• Title/Summary/Keyword: crystal orientation

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Fabrication and Electrical Properties of High Tc $A_{2}B_{2}O_{7}$ Piezoelectric Ceramics Using the Powders Prepared by the Chemical Coprecipitation Method (화학적공침법에 의한 $A_{2}B_{2}O_{7}$ 고온압전세라믹스의 제작과 전기적 특성)

  • Son, Chang-Heon;Jeon, Sang-Jae;Nam, Hyo-Duk
    • Journal of Sensor Science and Technology
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    • v.6 no.4
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    • pp.316-327
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    • 1997
  • Polycrystalline $Sr_{2}Nb_{2}O_{7}$ and $La_{2}Ti_{2}O_{7}$ ceramics with very high Curie temperatures were synthesized by the chemical coprecipitation method (CCP). The powders synthesized were identified by XRD and their sintering behavior and physical properties were studied. The grain-orientation and electrical properties of sintered ceramics were investigated as a function of firing temperature. Single phase could be obtained by CCP method at temperature lower than that of the conventional method by 100 - $150^{\circ}C$. Strontium niobate, $Sr_{2}Nb_{2}O_{7}$, powder was Prepared by CCP method at temperatures as low as $800^{\circ}C$ via intermediate phase of $Sr_{5}Nb_{4}O_{15}$ formed at $700^{\circ}C$. The resulting CCP-derived powder was observed to have finer and more uniform particle size distribution than those obtained through the conventional or the molten salt synthesis method. Sintering of CCP-derived $Sr_{2}Nb_{2}O_{7}$ powder at $1500^{\circ}C$ yielded a highly dense ceramics with 97% theoretical density. Very high grain-orientation developed along the (0k0) direction was observed by SEM, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal.

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Ion beam irradiation for surface modification of alignment layers in liquid crystal displays (액정 디스플레이 배향막을 위한 이온빔 표면조사에 관한 연구)

  • Oh, Byeong-Yun;Kim, Byoung-Yong;Lee, Kang-Min;Kim, Young-Hwan;Han, Jeong-Min;Lee, Sang-Keuk;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04a
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    • pp.41-41
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    • 2008
  • In general, polyimides (PIs) are used in alignment layers in liquid crystal displays (LCDs). The rubbing alignment technique has been widely used to align the LC molecules on the PI layer. Although this method is suitable for mass production of LCDs because of its simple process and high productivity, it has certain limitations. A rubbed PI surface includes debris left by the cloth, and the generation of electrostatic charges during the rubbing induces local defects, streaks, and a grating-like wavy surface due to nonuniform microgrooves that degrade the display resolution of computer displays and digital television. Additional washing and drying to remove the debris, and overwriting for multi-domain formation to improve the electro-optical characteristics such as the wide viewing angle, reduce the cost-effectiveness of the process. Therefore, an alternative to non-rubbing techniques without changing the LC alignment layer (i.e, PI) is proposed. The surface of LC alignment layers as a function of the ion beam (IE) energy was modified. Various pretilt angles were created on the IB-irradiated PI surfaces. After IB irradiation, the Ar ions did not change the morphology of the PI surface, indicating that the pretilt angle was not due to microgrooves. To verify the compositional behavior for the LC alignment, the chemical bonding states of the ill-irradiated PI surfaces were analyzed in detail by XPS. The chemical structure analysis showed that ability of LCs to align was due to the preferential orientation of the carbon network, which was caused by the breaking of C=O double bonds in the imide ring, parallel to the incident 18 direction. The potential of non-rubbing technology for fabricating display devices was further conformed by achieving the superior electro-optical characteristics, compared to rubbed PI.

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Second Harmonic Rotational Anisotropy of Polycrystalline Fe Films on Glass Substrates (유리 위에 증착된 다결정 Fe 자성박막의 이차조화파 회전 이방성)

  • Lee, Feel;Jeong, Jae-Woo;Lee, Hun-Sung;Lee, Kyung-Dong;Kim, Ji-Wan;Shin, Sung-Chul
    • Journal of the Korean Magnetics Society
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    • v.19 no.2
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    • pp.47-51
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    • 2009
  • The surface structure of polycrystalline Fe films of various thicknesses on glass substrates have been studied using a Ti: Sapphire laser at 780 nm. We found that the surface structure possesses C$_s$ crystal structure close to $C_{2v}$ through symmetry consideration. We present one-fold intensity profile with one mirror plane in second harmonic (SH) intensity as a proof of $C_s$ symmetry. $C_s$ and $C_{2v}$ surface symmetries usually appear at the (110) surface of a cubic diamond single crystal [1]. Therefore this surface symmetry would be related to bcc (110) growth orientation coinciding with XRD measurement. Further we treated surface normalized SH asymmetry with various thicknesses. The SH asymmetry increases with increasing of film thickness. From these results, it is observed that the surface structure of thin polycrystalline Fe film below 5 nm is almost isotropic, while in the case of the thicker Fe films, surface structure have $C_s$ symmetry structure close to $C_{2v}$.

