• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.541-550
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• 1992

The fourth harmonic conversion(FHC) efficiency of high-power Nd laser pulse with wavelength of 1.054x10S0-6Tm using two KDP crystals(doubler adn quadrupler) was simulated numerically. Simulation results show that for the perfect phase-matching condition the FHC efficiency were 60-70% for several hundreds MW/cmS02T class and over 70% for GW/cmS02T class laser pulses. And the overall characteristics of FHC were discussed in terms of effects of input intensity, crystal length, and mismatch angle Δ$\theta$. Optimum method to FHC was type-II doubler & type-I quadrupler KDP crystal because type-II KDP doubler crystal has wide tolerance of acceptance matching-angle.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.406-417
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• 1997

A numerical study was conducted on the optimum magnetic field intensity and asymmetric factor for uniform axial oxygen concentration in 8 inch silicon single crystal growing process by magnetic Czochralski method. For constant shape of cusp field, a change of coil and crucible position were compared. In case of symmetric cusp field, magnetic field intensity variation shows concave downward with crystal growing for uniform, axial oxygen concentration. A numerical results show similar value of standard deviation of average oxygen concentration for uniform oxygen concentration between coil and crucible position change. In case of asymmetric cusp field. asymmetric factor is increased with crystal growing to have uniform oxygen concentration.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.155-159
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• 1997

We investigated the effect of mechanical backside damage in Czochralski silicon wafer. The intensity of mechanical damage were evaluated by minority carrier recombination lifetime by a laser excitation/microwave reflection photoconductance decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photoacoustic displacement values are also increased proportionally.

• Korean Journal of Crystallography
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• v.4 no.1
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• pp.49-51
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• 1993

The knowledge on the number of necessary and collectable reflections for the crystal structure analysis is greatly helpful in choosing the conditions for X-ray intensity data collection using automatic four circle diffractometer. In this paper, we represent a method to calculate the total unmber of collectable intensity date in an asymmetric unit.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.140-145
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• 2008

Silicon single crystals are grown by Czochralski (CZ) method in different growing conditions. The different shapes of the crystal-melt interface are obtained with various magnetic fields. Effects of zero-Gauss plane (ZGP) shape and magnetic intensity (MI) on the crystal-melt interface in the crystal experimentally are investigated. The shape of ZGP is not only flat but also parabolic, which is due to magnetic ratio (MR) of the lower to upper current densities in the configurations of the cusp-magnetic fields. As the MR increases, the crystal-melt interface becomes more concave. It means that the hot melt can be easily transported to the crystal-melt interface with increasing the MR. Effective shape of the crystal-melt interface is found to depend on the magnetic field in cusp-magnetic CZ method. The experimental results are compared with other studies and discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.27-40
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• 1997

The heat in Czochralski method is transfered by all transport mechanisms such as convection, conduction and radiation and convection is caused by the temperature difference in the molden pool, the rotations of crystal or crucible and the difference of surface tension. This study delvelops the simulation model of Czochralski growth by using the finite difference method with fixed grids combined with new latent heat treatment model. The radiative heat transfer occured in the surfce of the system is treated by calculating the view factors among surface elements. The model shows that the flow is turbulent, therefore, turbulent modeling must be used to simulate the transport phenomena in the real system applied to 8" Si single crystal growth process. The effects of a cusp magnetic field imposed on the Czochralski silicon melt are studied by numerical analysis. The cusp magnetic field reduces the natural and forced convection due to the rotation of crystal and crucible very effectively. It is shown that the oxygen concentration distribution on the melt/crystal interface is sensitively controlled by the change of the magnetic field intensity. This provides an interesting way to tune the desired O concentration in the crystal during the crystal growing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.555-562
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• 1998

Under the influence of non-uniform magnetic field, melt flow in steady state and oxygen concentration in unsteady state are numerically investigated. The strength of the applied characteristic magnetic fields are B=0.1T, 0.2T, and 0.3T, respectively. The buoyancy effects due to the crucible wall heating and the thermocapillary effects due to the surface tention at the free surface are suppressed differentially by the non-uniform magnetic fields. As the intensity of characteristic magnetic fields is increasing, the recirculation region in the meridional plane is moving toward the growing crystal, and is diminishing. The oxygen concentration on the growing surface of crystals is decreasing and the uniformity of the oxygen concentration is increasing as the intensity of the magnetic fields is increasing.

• Current Optics and Photonics
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• v.2 no.1
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• pp.85-89
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• 2018

This paper presents a new, efficient hybrid photonic-plasmonic structure. The proposed structure efficiently and with very high accuracy combines the resonant mode of a low-mode-volume photonic-crystal nanocavity with a bowtie nanoantenna's plasmonic resonance. The resulting enormous enhancement of light intensity of about $1.1{\times}10^7$ in the gap region of the bowtie nanoantenna, due to the effective optical-resonance combination, is realized by subtle optimization of the nanocavity's optical characteristics. This coupled structure holds great promise for many applications relying on strong confinement and enhancement of optical field in nanoscale volumes, including antennas (communication and information), optical trapping and manipulation, sensors, data storage, nonlinear optics, and lasers.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.93-95
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• 2015

We present an optical detection method for the fundamental vibrational mode of a tuning fork crystal oscillator in air. A focused He/Ne laser beam is directed onto the edge of one vibrating tine of the tuning fork; its vibrating motion chops the incoming laser beam and modulates the intensity. The beam with modulated intensity is then detected and converted to an electrical signal by a high-speed photo-detector. This electrical signal is a sinusoid at the resonant frequency of the tuning fork vibration, which is 32.76 kHz. Our scheme is robust enough that the sinusoidal signal is detectable at up to $40^{\circ}$ of rotation of the tuning fork.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.93-97
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• 2003

The crystallization behavior of amorphous silicon is affected by direction and intensity of electric field in FALC（Field-Aided Lateral Crystallization). Electric field was calculated in a simplified model using conductivity data of Mo, a-Si, $SiO_2$and boundary conditions for electric potential at the electrodes. The magnitude of electric field intensity in each corner of cathode was much larger than that in the center of patterns, and the electric field direction was 50~60 degree outside to cathode. And electric field intensity at a relatively small pattern was larger than that of a large pattern.