• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.365-365
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• 2010

In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher $NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.10-14
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.

• 설비공학논문집
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• 제27권7호
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• pp.375-379
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• 2015

A proper estimate of solar cell efficiency is of great importance for the feasibility analysis of solar cell power plant development. Since solar cell efficiency depends on temperature, several methods have been introduced to measure it by operating temperature modulation. However, the methods either rely on the external environment or need expensive equipment. In this paper, a thermoelectric module was used to control the operating temperature of crystalline silicon solar cells effectively and precisely over a wide range. The output characteristics of crystalline silicon solar cells in response to operating temperatures from $-5^{\circ}C$ to $100^{\circ}C$ were investigated experimentally. Their efficiencies decreased as the temperature rose, since the decrease in the open circuit voltage and fill factor exceeded the increase in the short circuit current. The maximum power temperature coefficient of the single crystalline solar cell was more sensitive to temperature change than that of the polycrystalline solar cell.

• 한국진공학회지
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• 제21권1호
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• pp.29-35
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• 2012

수소화된 실리콘 질화막은 결정질 태양전지 산업에서 반사방지막과 패시베이션 층으로 널리 사용되고 있다. 또한, 수소화된 질화막은 금속 소성공정과 같은 높은 공정온도를 거친 후에도 결정질 실리콘 태양전지의 표면층으로서 충족되는 특성들이 변하지 않고 유지 되어야 한다. 본 연구에서는 Plasma enhanced chemical vapor deposition 장치를 이용한 수소화된 실리콘 질화막의 특성 변화에 대한 경향성을 알아보기 위하여 증착조건의 변수(온도, 증착거리, 무선주파수 전력, 가스비율 등)들을 다양하게 가변하여 증착조건의 최적화를 찾았다. 이후 수소화된 실리콘 질화막의 전구체가 되는 사일렌($SiH_4$)과 암모니아 ($NH_3$) 가스비를 변화시켜가며 결정질 실리콘 태양전지에 사용되기 위한 박막의 광학 전기 화학적 그리고 표면 패시베이션 특성들을 분석하였다. 가스 비율에 따른 수소화된 실리콘 질화막의 굴절율 범위는 1.90~2.20까지 나타내었다. 결정질 실리콘 태양전지에 사용하기 위한 가장 적합한 특성은 3.6 ($NH_3/SiH_4$)의 가스비율을 나타내었다. 이를 통하여 $156{\times}156mm$ 대면적 결정질 실리콘 태양전지를 제작하여 17.2 %의 변환 효율을 나타내었다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.237-242
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• 2012

At present, crystalline solar cells take up a significant percentage of the solar industry. The ways of increasing the efficiency of crystalline solar cell are texturing and AR(Anti-Reflection) coating, and the purpose of these technologies is to increase the amount of available light on the solar cell by reducing the reflectivity. The reflectance of crystalline silicon solar cell combined with such technologies will be able to predict using the proposed simulation in this paper. The simulation algorithm was made using MATLAB, and it is a combination of the theories of reflection in textured wafer and in anti-reflection coated wafer. The simulation results were divided into three wavelength band and were compared with actual reflectance measured by a spectrometer. The wavelength band from 300 to 380 was named ultraviolet region and the wavelength band from 380 to 780 is named visible region. Finally, the wavelength band from 780 to 1200 named infrared region. When compared with measured reflection data, the simulation results had a small error from 0.4 to 0.5[%] in visible region. The error occurred in the rest two regions is larger than visible region. The extreme error occurred the infrared region is due to internal reflection effect, but in the ultraviolet region, the rationale on reduction phenomenon of reflectance occurred in small range did not proved. If these problem will be solve, this simulation will have high reliability more than now and be able to predict the reflectance of solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.38-38
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• 2009

Wafer thickness of crystalline silicon is an important factor which decides a price of solar cell. PC1D was used to fix a condition that is required to get a high efficiency in a crystalline silicon solar cell using thin wafer($150{\mu}m$). In this simulation, base resistivity and emitter doping concentration were used as variables. As a result of the simulation, $V_{oc}$=0.6338(V), $I_{sc}$=5.565(A), $P_{max}$=2.674(W), FF=0.76 and efficiency 17.516(%) were obtained when emitter doping concentration is $5{\times}10^{20}cm^{-3}$, depth factor is 0.04 and sheet resistance is $79.76{\Omega}/square$.

• 한국재료학회지
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• 제9권1호
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• pp.99-103
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• 1999

We investigated the crystalline behavior in active ion implanted silicon through Raman spectroscopy. Four a-Si(amorphous Si) peaks were observed that are related to the ion implantation induced a-Si layer. After the isochronical anneal(30min). and isothermal anneal($450^{\circ}C$), noticeable recovery of crystalline-Si peak at 519cm\ulcorner and peak center shift of the a-Si TO from 465cm\ulcorner to 480cm\ulcorner were observed by RNM(Random Network Model). By applying RNM and SCLM(Spatial Correlation Length Model), the peak center and FWHM(the Full Width at half Maximum) of a-Si were changed dramatically between T\ulcorner=$200^{\circ}C$ and 30$0^{\circ}C$. From the results, it can be said that there is an abrupt structural change at this temperature region.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.55-61
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• 2003

This paper describes how the optical properties of a quasi-one-dimensional photonic crystalline waveguide having a periodic air cavity are influenced by various structural parameters; the electromagnetic fields are simulated using the finite-difference time-domain method. The simulations considered four design parameters: cavity size, defect size, lattice constant, and number of cavity. The parameter sensitivity of the photonic bandgap property of the waveguide having air cavities is examined. A couple of significant design guidelines are obtained. We show that the quasi-one-dimensional photonic crystalline waveguide has significant unrealized potential.

• 한국기계가공학회지
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• 제12권5호
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• pp.30-35
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• 2013

In order to increase cell efficiency in crystalline silicon solar cell, reduction of light reflection is one of the essential problem. Until now silicon wafer was textured by wet etching process which has random patterns along crystal orientation. In this study, high aspect ratio patterns are manufactured by nano imprint process and reflectance could be minimized under 1%. After that, screen printed solar cell was fabricated on the textured wafer and I-V characteristics was measured by solar simulator. Consequently cell efficiency of solar cell fabricated using the wafer textured by nano imprint process increased 1.15% than reference solar cell textured by wet etching. Internal quantum efficiency was increased in the range of IR wave length but decreased in the UV wavelength. In spite of improved result, optimization between nano imprinted pattern and solar cell process should be followed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.