• Journal of Magnetics
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• 제10권1호
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• pp.23-27
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• 2005

The crystallographic and magnetic properties of a series of substitutions in nickel ferrite where the Fe³⁺ is replaced with In³⁺ have been investigated using X-ray diffraction (XRD) and Mössbauer spectroscopy. Information on the exact crystalline structure, lattice parameters, bond lengths and bond angles were obtained by refining their XRD profiles by a Rietveld method. All the crystal structures were found to be cubic with the space group Fd/3m. The lattice constants increased with In³⁺ concentration. The expansion of the tetrahedron was outstanding, indicative of the tetrahedral (A) site preference of larger indium ion. The Mossbauer spectra showed two sets of sextuplet originating from ferric ions occupying the tetrahedral sites and the octahedral (B) sites under the Neel temperature T_N. Regardless of the composition x, the electric quadrupole splitting was zero within the experimental error. At x = 0.2, the magnetic hyperfine fields increased slightly, which meant that the nonmagnetic indium ions occupied preferentially the A-site. At the same time, the intensity of the B-site sub-spectra decreased markedly at the elevated temperature, indicating that the occupation of the A site by indium induced a considerable perturbation on the B site.

• Journal of the Korean Chemical Society
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• 제33권1호
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• pp.82-89
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• 1989

The fluorescence of $Eu^{3+},\;Tb^{3+}$ substituted for $La^{3+}$ in Lanthanum Oxychloride (LaOCl) has been studied. The fluorescence intensity of the $Eu^{3+},\;Tb^{3+}$ in LaOCl excited by Ultra-violet light were investigated on its activator concentration and discussed as the energy transfer process. The energy transfer from $Tb^{3+}\;to\;Eu^{3+}$ take place in the $Eu^{3+}\;and\;Tb^{3+}$ codoped LaOCl crystal. This process was confirmed to the change of concentration and the measurement of fluorescence decay time.

• Journal of the Korean Ceramic Society
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• 제56권3호
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• pp.308-316
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• 2019

CdS_xSe_1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제24권8호
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• pp.659-663
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• 2011

[ $Y_{1-x}BO_3:Tb_x^{3+}$ ]ceramic phosphors were synthesized with changing the concentration of $Tb^{3+}$ at a sintering temperature of $1,100^{\circ}C$ and a reduction temperature of $950^{\circ}C$ by using a solid-state reaction method. The crystal structure, surface morphology, and photoluminescence properties of the phosphors were investigated as a function of $Tb^{3+}$ ion concentration by using XRD (x-ray diffractometer), scanning electron microscopy, and photoluminescence spectrophotometry, respectively. The XRD results showed that the main peak of the phosphor powders occurs at (101) plane. As for the photoluminescence properties, the excitation spectra showed the broad band centered at 306 nm and the emission intensity of the spectra peaked at 543 nm indicated a significant decrease as the concentration of $Tb^{3+}$ ion is increased.

• Proceedings of the KIEE Conference
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1775-1777
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• 2005

In this paper, maximum output of three different temperature conditions of the photovoltaic modules have been tested and compared to obtain the optimum conditions for the maximum power operation. Temperatures of the cell and module have been set to $20^{\circ}C$, $25^{\circ}C$ and $30^{circ}C$ under the constant light intensity of 1kW/$m^2$. 125${\times}$125mm 36 single crystal solar cells having 80 [W] each have been serially connected in the module. From the results, maximum output deviation of 4.67% has been obtained under the ceil temperature of $20^{\circ}C$ and module temperature of $30^{\circ}C$ while minimum deviation of 0.41${\sim}$0.92% has been measured under the same temperatures of cell and module. Therefore it has been found that the temperature of both cell and module should be fixed to $25^{\circ}C$ to obtain stable data unless the temperature coefficient should be compensated for the testing sample.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제24권3호
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• pp.173-176
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• 2011

