• Applied Chemistry for Engineering
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• v.5 no.3
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• pp.478-500
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• 1994

The preparation of potassium hexatitanate whisker by flux method was investigated. In this study, 8 types synthesis of flux such as $V_2O_5$, $Bi_2O_3$, $B_2O_3$, $Pb_3O_4$, KCl, $K_4P_2O_7$, $K_2WO_4$ and $K_2MoO_4$ were tested to find a suitable flux for the synthesis of potassium hexatitanate whisker. Effects of various reaction variables such as reaction temperature, time, $TiO_2$ mole ratio to $K_2CO_3$, flux mole ratio to the mixture of $K_2CO_3$ and $TiO_2$, and slow-cooling treatment on the crystallization of potassium hexatitanate whisker were investigated. $K_2MoO_4$ and $K_2WO_4$ were better flux than others tested for the synthesis of potassium hexatitanate. In the presence of $K_2MoO_4$ or $K_2WO_4$ flux, the optimum condition for the synthesis of potassium hexatitanate whisker was that reaction temperature of $1000{\sim}1100^{\circ}C$, reaction time of 5 hours, $TiO_2$ mole ratio to $K_2CO_3$ of 6.0, and flux mole ratio to mixture ($K_2O+nTiO_2$) of 4.0. Slow-cooling treatment showed good effect on the growth of long fibrous potassium hexatitanate.

• Applied Chemistry for Engineering
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• v.28 no.2
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• pp.214-220
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• 2017

The spherical Al/RDX/AP composites with an average size of $550{\mu}m$ were successfully prepared by drowning-out/agglomeration (D/A) process. The surface morphology and dispersion of Al particles of those composites were investigated using SEM and EDS (energy dispersive spectrometry). As a result of thermal analysis, the onset temperature of thermal decomposition of the Al/RDX/AP composites by the D/A process was found to decrease about $50^{\circ}C$ and their thermal stability was shown to be relatively enhanced due to the increase of activation energy compared to those of using the physical mixing method. In the first decomposition region of AP, Prout-Tompkins model was shown to describe well the thermal decomposition of both composites by the physical mixing and D/A process. On the other hand, in the second decomposition region of AP, the decomposition mechanisms of composites by the physical mixing and D/A process were explained by the zero-order and contracting volume model, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.1-6
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• 2007

In this study, the pentacene thin films were prepared by the soluble process, and characterized fur the application of the organic thin film transistor(OTFT) device. To dissolve the pentacene material, two kinds of solvents such as toluene and chloroform were used, and the effects of these solvents on the properties of pentacene thin films coated on ITO/Glass substrate were investigated. Pentacene thin films were prepared by using spin-coating methode and characterized the surface morphology, crystalline and electrical properties. From the AFM measurement, the surface morphology of the pentacene film dissolved with chloroform was improved compared with the one dissolved with toluene solvent. XRD measurement showed that all prepared pentacene film samples were amorphous crystal phases without crystallization of the films. The electrical properties of the pentacene film dissolved with chloroform showed better results than the ones using toluene solvent by hall measurement system. The carrier concentration and the mobility values of pentacene films using chloroform solvent were found to be $-3.225{\times}10^{14}\;cm^{-3}$ and $3.5{\times}10^{-1}\;cm^2{\cdot}V^{-1}{\cdot}S^[-1}$, respectively. The resistivity was about $2.5{\times}10^2\;{\Omega}{\cdot}cm$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.115-121
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• 2012

Sapphire single crystals have been highlighted for epitaxial gallium nitride films in high-power laser and light emitting diode (LED) industries. Among the many crystal growth methods, the Kyropoulos process is an excellent commercial method for growing larger, high-optical-quality sapphire crystals with fewer defects. Because the properties and growth behavior of sapphire crystals are influenced largely by the temperature distribution and convection of molten sapphire during the manufacturing process, accurate predictions of the thermal fields and melt flow behavior are essential to design and optimize the Kyropoulos crystal growth process. In this study, computational fluid dynamic simulations were performed to examine the effects of the crucible geometry aspect ratio on melt convection during Kyropoulos sapphire crystal growth. The results through the evolution of various growth parameters on the temperature and velocity fields and convexity of the crystallization interface based on finite volume element simulations show that lower aspect ratio of the crucible geometry can be helpful for the quality of sapphire single crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.298-307
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• 2019

