• Title/Summary/Keyword: crystallinity

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m-Aramid Films in Diverse Coagulants

  • Kim, Ji-Young;Jung, Ji-Won;Kim, Sam-Soo;Lee, Jae-Woong
    • Textile Coloration and Finishing
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    • v.21 no.4
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    • pp.63-67
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    • 2009
  • m-Aramid dissolved in N,N-dimethylacetamide (DMAc), were coagulated in different coagulants such as water, methanol, ethanol, propanol and butanol. Various concentrations and temperatures of the coagulants were also used to evaluate dyeing properties of coagulated m-aramid films. Field emission scanning electron microscopy (FE-SEM) was employed to investigate the surface morphology of m-aramid films. Wide angle X-ray diffraction (WAXD) was conducted in order to measure crystallinity change of mcaramid fibers and films. WAXD patterns showed that crystallinity of m-aramid fibers was reduced after film formation. In addition, color depth (K/S value) was measured and the results revealed that the film coagulated in water possessed fairly enhanced color depth.

Electrical and Optical Properties of SnO$_2$: F Thin Films by Reactive DC Magnetron Sputtering Method (반응성 DC 마그네트론 스퍼터법에 의한 SnO$_2$ : F 박막의 전기광학적 특성)

  • 정영호;김영진;신재혁;송국현;신성호;박정일;박광자
    • Journal of the Korean institute of surface engineering
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    • v.32 no.2
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    • pp.125-133
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    • 1999
  • Fluorine-doped $SnO_2$ thin films were deposited on soda-lime glass substrates by reactive DC magnetron sputtering method. Crystallinity as well as electrical and optical properties of $SnO_2$ : F thin film were investigated as the variations of deposition conditions such as substrate temperature, DC Power, $O_2$ gas pressure, $SF_6$ gas pressure. $SnO_2$ : F thin film deposited with 5% $SF_6$ gas pressure showed electrical resistivities of $2.5\times10^{-3}$cm with the average optical transparency (about 80%) These electrical and optical properties were found to be related to the crystallinity of $SnO_2$ : F thin films.

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A Study on the characteristics of polycrystalline silicon thin films prepared by solid phase cyrstallization (고상 결정화에 의해 제작된 다결정 실리콘 박막의 특성 연구)

  • 김용상
    • Electrical & Electronic Materials
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    • v.10 no.8
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    • pp.794-799
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    • 1997
  • Poly-Si films have been prepared by solid phase crystallization of LPCVD(low-pressure CVD) amorphous silicon. The crystallinity of poly-Si films has been derived from UV reflectance spectrum and lies in the range between 70% and 80% . From XRD measurement the peak at 28.2$^{\circ}$from (111) plane is dominantly detected in the SPC poly-Si films, The average grain size of poly-Si film is determined by the image of SEM and varies from 4000 $\AA$ to 8000$\AA$. The electrical conductivity of as-deposited amorphous silicon film is about 2.5$\times$10$^{-7}$ ($\Omega$.cm)$^{-1}$ , and 3~4$\times$10$^{-6}$ ($\Omega$.cm)$^{-1}$ of room temperature conductivity is the SPC poly-Si films. The conductivity activation energies are 0.5~0.6 eV or the 500$\AA$-thick poly-Si films.

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Physicochemical Changes in UV-Exposed Low-Density Polyethylene Films

  • Salem, M.A.;Farouk, H.;Kashif, I.
    • Macromolecular Research
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    • v.10 no.3
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    • pp.168-173
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    • 2002
  • Unstabilized low-density polyethylene (LDPE) films and films formulated with hindered amine light stabilizer (HALS) were exposed to UV-radiation; and the physicochemical changes during photooxidation processes have been investigated using tensile, FTIR spectre-photometric and thermal analytical (DSC) techniques. The dependence of tensile properties (elongation- and stress-at-break), carboxyl index and heat of fusion on UV-irradiation time have been discussed. The use of HALS is found to be effective in maintaining the UV-mechanical properties of the LDPE films. The experimental results showed that there exists no correlation between mechanical properties and carbonyl index, whereas crystallinity correlates well with carbonyl index in unstabilized and stabilized films for irradiation times greater than 100 h. The rate of formation of carbonyl groups is found to be dependent on UV exposure time. Crystallinity of the film samples is strongly influenced by both exposure time and presence of HALS.

On the Relation Between the Crystallite Diameters and the Physical Properties of Soft and Hard Carbons by Heat Treatment Temperature (熱處理溫度에 따른 Soft Carbon과 Hard Carbon 結晶子 크기와 物理的 特性)

  • Ju Seong Lee
    • Journal of the Korean Chemical Society
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    • v.13 no.4
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    • pp.395-399
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    • 1969
  • On the soft carbon made from petroleum coke, it was found that the graphitization began at around 2,000$^{\circ}C and crystallite diameters were almost saturated at 2,400$^{\circ}C., and that the molecular planes were difficult to arrange into an ideal graphite lattice in spite of the saturation of crystallinity by heat treatment temperature. On the hard carbon made from cross-linked thermosetting plastics, phenol-formaldehyde filler and phenol-benzaldehyde binder, it was very difficult to rotate the molecular planes into a regular directional arrangement and into a consecutive order corresponding to the large graphite crystals. In addition to the above mentioned crystallinity, it was also determined in relation to electric conductivity, resistivity, hardness and apparent density of carbons.