The characteristic changes in ZnO thin film according to H- and O- plasma treatments have been studied by Photoluminescence (PL) spectroscopy at room temperature. The red shift of UV peak by 20-30 meV in PL spectra after plasma treatments is identified, which indicates that there are changes in the binding energy of bound exciton and/or the movement of energy levels of lattice defects and impurities. The width of UV peak is decreased after plasma treatments, which is believed to be closely related to the crystal quality of ZnO film. The increase of UV peak intensity after H-plasma treatment is also observed, and this could mean that the radiative recombination is strengthened because the hydrogen atoms in the plasma diffuse into the film where they passivate and neutralize the defects and the impurities.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.119-119
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• 2010

We report strong exciton transition and exciton-phonon couplings in photoluminescence (PL) of ZnO thin films grown on MgO/sapphire (buffer/substrate) by plasma-assisted molecular beam epitaxy. The PL spectra at 10 K showed the intensity of the dominant emission, donor-bound exciton transition of front surface (top surface, the latter part in growth) is found to be about 100 times higher than that of back surface (in-depth bottom area, the initial part), while the room temperature PL spectra showed dominant contributions from the free exciton emissions and phonon-replicas of free excitons for front surface and back surface, respectively, It could be attributed to the strong contributions of exciton-phonon coupling. Time resolved PL spectra reveal that the life time of exciton recombination from the front surface are longer than those from back surface. This is most probably due to the fact that reduction of non-radiative recombination in the front surface. This investigation indicates that the existence of native defects or trap centers which can be reduced by the proper initial condition in growth and the exciton-phonon interaction couplings play an important role in optical properties and crystal quality of ZnO thin films.

• Korean Journal of Materials Research
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• 제16권10호
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• pp.624-628
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• 2006

In this study, divalent europium-activated $NaCaPO_4$ green phosphor powders were prepared by the chemical synthetic method followed by heat treatment in reduced atmosphere, and the crystal structures, morphologies and photoluminescent properties of the powders were investigated by x-ray powder diffraction, scanning electron microscope and spectrometer for the first time. The effects of Ca/P and Na/Ca mole ratios on the final products were also investigated. The influences of input amount change of europium as the activator on the light emission intensity were studied, and the resulting concentration quenching phenomenon was observed. The optimized synthesis conditions obtained in this study were Ca/P mole ratio 1.2, Na/Ca mole ratio 3.0 and 4 mole%Eu. The peak wavelength was 505 nm for all the samples. The result of excitation spectrum measurement indicated that the excitation efficiency was high for the long-wavelength UV region. It was thus concluded that the samples prepared in this study can be successfully applied for the light-emitting devices such as LED excited with long-wavelength UV light sources.

• Bulletin of the Korean Chemical Society
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• 제15권12호
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• pp.1108-1112
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• 1994

25-Acetoxy-26,27,28-trimethoxycalix[4]arene was synthesized by the treatment of calix[4]arene trimethyl ether with acetyl chloride in the presence of NaH. The solution conformation was inferred as a partial cone conformation based on the $^1H$-and $^{13}C$ NMR spectra. The crystal structure has been determined by X-ray diffraction method. The crystals are monoclinic, space group $P2_1$/n, a=8.186 (1), b=17.137 (2), c=19.878 (3) ${\AA}$, ${\beta}$=95.67 (1)$^{\circ}$, Z=4, V=2774.90 ${\AA}^3$, $D_c$= 1.22 g $cm^{-3}$, $D_m$=1.23 g $cm^{-3}$. The intensity data were collected on an Enraf-Noninus CAD-4 Diffractometer with a graphite monochromated $Cu-K{\alpha}$ radiation. The structure was solved by direct method and refined by full-matrix least-squares methods to a final R value of 0.054 for 3675 observed reflections. The molecule possesses a partial cone conformation with one flattened phenyl unit, in which one anisol ring, distal to the ester ring, is inverted. The acetoxyphenyl ring is flattened.