Two types of CaO-Al₂O₃-SiO₂ (CAS) glass powder applied spray coating on the surface of sintered Al₂O₃ were researched for sintering behavior; (1) Si-rich, glass containing high content SiO₂, (2) Ca-rich, containing high content CaO. Foaming of bubbles remaining inside the Ca-rich glass was produced at a viscosity of approximately 10⁷~10⁹ poise, resulting in decreasing shrinkage (interfering with sintering) and increasing surface roughness. In case of Si-rich glass, there was no serious foaming bubbles phenomenon like Ca-rich below 1000℃, however cristobalite crystals with low density occurred at 1200℃ and then produced re-foaming of bubbles, resulting in abnormal sintering behavior. These phenomenon is considered to be a decrease in viscosity due to an increase in the Ca content of the glass according to the formation of low-density cristobalite crystals. Therefore, in case of CAS glass, it is necessary to consider the increase of surface roughness and the sintering interference because of foaming bubbles phenomenon at low temperature sintering. Especially, when containing high SiO₂ content, abnormal foaming phenomenon due to crystallization at high temperature should be predicted.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Journal of Korean Tunnelling and Underground Space Association
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• v.22 no.5
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• pp.485-500
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• 2020

Due to various advantages such as small facilities, ease of construction and so on, the grouting technology which is widely used in construction field has developed remarkably compared with the past. However, the efforts to improve the homogeneity of quality, long-term durability and environmental problems have been continued. In recent years, new grouting method has been developed in order to solve problems such as low strength, durability and leaching phenomenon of liquid glass (sodium silicate) grouting material in Korea. A newly developed method integrates the injection material with the ground by the self-healing material of crystallization growth type. For this reason, it is known that improvement of the durability and water quality of the ground, prevention of leaching, and environment friendliness can be expected. The present study applied a newly developed method to test sites and verified its effect such as injection range, improvement effect, waterproofing performance and so on. Standard penetration test, field permeability test, borehole shear test, pressuremeter test and pH test were conducted, and the results were compared between before and after developed method application. As results of tests, the field applicability and improvement effect of developed method were proved to be excellent.

• Journal of the Korean Society of Food Science and Nutrition
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• v.14 no.4
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• pp.359-364
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• 1985

Being used the three kinds of aqueous solution of tobacco extracts as a new experimental material, experiment and theoretical analysis are performed. Measurements are made with a apparatus designed and constructed by the author.The average diameter of the ice crystals is 0.04-0.1cm between 0.2 and $0.6^{\circ}C$ of the subcooling temperature of the solution. The growth rate of ice crystals in direction of axies A, $V_a$ is in proportion to the subcooling temperature, viz; $v_a=0.058{\Delta}t_b,\;where\;{\Delta}t_b<0.1^{\circ}C$ The growth rate of ice crystal have to be considered not only the mass diffusion and the heat transfer of rate controlling but also the process in ice crystallization. The growth rate of ice crystal is found to be independent on the concentration of the solution and a diameter of ice crystal.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.661-668
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• 2010

Cu(In,Ga)$Se_2$(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM $CuCl_2$, 8 mM $InCl_3$, 20 mM $GaCl_3$ and 8mM $H_2SeO_3$ at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of $Cu_{1.05}In_{0.8}Ga_{0.13}Se_2$ was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-$500^{\circ}C$ under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at $200^{\circ}C$, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of $500^{\circ}C$ for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the $MoSe_2$ phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

• Journal of the Mineralogical Society of Korea
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• v.29 no.3
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• pp.103-111
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• 2016

Li-bearing hectorite, one member of trioctahedral smectite, occurred large in quantity and confirmed in Turkey western sedimentary boron deposit. Li-bearing hectorite attracted a particular attention because it is one of potential lithium resources. There have been no consensus for the change of hectorite due to heat and acid treatment although it is very important to use in industrial application. In this study, we examined changes of hectorite after heat and acid treatment as well as acid treatement followed by heating. We used clay ores collected in Bigadic deposit, which contained the highest $Li_2O$ content in Turkey boron deposits. Hectorite showed a strong endothermic reaction at $84^{\circ}C$ due to dehydration of absorbed water and interlayer water and a weak endothermic reaction above $600^{\circ}C$ owing to dehydration of crystallization water. The first endothermic reaction accompanied a large weight loss about 6%. Hectorite decomposed into enstatite, cristobalite and amorphous Fe material at $762^{\circ}C$ with exothermic reaction. When hectorite reacted with 3 kinds of 0.1 M acid during 1 hours, it had a good dissolution efficiency with $H_2SO_4{\geq}HCl$ > $HNO_3$ in order.