostate cancer is the critical health problem, increasing of its related death in worldwide. Unfortunately present surgery and chemotherapeutic choices seem to be impossible in curing or controlling prostate cancer, because metastasis occasionally advances even after these potentially curative therapies. Therefore, there is immediate need to alternative chemoprevention and chemotherapeutic agents. Over one hundred species of dried medicinal herbs were tested for proliferation inhibitory effects on prostate cancer cell line, PC-3. One of them, Anthriscus sylvestris was selected because of potent anti-proliferation effect. The dried root of A. sylvestris was extracted with 100% methanol for 2-3 days and its extract was fractionated by using ethyl acetate. And ethyl acetate layer was subjected to column chromatographies on silica gel, reverse phase-18 (RP-18) and Sephadex LH-20, in turn. Finally, the pure compound was obtained by crystallization in methanol at $4^{\circ}C$ for overnight and identified as deoxypodophyllotoxin by NMR spedorscopic and physico-chemical analyses. In addition, it was confirmed that deoxypodophyllotoxin clearly inhibits the proliferation of PC-3 cells in a dose and time-dependent manner.