Photo Spacer Induced Bistable Mode Plastic PSFLCDs for High Mechanical Stability

  • Kim, Yu-Jin;Park, Seo-Kyu;Kwon, Soon-Bum;Lee, Ji-Hoon;Son, Ock-Soo;Lim, Tong-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.489-492
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    • 2005
  • We report new polymer stabilized ferroelectric liquid crystal (PSFLC) cells with mechanical stability which is achievable by introducing photospacers in the cells. It was found that the mechanical st ability of the PSFLC cell was effected by introduction of photo spacers. We analyzed the dependence of mechanical stability and memory property on the density of photospacers in the PSFLC cell. The stability and memory properties of PSFLC Cells depending on photospacer density are discussed. 1. Introduction Recently, flexible displays have attracted much attention because they have remarkable advantages: thinner, lighter, non-breakable and conformable features. Flexible displays have various potential applications such as e-book and e-paper displays utilizing the distinct features. E-book and E-paper displays demand very low power consumption, so that bistable memory liquid crystal modes are required in case of flexible plastic LCDs for those application. Three kinds of memory LC modes have been developed; bistable nematic, bistable cholesteric and bistable FLC. Among them SSFLC as one of bistable FLC has big advantages such as low driving voltage, wide view angle and fast response time, SSFLC cells are, however, very weak against mechanical shock. Polymer stabilized FLC (PSFLC) has been developed to overcome the poor mechanical stability of SSFLC. PSFLC was known to have network structure that FLCs are oriented with smectic layer ordering in polymer network. The polymer network stabilizes the FLC orientation, which leads to improvement of mechanical stability of PSFLCD. A lot of studies have been done for the application of PSFLC to flexible $LCDs.^{[1{\sim}12]}$ However, it should be noted that PSFLC does not have sufficient mechanical stability for the particular applications such as smart card LCD, where LCD is highly bendable.Bead spacer was mainly used to maintain cell gap of conventional PSFLCDs. But the spacer density of it is not locally uniform in the cell, so that it is generally difficult that the PSFLCDs with bead spacers show sufficient mechanical stability. In order to more improve the mechanical stability of PSFLCDs, we introduced photospacers into PSFLCDs. In this paper, we describe the improvement of mechanical stability by introducing photospacers into PSFLCDs.

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Microstructure and Magneto-Optical Properties of MnSbX(X=PT,Ag) Alloy Films (MnSbX(X=Pt, Ag) 합금막의 미세구조 및 자기광학적 특성)

  • 송민석;이한춘;김택기;김윤배
    • Journal of the Korean Magnetics Society
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    • v.8 no.3
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    • pp.156-160
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    • 1998
  • Crystal structures and magneto-optical properties of $(Mn_{0.5-Z}Sb_{0.5+Z})_{100-y}Pt_y$ (0$(Mn_{0.5-Z}Sb_{0.5+Z})_{100-y}Ag_y$ (0$^{\circ}C$ are C1b-type with fcc and NiAs-type with hcp, respectively. The MnSbAg films have a texture which the c-axis orientation is perpendicular to the film plane by annealing at 300 $^{\circ}C$ for less than 3 hours. The perpendicular anisotropy constants of the $Mn_{47.4}Sb_{47.5}Ag_{5.1}$ film annealed at 300 $^{\circ}C$ for 3 hours are $K_1=6.6{\times}10^5 \; erg/cm^3\;and\;K_2=1.9{\times}10^5\; erg/cm^3$. The Kerr rotation angle of MnSbPt films increases but that of MnSbAg film decreases by decreasing incident wavelength within the range of 700$\leq$ λ$\leq$1000 nm. High polar Kerr angles of 1.7$^{\circ}$ (λ =700 nm) and 0.6$^{\circ}$ (λ =1000 nm), 0.2$^{\circ}$ (λ =700 nm) and 0.97$^{\circ}$ (λ =1000 nm) have been obtained from $Mn_{41.1}Sb_{44,9}Pt_{14.0}$ and $Mn_{47.4}Sb_{47.5}Ag_{5.1}$ alloy films, respectively.