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Synthesis of Tantalum Oxy-nitride and Nitride using Oxygen Dificiency Tantalum Oxides (산소결핍 탄탈륨 산화물을 활용한 탄탈륨 산질화물 및 질화물 합성)

  • Park, Jong-Chul;Pee, Jae-Hwan;Kim, Yoo-Jin;Choi, Eui-Seock
    • Journal of Powder Materials
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    • v.15 no.6
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    • pp.489-495
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    • 2008
  • Colored tantalum oxy-nitride (TaON) and tantalum nitride ($Ta_{3}N_{5}$) were synthesized by ammonolysis. Oxygen deficient tantalum oxides ($TaO_{1.7}$) were produced by a titration process, using a tantalum chloride ($TaCl_5$) precursor. The stirring speed and the amount of $NH_{4}OH$ were important factors for controling the crystallinity of tantalum oxides. The high crystallinity of tantalum oxides improved the degree of nitridation which was related to the color value. Synthesized powders were characterized by XRD, SEM, TEM and Colorimeter.

Effects of Gas Flow Variables on the Crystal Growth of Diamond in Hot Filament-Assisted CVD (고온 필라멘트 다이아몬드 CVD에서 기체유동변수가 결정성장에 미치는 영향)

  • 서문규;이지화
    • Journal of the Korean Ceramic Society
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    • v.31 no.1
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    • pp.88-96
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    • 1994
  • Hot filament-assisted CVD was carried out to deposit diamond films on Si(100) substrate at 90$0^{\circ}C$ using a 1% CH4-H2 mixture gas. Deposition was made at various conditions of mass flow rate of the feed gas (30~1000 sccm), pressure (2.5~300 Torr), and filament-substrate distance (4~15 mm), and the deposited films were characterized by SEM, XRD, and Raman spectroscopy. As the flow rate increases, the growth rate also increased but the crystallinity of the film was degraded. A longer filament-substrate distance simply caused both the growth rate and the crystallinity to become poorer. On the other hand, the pressure variation resulted in a maximum growth rate of 2.6 ${\mu}{\textrm}{m}$/hr at 10 Torr and the best film quality around 50 Torr, exhibiting an optimum condition. The observed trends were interpreted in terms of the flow velocity-dependent pyrolysis reaction efficiency and mass transport through the boundary layer.

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A Study on the Photoluminescence of Boron lon Implanted GaAs (Boron 이온이 주입된 GaAs의 열처리에 따른 발광특성에 관한 연구)

  • 최현태;손정식;배인호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.9
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    • pp.700-704
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    • 1998
  • In this paper, the optical properties of boron ion implanted GaAs were investigated by photoluminescence(PL) measurements. The implantations were preformed at room temperature with the energy of 150 eV. The range of implanted dose was $10^{12}~10^{15} ions/cm^2$. The boron implanted samples were annealed between $450^{\circ}C$ and $800^{\circ}C$ for 20 minutes. The crystallinity of low dosed samples were increased with increasing annealing temperature up to $700^{\circ}C$ while that of the high dosed($10^{15} ions/cm^2$) was almost same. From the samples with dose of $10^{14}~10^{15} ions/cm^2$, two emission bands were observed at 1.438 eV (B1) and 1.459 eV (B2) after the thermal treatment. These emission bands seems to be attributed to the $B_{Ga}$-defect complex.

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Relationship of the pretill angle and nematic liquid crystals on LCD (LCD에 있어서의 네마틱 액정과 프리틸트각의 발생과의 관계)

  • 서대식;유문상;황정연
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.263-266
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    • 1998
  • In this study, the effect of the crystallinity of polyimide (Pl) and the birefringence of the nematic liquid crystal (NLC) for pretilt angle generation on rubbed PI surface containing thiophenylene moieties has been demonstrated. The induced optical retardation produced in rubbed Pl surfaces decreases on increasing the imidization temperature. We suggest that the pretilt angle of 4-cyano-4'-n-pentybiphenyl (5CB) depends on the crystallinity of the rubbed Pl. The order of pretilt angle in NLCs is 5CB>PCH5$\geq$CCH5 at rubbing strength(RS)=150mm (medium rubbing) on rubbed PI surfaces. We suggest that on rubbed Pl surfaces the pretilt angle increases with increasing number of phenylrings in the NLC core.

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Synthesis of Diamond Thin Films by Rf Plasma Assisted Chemical Vapor Deposition (RF 플라즈마 CVD법에 의한 다이아몬드 박막의 합성)

  • 이상희;이덕출
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.7
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    • pp.552-556
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    • 1998
  • Diamond thin films were deposited on Si substrate using $CH_4 and H_2$mixed gas by RF plasma CVD. Prior to deposition, the substrate surface was mechanically scratched with the diamond paste of $3{\mu}m$ to improve the density of nucleation sites. The microstructure of diamond films deposited with methane(0.5%~2%) at the reaction pressure ranging from 20 torr to 50torrr were studied by a scanning electron microscope. It was observed in the deposited diamond films that the nucleation density decreased and crystallinity increased with decreasing the methane concentration. However, the nucleation density and crystallinity were decreased with decreasing the process pressure.

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