• Journal of the Optical Society of Korea
• /
• 제18권5호
• /
• pp.589-593
• /
• 2014

Terahertz (THz) communication has important applications in high-speed and ultra broadband wireless access networks. The THz modulator is one of the key devices in a THz communications system. Wavelength division multiplexing (WDM) can expand the capacity of THz communications systems, so research on multi wavelength THz modulators has significant value. By combining photonic-crystal and THz technology, a novel type of multi wavelength THz modulator based on a triple-lattice photonic crystal is proposed in this paper. Compared to a compound-lattice photonic crystal, a triple-lattice photonic crystal has a larger gap width of 0.196. Simulation results show that six beams of THz waves can be modulated simultaneously with high performance. This modulator's extinction ratio is as large as 34.25 dB, its insertion loss is as low as 0.147 dB, and its modulation rate is 2.35 GHz.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
• /
• pp.253-269
• /
• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.82-85
• /
• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by DCXD(Double Crystal X-ray Diffraction). The sample quality of crystalline sapphire wafer at surface has a FWHM(Full Width at Half Maximum) of 250 arcsec. This value at the sapphire wafer surfaces indicated 0.12${\mu}{\textrm}{m}$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Also Surfaces roughness of sapphire wafers were measured 2.1 by AFM(Atom Force Microscope).

• 전기학회논문지
• /
• 제58권12호
• /
• pp.2416-2419
• /
• 2009

We performed frequency response measurements of four tuning fork crystal oscillators with different sizes and analyzed their measured electrical equivalent circuit parameters of R, L, $C_S$, and $C_P$ as functions of the linear dimensions, length, width, and thickness. We observed that R and L showed an decreasing behavior with increasing length while $C_S$, and $C_P$ showed an increasing behavior. Similar dependences of the electrical parameters on thickness were also observed. On the contrary, any noticeable dependence of these parameters on width has not been found.

• Journal of Welding and Joining
• /
• 제19권4호
• /
• pp.423-428
• /
• 2001

The bonding phenomena of Ni base single crystal superalloy. CMSX-4 during transient liquid phase(TLP) bonding was investigated using MBF-80 insert metal. Bonding of CMSX-4 was carried out at 1,373∼1,548K for 0∼19.6ks in vacuum. The (001) orientation of each test specimen was aligned perpendicular to the bonding interface. The dissolution width of base metal was increased when the bonding temperature and holding time were increased. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process. Borides were formed in the bonded layer during TLP bonding operation. The solid phase grew epitaxially into the liquid phase from substrates and single crystallization could be readily achieved during the isothermal solidification.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.446-447
• /
• 2006

We investigated the electro-optic characteristics of a fringe-field driven twisted nematic (TN) display using a LC with negative dielectric anisotropy depending on electrode structures. The fringe-field driven TN mode known to exhibit wide viewing angle and excellent color characteristics over a wide viewing range and high transmittance. However, when the electrode width and distance between them is large enough, the transmittance is lower than the conventional vertical field-driven TN mode. By narrowing the electrode width and distance, the transmittance reaches the same value of the conventional TN mode.

• Journal of the Korean Wood Science and Technology
• /
• 제26권4호
• /
• pp.20-25
• /
• 1998

Radial variation of crystalline state in a stem of Chamaecyparis obtusa E. was examined by x-ray diffraction analyses. Relative crystallinity and degree of crystallite orientation showed significant differences between juvenile and adult wood. That is, Relative crystallinity increased with increasing the age from pith to about 20th annual ring, after which it reached a more or less constant value. On the other hand, degree of crystallite orientation decreased outward from pith to about 10 years and presented almost a constant value thereafter. Crystal width by Scherrer's equation did not show any significant differences between juvenile and adult wood. Therefore, it was considered that crystallinity index and degree of crystallite orientation by x-ray diffraction method could be used for evaluating wood quality.

• 한국광학회:학술대회논문집
• /
• 한국광학회 1999년도 제16회 광학 및 양자전자 학술발표회Proceedings of 16th Optics and Quantum Electronics Conference, 1999
• /
• pp.74-75
• /
• 1999

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.253-259
• /
• 1997

The iron doped GaAs single crystals were grown by liquid phase epitaxial method and its some physical properties were evaluated with a view to investigate the crystal quality and emission property. The isomer shift of 0.303mm/sec is calculated from low-temperature M ssbauer spectroscopy and we know that charge state of iron ion is 3+ in GaAs crystal. In low temperature photoluminescence, the deep emission bands with wide-line width have been observed at 0.99eV and 1.15eV in addition to sharp excitonic peaks. We attributed that these deep emissions are originated from substitutional Fe-acceptor which has charge state of 3+ and 2+, respectively.

• 한국결정성장학회지
• /
• 제8권1호
• /
• pp.124-130
• /
• 1998

양극반응 전류밀도를 변화시키면서 다공질 규소를 제작하여 라만산란을 관측하였다. 전류밀도가 증가함에 따라 라만신호는 520.5$\textrm{cm}^{-1}$에서 멀어졌으며, 봉우리의 반치폭이 증가하였다. 또한 전류밀도 증가에 따라 원통형 다공질 결정의 직경은 감소함이 계산되었으며, 길이가 길어짐을 AFM으로 관찰하였다.