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Daylighting Performance of Office Space Applied with Electrochromic Façade System (전기변색 외피시스템 적용 업무공간의 채광 성능 분석)

  • Kim, Jae-Hyang;Han, Seung-Hoon
    • Land and Housing Review
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    • v.13 no.1
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    • pp.131-140
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    • 2022
  • A smart window is a new building material that can realize energy savings in a building. Smart windows can freely adjust Visible Light Transmittance (VLT) and solar gain coefficient (g-value) according to the situation. Smart windows include such technologies as Electrochromic (EC), Suspended Particle Device (SPD), and Polymer Dispersed Liquid Crystal (PDLC). Recent research on building energy savings through the VLT and g-value control functions of smart windows is being actively conducted and meaningful results are being drawn. However, since most of the research is focused on energy savings, research on the indoor environment is somewhat lacking. A building is a space where people live and the comfort of life should be prioritized before energy savings. Therefore, in this study, analysis on the daylight performance of an office space was carried out. Through green building standards such as LEED, BREEAM, CASBEE, and G-SEED, the daylight performance was reviewed according to VLT value changes of the smart window. In addition, a study was conducted on the VLT range of the electrochromic façade that can maintain a comfortable indoor environment. The smart window used electrochromic control with a wide range of VLT. The study showed that the minimum VLT of a smart window that can satisfy G-SEED is 25% or more. In addition, it was found that the VLT change of the electrochromic smart window did not significantly affect the uniformity of the room. When the LEED standard was applied, the minimum VLT value of the electrochromic smart window that must be maintained according to each orientation of the building was derived.

Effect of Deposition and Heat Treatment Conditions on the Electrical and Optical Properties of AZO/Cu/AZO Thin Film (증착 및 열처리 조건에 따른 AZO/Cu/AZO 박막의 전기적·광학적 특성 평가)

  • Chan-Young Kim;Ha-Eun Lim;Gaeun Yang;Sukjeang Kwon;Chan-Hee Kang;Sang-Chul Lim;Taek Yeong Lee
    • Korean Journal of Materials Research
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    • v.33 no.4
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    • pp.142-150
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    • 2023
  • AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9×10-4 Ω·cm and about 1.0×10-4 Ω·cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 ℃.

Fabrication of PLT target and thin film formation by rf-magnetron sputtering method ($PLT(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$ 타켓의 제조 및 rf-magnetron sputtering법으로 박막 형성)

  • Jung, J.M.;Cho, S.H.;Park, S.G.;Choi, S.Y.;Kim, K.W.
    • Journal of Sensor Science and Technology
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    • v.6 no.1
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    • pp.56-62
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    • 1997
  • Using a rf-magnetron sputtering method, highly c-axis oriented La modified $PbTiO_{3}$ (PLT) ferroelectric thin films with compositions of $(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$, where x=0.05, x=0 and x=0.15, have been obtained on (100)MgO single crystal substrate under conditions of low gas pressure. The degree of c-axis orientation of PLT films decreases with increasing gas pressure and with increasing La contant. These films were characterized by X-ray diffraction and SEM. PLT thin films of x=0.05, 0.1 and 0.15 show a low dielectric constant of 218, 246 and 361 at 1 kHz and remanent polarization(Pr) of $9{\mu}C/cm^{2}$, $8{\mu}C/cm^{2}$ and $7{\mu}C/cm^{2}$.

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Growth of $BaTiO_3$ Single Crystals by TSSG Technique (TSSG법에 의한 $BaTiO_3$ 단결정 육성)

  • 박봉모;정수진
    • Korean Journal of Crystallography
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    • v.3 no.2
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    • pp.120-128
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    • 1992
  • Single crysals of BaTiO3 were grown by TSSG technique at various cooling rates. Morpolo girts, defects and domain structures of the grown crystals were investigated. At the cooling rates below 0.5℃/hr, equant single crystals were obtained and the 11111 faces were dominantly developed. If the cooling rate was much faster or if the vortical temperature gradient in the so lotion was very large, the solution became unstable and the needle formed BasTil04 o crystals were precipitated. Two sets of parallel lamella domains are arranged perpendicular to each other and the irregularly shaped boundaries are fixed between them. These sets of domains show remarkable orientation contrast in x-ray topography. Heating the crystal above 127℃, the phase transition from tetragonal to cubic occurs. The phase transition front (PTF) moves in the direction of temperature gradient. Domains in the tetragonal phase are successively rearranged and regular strain patterns appear in the cubic phase. The habit plane of PTF in BaTi03 is found to deviate from a l1101 lattice plane by app roximately 9°.

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Epitaxial Growth of Boron-doped Si Film using a Thin Large-grained Si Seed Layer for Thin-film Si Solar Cells

  • Kang, Seung Mo;Ahn, Kyung Min;Moon, Sun Hong;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.2 no.1
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    • pp.1-7
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    • 2014
  • We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.